Patents by Inventor Shinji Sugahara

Shinji Sugahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate processing apparatus and operation method of substrate processing apparatus
    Patent number: 11043399
    Abstract: A plasma processing apparatus includes a storage; processors; a liquid supply which supplies, into the storage, at least a first liquid composed of a processing liquid or source liquids for composing the processing liquid; a detector which detects a value of a parameter indicating a state of the first liquid supplied into the storage or a state of the processing liquid in the storage; and a controller which controls the processors to perform a liquid processing in sequence. The controller determines, based on a detection result of the value of the parameter, whether it is possible to supply the processing liquid continuously into a preset number of processors concurrently under a condition requested by the processors, and, if not, the controller performs a simultaneous processing restricting control of reducing a number of processors which are supposed to perform the liquid processing concurrently to be lower than the preset number.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: June 22, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tomiyasu Maezono, Sadamichi Mori, Kouji Takuma, Chikara Nobukuni, Keigo Satake, Shinji Sugahara, Masahiro Yoshida
  • SUBSTRATE PROCESSING APPARATUS AND OPERATION METHOD OF SUBSTRATE PROCESSING APPARATUS
    Publication number: 20200211867
    Abstract: A plasma processing apparatus includes a storage; processors; a liquid supply which supplies, into the storage, at least a first liquid composed of a processing liquid or source liquids for composing the processing liquid; a detector which detects a value of a parameter indicating a state of the first liquid supplied into the storage or a state of the processing liquid in the storage; and a controller which controls the processors to perform a liquid processing in sequence. The controller determines, based on a detection result of the value of the parameter, whether it is possible to supply the processing liquid continuously into a preset number of processors concurrently under a condition requested by the processors, and, if not, the controller performs a simultaneous processing restricting control of reducing a number of processors which are supposed to perform the liquid processing concurrently to be lower than the preset number.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 2, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Tomiyasu Maezono, Sadamichi Mori, Kouji Takuma, Chikara Nobukuni, Keigo Satake, Shinji Sugahara, Masahiro Yoshida
  • Method for forming isolation structure
    Patent number: 8969172
    Abstract: [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: March 3, 2015
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Naoko Nakamoto, Katsuchika Suzuki, Shinji Sugahara, Tatsuro Nagahara
  • METHOD FOR FORMING ISOLATION STRUCTURE
    Publication number: 20130214383
    Abstract: [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
    Type: Application
    Filed: November 2, 2011
    Publication date: August 22, 2013
    Applicant: AZ ELECTRONIC MATERIALS USA CORP.
    Inventors: Naoko Nakamoto, Katsuchika Suzuki, Shinji Sugahara, Tatsuro Nagahara