Patents by Inventor Shinji Nakamura

Shinji Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10482941
    Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: November 19, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Takuya Shimada, Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Michael Arnaud Quinsat, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Miyano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
  • Publication number: 20190331747
    Abstract: A sample pipe is provided in a sample temperature control pipe. A detection coil is provided in a low-temperature airtight chamber and configured to irradiate a sample with a high-frequency magnetic field. A room-temperature shield is provided on an outer circumferential surface of the sample temperature control pipe or on an inner circumferential surface thereof, and is configured to block irradiation of the high-frequency magnetic field from the detection coil from reaching a region other than an observation object. A low-temperature shield is provided in an airtight chamber and between the detection coil and the room-temperature shield and is configured to block irradiation of the high-frequency magnetic field from the detection coil from reaching the room-temperature shield.
    Type: Application
    Filed: April 24, 2019
    Publication date: October 31, 2019
    Inventors: Katsuyuki Toshima, Shigenori Tsuji, Shinji Nakamura, Fumio Hobo, Takeshi Tsukada, Akifumi Nomura
  • Patent number: 10457510
    Abstract: A recording apparatus includes a return member switchable between a first orientation in which a portion of the return member overlaps a feed roller in a side view of a medium feeding path and a second orientation in which the return member is turned toward a downstream side in a medium feeding direction and does not overlap the feed roller. The return member changes an orientation thereof from the second orientation to the first orientation, thereby returning a medium to an upstream side in the medium feeding direction. When a transport roller disposed downstream of the feed roller is driven in reverse to return the medium to the upstream side and position the medium at a recording start position, the return member takes a third orientation in which the return member is raised toward the upstream side further than in the first orientation.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: October 29, 2019
    Assignee: Seiko Epson Corporation
    Inventors: Shinji Kanemaru, Kazuhisa Nakamura, Tatsuya Shirane
  • Publication number: 20190324099
    Abstract: A rotor contains a sample. A turbine cap is fitted into an opening of one end of the rotor, and a bottom cap is fitted into an opening of the other end of the rotor. A recess portion is formed in the turbine cap, and a recess portion is formed in the bottom cap. Insert members having a negative linear expansion coefficient are disposed in the recess portions.
    Type: Application
    Filed: March 26, 2019
    Publication date: October 24, 2019
    Inventors: Toshimichi Fujiwara, Yoh Matsuki, Yuki Endo, Takahiro Nemoto, Shinji Nakamura
  • Publication number: 20190314367
    Abstract: The present invention relates to a prophylactic and/or therapeutic agent for behavioral and psychological symptoms associated with neurodegenerative disease or impulsive symptoms associated with mental disease, which contains 7-[4-(4-benzo[b]thiophen-4-yl-piperazin-1-yl)butoxy]-1H-quinolin-2-one or a salt thereof as an active ingredient.
    Type: Application
    Filed: June 28, 2019
    Publication date: October 17, 2019
    Applicant: OTSUKA PHARMACEUTICAL CO., LTD.
    Inventors: Shinji SATO, Kenji MAEDA, Dai ISHIKAWA, Mai NAKAMURA
  • Patent number: 10446249
    Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: October 15, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Michael Arnaud Quinsat, Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Takuya Shimada, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Miyano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
  • Patent number: 10446212
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: October 15, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Susumu Hashimoto, Yasuaki Ootera, Tsuyoshi Kondo, Takuya Shimada, Michael Arnaud Quinsat, Masaki Kado, Nobuyuki Umetsu, Shiho Nakamura, Tomoya Sanuki, Yoshihiro Ueda, Shinji Miyano, Hideaki Aochi, Yasuhito Yoshimizu, Yuichi Ito
  • Publication number: 20190300536
    Abstract: The present invention provides a heterocyclic compound having an antagonistic action on an NMDA receptor containing the NR2B subunit, and expected to be useful as an agent for the prophylaxis or treatment of major depression, bipolar disorder, migraine, pain, behavioral and psychological symptoms of dementia and the like. The present invention relates to a compound represented by the formula (I): wherein each symbol is as described in the description, or a salt thereof.
    Type: Application
    Filed: March 27, 2019
    Publication date: October 3, 2019
    Applicant: Takeda Pharmaceutical Company Limited
    Inventors: Yuya OGURO, Shigemitsu MATSUMOTO, Takeshi WAKABAYASHI, Norihito TOKUNAGA, Taku KAMEI, Mitsuhiro ITO, Satoshi MIKAMI, Masaki SETO, Shinji MORIMOTO, Shinji NAKAMURA, Sachie TAKASHIMA, Masataka MURAKAMI, Masaki DAINI, Makoto KAMATA, Minoru NAKAMURA, Yasufumi WADA, Hiroyuki KAKEI, Kazuaki TAKAMI, Taisuke TAWARAISHI, Jumpei AIDA, Kouichi IWANAGA, Satoshi YAMAMOTO
  • Publication number: 20190287637
    Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.
    Type: Application
    Filed: September 4, 2018
    Publication date: September 19, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Michael Arnaud Quinsat, Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Takuya Shimada, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Myano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
  • Publication number: 20190287598
    Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.
    Type: Application
    Filed: September 12, 2018
    Publication date: September 19, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Takuya SHIMADA, Yasuaki OOTERA, Tsuyoshi KONDO, Nobuyuki UMETSU, Michael Arnaud QUINSAT, Masaki KADO, Susumu HASHIMOTO, Shiho NAKAMURA, Hideaki AOCHI, Tomoya SANUKI, Shinji MIYANO, Yoshihiro UEDA, Yuichi ITO, Yasuhito YOSHIMIZU
  • Publication number: 20190288076
    Abstract: A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.
