Patents by Inventor Shinji Yashima
Shinji Yashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230067800Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including checking a leak from a process furnace before a substrate is processed. The checking includes: (a) measuring, by a partial pressure sensor provided at an exhaust pipe, an oxygen partial pressure value of a residual oxygen after the process furnace is vacuum-exhausted; (b) comparing the oxygen partial pressure value measured by the partial pressure sensor with a threshold value; and (c) when the oxygen partial pressure value is higher than the threshold value in (b), performing at least one among: purging the process furnace and evacuating the process furnace.Type: ApplicationFiled: November 7, 2022Publication date: March 2, 2023Inventors: Akinori TANAKA, Shinji YASHIMA, Masahiro MIYAKE
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Patent number: 11519815Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including checking a leak from a process furnace before a substrate is processed. The checking includes: (a) measuring, by a partial pressure sensor provided at an exhaust pipe, an oxygen partial pressure value of a residual oxygen after the process furnace is vacuum-exhausted; (b) comparing the oxygen partial pressure value measured by the partial pressure sensor with a threshold value; and (c) when the oxygen partial pressure value is higher than the threshold value in (b), performing at least one among: purging the process furnace and evacuating the process furnace.Type: GrantFiled: February 19, 2021Date of Patent: December 6, 2022Assignee: Kokusai Electric CorporationInventors: Akinori Tanaka, Shinji Yashima, Masahiro Miyake
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Publication number: 20210172825Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including checking a leak from a process furnace before a substrate is processed. The checking includes: (a) measuring, by a partial pressure sensor provided at an exhaust pipe, an oxygen partial pressure value of a residual oxygen after the process furnace is vacuum-exhausted; (b) comparing the oxygen partial pressure value measured by the partial pressure sensor with a threshold value; and (c) when the oxygen partial pressure value is higher than the threshold value in (b), performing at least one among: purging the process furnace and evacuating the process furnace.Type: ApplicationFiled: February 19, 2021Publication date: June 10, 2021Inventors: Akinori TANAKA, Shinji YASHIMA, Masahiro MIYAKE
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Patent number: 9171724Abstract: A substrate processing apparatus includes a process chamber which processes a substrate, a conductive substrate support table which is installed within the process chamber, a dielectric plate on which the substrate is mounted, the dielectric plate being placed on the substrate support table, a microwave generator which is installed outside the process chamber, and a microwave supplying unit which supplies a microwave generated by the microwave generator into the process chamber.Type: GrantFiled: September 14, 2012Date of Patent: October 27, 2015Assignee: HITACHI KOKUSAIELECTRIC INC.Inventors: Shinji Yashima, Atsushi Umekawa
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Patent number: 8987645Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.Type: GrantFiled: September 22, 2011Date of Patent: March 24, 2015Assignee: Hitachi Kokusai Electric Inc.Inventors: Unryu Ogawa, Masahisa Okuno, Tokunobu Akao, Shinji Yashima, Atsushi Umekawa, Kaichiro Minami
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Patent number: 8557720Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.Type: GrantFiled: September 23, 2011Date of Patent: October 15, 2013Assignee: Hitachi Kokusai Electric, Inc.Inventors: Tokunobu Akao, Unryu Ogawa, Masahisa Okuno, Shinji Yashima, Atsushi Umekawa, Kaichiro Minami
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Patent number: 8486222Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.Type: GrantFiled: September 22, 2011Date of Patent: July 16, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Tokunobu Akao, Unryu Ogawa, Masahisa Okuno, Shinji Yashima, Atsushi Umekawa, Kaichiro Minami
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Patent number: 8471477Abstract: A processing speed may be easily controlled over the wide range within the impedance variation range.Type: GrantFiled: March 24, 2011Date of Patent: June 25, 2013Assignee: Hitachi Kokusai Electric, Inc.Inventors: Masayuki Tomita, Katsunori Funaki, Shinji Yashima, Ryuichi Shimada
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Publication number: 20130072034Abstract: A substrate processing apparatus includes a process chamber which processes a substrate, a conductive substrate support table which is installed within the process chamber, a dielectric plate on which the substrate is mounted, the dielectric plate being placed on the substrate support table, a microwave generator which is installed outside the process chamber, and a microwave supplying unit which supplies a microwave generated by the microwave generator into the process chamber.Type: ApplicationFiled: September 14, 2012Publication date: March 21, 2013Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Shinji YASHIMA, Atsushi UMEKAWA
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Publication number: 20120129358Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.Type: ApplicationFiled: September 22, 2011Publication date: May 24, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Unryu OGAWA, Masahisa OKUNO, Tokunobu AKAO, Shinji YASHIMA, Atsushi UMEKAWA, Kaichiro MINAMI
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Publication number: 20120108080Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.Type: ApplicationFiled: September 22, 2011Publication date: May 3, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tokunobu AKAO, Unryu OGAWA, Masahisa OKUNO, Shinji YASHIMA, Atsushi UMEKAWA, Kaichiro MINAMI
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Publication number: 20120108061Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.Type: ApplicationFiled: September 23, 2011Publication date: May 3, 2012Applicant: HITACHI KOKUSAI ELECTRIC, INCInventors: Tokunobu AKAO, Unryu OGAWA, Masahisa OKUNO, Shinji YASHIMA, Atsushi UMEKAWA, Kaichiro MINAMI
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Publication number: 20110234100Abstract: A processing speed may be easily controlled over the wide range within the impedance variation range.Type: ApplicationFiled: March 24, 2011Publication date: September 29, 2011Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Masayuki TOMITA, Katsunori FUNAKI, Shinji YASHIMA, Ryuichi SHIMADA
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Publication number: 20090255630Abstract: Disclosed is a substrate processing apparatus, including: a reaction chamber to process a substrate; a substrate placing member to stack a plurality of substrates thereon in multi-layers at a predetermined distance from one another in the reaction chamber; an introducing section to introduce processing gas into the reaction chamber; an exhaust section to exhaust an inside of the reaction chamber; and a plurality of pairs of comb electrodes, to which alternating current electric power is to be applied, to generate plasma, the plurality of pairs of comb electrodes being disposed in the reaction chamber, wherein each pair of the plurality of pairs of comb electrodes are disposed at a predetermined distance from each of plasma processing faces of the plurality of the substrates to be placed on the substrate placing member.Type: ApplicationFiled: April 26, 2006Publication date: October 15, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuyuki Toyoda, Shinji Yashima, Yuji Takebayashi, Takeshi Itoh
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Patent number: 7045447Abstract: A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.Type: GrantFiled: March 26, 2003Date of Patent: May 16, 2006Assignee: Hitachi Kokusai Electric Inc.Inventors: Unryu Ogawa, Naoya Yamakado, Tadashi Terasaki, Shinji Yashima
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Publication number: 20030224616Abstract: A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.Type: ApplicationFiled: March 26, 2003Publication date: December 4, 2003Inventors: Unryu Ogawa, Naoya Yamakado, Tadashi Terasaki, Shinji Yashima
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Publication number: 20030219989Abstract: A producing method of a semiconductor device uses a plasma processing apparatus including a processing chamber, a substrate supporting body which is to support a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming device which are disposed around the processing chamber. The producing method comprises supplying gas including oxygen element into the processing chamber, and plasma-discharging the gas including oxygen element by a high frequency electric field obtained by supplying a high frequency electric power to the cylindrical electrode and a magnetic field obtained by the magnetic lines of force-forming device to oxidize an object to form an oxide film having a thickness of 30 to 60 Å.Type: ApplicationFiled: April 3, 2003Publication date: November 27, 2003Inventors: Tadashi Terasaki, Shinji Yashima