Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.

Abstract: A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.

Abstract: A deposition film forming apparatus has a reaction vessel the inside of which can be evacuated. In the reaction vessel, a gas supplying unit for supplying a raw material gas is arranged, and a plurality of cylindrical substrates are arranged at equal intervals on a common circumference. A high-frequency electric power introducing unit is arranged outside the reaction vessel. A deposition film is formed on the cylindrical substrates by exciting and dissociating the raw material gas by means of high-frequency electric power. The deposition film forming apparatus has a grounded and conductive cylindrical member placed in an area surrounded by the cylindrical substrates arranged on the common circumference.

Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.

Abstract: An object of the present invention is to surely store a desired image having a desired length regardless of capacity of a memory capable of storing a newly inputted image. To this end, in the present invention, in response to recording instruction, by sending a photo-taken moving image to another apparatus connected through a communication circuit and by storing the moving image in a memory means of the another apparatus, an apparatus for photo-taking the moving image does not require large memory capacity, so that a large amount data such as the moving image can be stored positively.

Abstract: In a plasma processing method for processing an object which is placed in a reactor container, by decomposing a raw material gas in the reactor container using a high frequency power outputted from a high power supply and introduced into the reactor container via a matching device and an electrode, the adjustment of impedance by the matching device during plasma processing is controlled within a predetermined impedance variable range, and the impedance variable range is changed as plasma processing proceeds. Another plasma processing method employing a plurality of power supply systems having high frequency power supplies and matching devices capable of changing impedances and controlling the adjustment of impedance by at least one of the matching devices during plasma processing within a predetermined impedance variable range.

Abstract: A process for producing an electrophotographic light-receiving member having a conductive support and a light-receiving member having a photoconductive layer formed on the surface of the conductive support and composed of a non-single crystal material containing silicon atoms as a main component, hydrogen atoms and/or halogen atoms. The photoconductive layer is formed at a flow rate (X) sccm of n Si supply gas and a discharge space volume (Z) cm3 satisfying (A) and a flow rate (X) sccm of the Si supply gas and density (Y) W/cm3 of the electric power input to the discharge space satisfying the following relation (B) wherein 3×10−3≦X/Z≦1×10−2  (A) and 3×10−4≦Y/X≦7×10−4  (B).

Abstract: A process for producing an electrophotographic light-receiving member having a conductive support and a light-receiving member having a photoconductive layer formed on the surface of the conductive support and composed of a non-single crystal material containing silicon atoms as a main component, hydrogen atoms and/or halogen atoms.

Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy the required relationship. Also, disclosed are a semiconductor device manufacturing method, a semiconductor device and a vacuum processing apparatus.

Abstract: An object of the present invention is to surely store a desired image having a desired length regardless of capacity of a memory capable of storing a newly inputted image.

Abstract: An electrophotographic light-receiving member comprising a conductive support and provided thereon a photoconductive layer formed of a non-single-crystal material mainly composed of silicon atom and containing hydrogen atom and an element belonging to Group IIIb of the periodic table; wherein the photoconductive layer has hydrogen atom content, an optical band gap and a characteristic energy obtained from the exponential tail of light absorption spectra, all in specific ranges, and has on the surface side thereof a second layer region that absorbs a prescribed amount of light incident on the photoconductive layer and on the support side thereof the other first layer region; the element belonging to Group IIIb of the periodic table being contained in the second layer region in an amount made smaller than that in the first layer region.

Abstract: An electrophotographic light-receiving member has a conductive support and a light-receiving member having a photoconductive layer formed on the surface of the conductive support and composed of a non-single crystal material containing silicon atoms as a main component, hydrogen atoms and/or halogen atoms. The non-single crystal material which constitutes the photoconductive layer has an optical band gap of 1.8 eV to 1.85 eV, and the characteristic energy of an exponential tail obtained from a light absorption spectrum of the non-single crystal material is 50 meV to 55 meV. The electrophotographic light-receiving member is simultaneously improved in its charge performance, environmental stability and exposure memory, and has excellent potential characteristics and image properties.

Abstract: An electrophotographic light-receiving member comprising a conductive support and provided thereon a photoconductive layer formed of a non-single-crystal material mainly composed of silicon atom and containing hydrogen atom and an element belonging to Group IIIb of the periodic table; wherein the photoconductive layer has hydrogen atom content, an optical band gap and a characteristic energy obtained from the exponential tail of light absorption spectra, all in specific ranges, and has on the surface side thereof a second layer region that absorbs a prescribed amount of light incident on the photoconductive layer and on the support side thereof the other first layer region; the element belonging to Group IIIb of the periodic table being contained in the second layer region in an amount made smaller than that in the first layer region.

