Abstract: A light guide sheet includes a material sheet having a film shape, first and second illuminations portion provided on the material sheet for diffusing light. The material sheet has a slit having substantially a strip shape provided therein and provided around the first illumination portion. The slit has a first edge and a second edge opposite to the first edge. The first edge faces the first illumination portion. The material sheet includes a first bridge and a second bridge linking the first edge of the first slit to the second edge across the first slit. This light guide sheet provides a movable contact assembly which is easily fabricated and provides preferable illuminating.

Abstract: A light guide sheet includes a material sheet having a film shape, first and second illuminations portion provided on the material sheet for diffusing light. The material sheet has a slit having substantially a strip shape provided therein and provided around the first illumination portion. The slit has a first edge and a second edge opposite to the first edge. The first edge faces the first illumination portion. The material sheet includes a first bridge and a second bridge linking the first edge of the first slit to the second edge across the first slit. This light guide sheet provides a movable contact assembly which is easily fabricated and provides preferable illuminating.

Abstract: An EER high frequency amplifier wherein the dynamic range of the gain can be widened by performing a predetermined control of a device in a high frequency amplifying part and thereby enhancing the isolation within the device. In an EER high frequency amplifier (1), an envelope detecting part (2) extracts an amplitude signal from an input high frequency signal, while a limiter (3) extracts a phase signal therefrom. A baseband amplifying part (4) generates a voltage in accordance with the amplitude signal and supplies it as the drain voltage of a GaAs FET (5a) of a high frequency amplifying part (5). When the drain voltage is below a predetermined first reference voltage, a gate voltage control part (6) holds an initially established gate voltage. When the drain voltage exceeds the first reference voltage, the gate voltage control part (6) so controls the gate voltage as to be proportional to the drain voltage.

Abstract: An EER high frequency amplifier wherein the dynamic range of the gain can be widened by performing a predetermined control of a device in a high frequency amplifying part and thereby enhancing the isolation within the device. In an EER high frequency amplifier (1), an envelope detecting part (2) extracts an amplitude signal from an input high frequency signal, while a limiter (3) extracts a phase signal therefrom. A baseband amplifying part (4) generates a voltage in accordance with the amplitude signal and supplies it as the drain voltage of a GaAs FET (5a) of a high frequency amplifying part (5). When the drain voltage is below a predetermined first reference voltage, a gate voltage control part (6) holds an initially established gate voltage. When the drain voltage exceeds the first reference voltage, the gate voltage control part (6) so controls the gate voltage as to be proportional to the drain voltage.