    Type: Application
    Filed: March 14, 2019
    Publication date: September 19, 2019
    Inventors: Ryoichi SAOTOME, Naoyuki UEDA, Yuichi ANDO, Yuki NAKAMURA, Yukiko ABE, Shinji MATSUMOTO, Yuji SONE, Sadanori ARAE, Minehide KUSAYANAGI
  • Publication number: 20190280098
    Abstract: A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.
    Type: Application
    Filed: May 29, 2019
    Publication date: September 12, 2019
    Inventors: Naoyuki UEDA, Yuki NAKAMURA, Yukiko ABE, Shinji MATSUMOTO, Yuji SONE, Ryoichi SAOTOME, Sadanori ARAE, Minehide KUSAYANAGI, Yuichi ANDO
  • Patent number: 10403381
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: September 3, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Michael Arnaud Quinsat, Takuya Shimada, Susumu Hashimoto, Nobuyuki Umetsu, Yasuaki Ootera, Masaki Kado, Tsuyoshi Kondo, Shiho Nakamura, Tomoya Sanuki, Yoshihiro Ueda, Yuichi Ito, Shinji Miyano, Hideaki Aochi, Yasuhito Yoshimizu
  • Patent number: 10403234
    Abstract: A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.
    Type: Grant
    Filed: May 23, 2018
    Date of Patent: September 3, 2019
    Assignee: RICOH COMPANY, LTD.
    Inventors: Ryoichi Saotome, Naoyuki Ueda, Yuki Nakamura, Yukiko Abe, Shinji Matsumoto, Yuji Sone, Sadanori Arae, Minehide Kusayanagi
  • Patent number: 10403765
    Abstract: A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: September 3, 2019
    Assignee: RICOH COMPANY, LTD.
    Inventors: Shinji Matsumoto, Naoyuki Ueda, Yuki Nakamura, Yukiko Abe, Yuji Sone, Ryoichi Saotome, Sadanori Arae, Minehide Kusayanagi
  • Publication number: 20190263832
    Abstract: Provided is a compound represented by the formula (I): wherein each symbol is as defined in the specification, or a salt thereof, which has an AMPA (?-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid) receptor potentiating action. The compound of the present invention is useful as a prophylactic or therapeutic drug for depression, schizophrenia, Alzheimer's disease or attention deficit hyperactivity disorder (ADHD) and the like.
    Type: Application
    Filed: January 24, 2019
    Publication date: August 29, 2019
    Inventors: Masakuni KORI, Toshihiro IMAEDA, Shinji NAKAMURA, Masashi TOYOFUKU, Eiji HONDA, Yasutomi ASANO, Osamu UJIKAWA, Michiyo MOCHIZUKI
  • Patent number: 10384170
    Abstract: A method of manufacturing a separation membrane structure comprising a step of forming a first to nth zeolite membranes on a surface of a porous substrate by “n” repetitions (wherein n is an integer greater than or equal to 2) of formation of a zeolite membrane by a method of hydrothermal synthesis. The following formula (1) is established in relation to the step of forming the first to the nth zeolite membranes. (Formula 1) N1/N0+0.1?T2˜n/T1?2N1/N0+2 (Wherein, N1 denotes a permeation rate of a predetermined gas in the substrate after formation of the first zeolite membrane, N0 denotes a permeation rate of a predetermined gas in the substrate before formation of the first zeolite membrane, T1 is a time required for formation of the first zeolite membrane, and T2˜n is a total time required for formation of the second to the nth zeolite membranes.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: August 20, 2019
    Assignee: NGK Insulators, Ltd.
    Inventors: Ryujiro Nagasaka, Shinji Nakamura
  • Patent number: 10378391
    Abstract: In a waste heat recovery device comprising a Rankine cycle in which working fluid circulates and a cooling circuit in which coolant water of an engine circulates, a heat source of a heater of the Rankine cycle is waste heat of the engine. A condenser of the Rankine cycle is configured to exchange heat between the working fluid and coolant water of a third coolant water circuit configured to circulate coolant water having passed through a radiator without passing through the engine.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: August 13, 2019
    Assignee: SANDEN HOLDINGS CORPORATION
    Inventors: Shinji Nakamura, Yasuaki Kano
  • Publication number: 20190245090
    Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.
    Type: Application
    Filed: July 14, 2017
    Publication date: August 8, 2019
    Inventors: Minehide KUSAYANAGI, Naoyuki UEDA, Yuki NAKAMURA, Yukiko ABE, Shinji MATSUMOTO, Yuji SONE, Ryoichi SAOTOME, Sadanori ARAE
  • Patent number: RE47726
    Abstract: An image forming apparatus includes a nip forming member and a transfer bias output device that outputs a transfer bias to form a transfer electric field in a transfer nip between the nip forming member and an intermediate transfer member. Upon transfer of a composite toner image including a particular toner image onto a recording medium in the transfer nip, the transfer bias output device outputs the transfer bias including a first superimposed bias in which a direct current (DC) component is superimposed on an alternating current (AC) component. Upon transfer of the composite toner image without the particular toner image onto the recording medium in the transfer nip, the transfer bias output device outputs one of the transfer bias including a second superimposed bias having a peak-to-peak value of the AC component smaller than that of the first superimposed bias and the transfer bias including only the DC component.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: November 12, 2019
    Assignee: RICOH COMPANY, LTD.
    Inventors: Shinji Aoki, Haruo Iimura, Yasuhiko Ogino, Tadashi Kasai, Naomi Sugimoto, Shinya Tanaka, Keigo Nakamura