Abstract: An electrophotographic light-receiving member has a conductive support and a photoconductive layer composed of a non-monocrystalline material comprising silicon atoms as a matrix, hydrogen and/or halogen atoms, and an element belonging to Group IIIb of the periodic table. The photoconductive layer has from the surface side toward the conductive support side, a third layer region that absorbs 50-90% of incident image exposure light and a second layer region that absorbs 60-90% of pre-exposure light incident on the photoconductive layer. The Group IIIb element is present such that its content decreases from the conductive support side to the surface side. In three embodiments the photoconductive layer has, respectively: 10-30 at. % H; 10-20 at. % H and 25-40 at % H; an optical band gap of 1.75-1.85 eV, 1.65-1.75 eV and 1.80-1.90 eV and a characteristic energy of each of 50-55 meV.

Abstract: In a reactor capable of reducing an internal pressure thereof, a non-single-crystalline material layer containing at least one kind of carbon atoms, hydrogen atoms or nitrogen atoms is formed and etched on a non-single-crystalline photoconductive layer mainly composed of silicon atoms, formed on a substrate, under application of a high-frequency power of 50 MHz to 450 MHz, and the formation and the etching are alternately repeated plural times to form a surface layer. A light-receiving member having such a surface layer does not damage cleaning performance over a long period of time, hardly allows adhesion of corona discharge products, and can be free from faint images, smeared images and uneven image density even if no heating means for the drum is provided.

Abstract: An electrophotographic light-receiving member is disclosed which comprises a conductive support; and a light-receiving layer provided on the conductive support and having a photoconductive layer composed of a non-monocrystalline material comprising silicon atoms as a matrix, hydrogen and/or halogen atoms, and an element belonging to Group IIIb of the periodic table, wherein the photoconductive layer has from the surface side toward the conductive support side, a third layer region that absorbs a specified range of amount of image exposure light incident on the photoconductive layer, a second layer region that is other than the third layer region of a layer region that absorbs a specified range of amount of pre-exposure light incident on the photoconductive layer, and a first layer region that is other than the third and the second layer regions of the photoconductive layer, and wherein the element belonging to Group IIIb of the periodic table is contained in the photoconductive layer such that the content of

Abstract: A wireless communication apparatus automatically disconnects a communication channel between a master device and a slave device when a received electric field intensity becomes lower than a predetermined level, thereby preventing unnecessarily prolonged communication when the field intensity is excessively low. The received field intensity is detected and if in the course of communication, the reception field intensity becomes lower than a reference level a request for confirmation of the communication status is transmitted to the slave device. In accordance with the response from the slave device to the request for confirmation, the wireless channel may be disconnected.

Abstract: In a reactor capable of reducing an internal pressure thereof, a non-single-crystalline material layer containing at least one kind of carbon atoms, hydrogen atoms or nitrogen atoms is formed and etched on a non-single-crystalline photoconductive layer mainly composed of silicon atoms, formed on a substrate, under application of a high-frequency power of 50 MHz to 450 MHz, and the formation and the etching are alternately repeated plural times to form a surface layer.A light-receiving member having such a surface layer does not damage cleaning performance over a long period of time, hardly allows adhesion of corona discharge products, and can be free from faint images, smeared images and uneven image density even if no heating means for the drum is provided.

Abstract: In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode serving also as a film forming substrate and a second electrode provided so as to surround the first electrode, the high-frequency power is supplied from its power source to the second electrode at two points at least. In plasma processing apparatuses as typified by plasma CVD apparatuses to which the high-frequency power of a frequency from 20 MHz to 450 MHz is supplied, this method and apparatus can effectively decrease unevenness in plasma processing in the peripheral direction of the film formed, can promise a high plasma processing rate and can improve the characteristics of a deposited film during deposited film formation.

Abstract: For providing a light receiving member for electrophotography improved in chargeability, temperature characteristic of sensitivity, and optical memory characteristic and presenting excellent quality of image, the light receiving member for electrophotography comprises an electrically conductive substrate and a photoconductive layer of a non-monocrystal material containing hydrogen atoms in the matrix of silicon atoms, wherein the photoconductive layer has regions formed under such conditions as to obtain a first layer region and a second layer region both having characteristic energy (Eu) of not more than 55 meV obtained from a linear portion (an exponential tail) of a function expressed by Equation (I) defined below with photon energy (h.nu.) as an independent variable and absorption coefficient (.alpha.) of photoabsorption spectrum as a dependent variable:ln.alpha.=(1/Eu).multidot.h.nu.+.alpha..sub.