Abstract: Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.

Abstract: Provided is a heater including: a substrate that has electrical conductivity; a first insulation portion that is provided on a first surface of the substrate, has an insulation property; at least one heat generation body that is provided on the first insulation portion; a second insulation portion that is provided on a second surface of the substrate which is opposite to the first surface, has an insulation property; at least one detection unit that is provided on at least one of the first insulation portion and the second insulation portion; and a first wiring which is provided on at least one of the first insulation portion and the second insulation portion, and in which one end is electrically connected to one terminal of the detection unit and the other end is electrically connected to the substrate having the electrical conductivity.

Abstract: Provided is a semiconductor device. The semiconductor device includes a first circuit that includes a plurality of fixed resistance elements connected in series; a second circuit that includes a plurality of variable resistance elements connected in series and that is connected in series to the first circuit; a first cover portion that is provided on an upper layer side of the first circuit and that covers the first circuit; and a second cover portion that is provided on an upper layer side of the second circuit and that covers the second circuit. The first cover portion included two or more first metal films electrically connected, correspondingly, to units having any number of the fixed resistance elements, and the second cover portion includes a second metal film electrically connected to the plurality of the variable resistance elements.

Abstract: A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged at least partially on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal or metallic film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.

Abstract: Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.

Abstract: A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.

Abstract: A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

Abstract: A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

Abstract: A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

Abstract: A semiconductor device includes a substrate; a laminate which is formed on one main surface side of the substrate, and includes an aluminum alloy wiring and an insulating film surrounding the aluminum alloy wiring; and a silicon nitride film covering the laminate, in which the silicon nitride film and the insulating film have an opening portion, through which the silicon nitride film and the insulating film, formed at a position overlapped with a bonding portion of the aluminum alloy wiring, and a deposition made of a residue caused by reverse sputtering, which contains silicon and nitrogen, adheres to a portion exposed from the opening portion of a surface of the aluminum alloy wiring, to form a film.

Abstract: A speaker diaphragm includes a protruding dome portion formed at a center portion of the speaker diaphragm, and an annular cone portion extending from an outer peripheral edge of the dome portion in a direction inclined with respect to a protrusion direction of the dome portion. The dome portion and the cone portion are, in a seamless manner, integrally formed of a sheet material made of magnesium or magnesium alloy, and an outer peripheral end of the cone portion at least extends to a substantially identical height position to a maximum protrusion position of the dome portion. An annular step portion for attachment of a cylindrical voice coil bobbin is provided along a boundary portion between the dome portion and the cone portion.

Abstract: A semiconductor device (10) includes: a substrate (1); a wiring (6) formed above the substrate (1); a titanium nitride film (7) formed on the wiring (6); an oxide film (3) formed on the titanium nitride film (7); a silicon nitride film (4) formed on the oxide film (3); and a pad portion (8) exposing the wiring (6), and formed at a place where a first opening portion (91) formed in the silicon nitride film (4) and a second opening portion (92) formed in the titanium nitride film (7) overlap with each other in plan view, and being inside a third opening portion (93) formed in the oxide film (3) in plan view, wherein the silicon nitride film (4) is formed on top of and in contact with the titanium nitride film (7) inside the third opening portion (93) in plan view.

Abstract: A semiconductor device (10) includes: a substrate (1); a wiring (6) formed above the substrate (1); a titanium nitride film (7) formed on the wiring (6); an oxide film (3) formed on the titanium nitride film (7); a silicon nitride film (4) formed on the oxide film (3); and a pad portion (8) exposing the wiring (6), and formed at a place where a first opening portion (91) formed in the silicon nitride film (4) and a second opening portion (92) formed in the titanium nitride film (7) overlap with each other in plan view, and being inside a third opening portion (93) formed in the oxide film (3) in plan view, wherein the silicon nitride film (4) is formed on top of and in contact with the titanium nitride film (7) inside the third opening portion (93) in plan view.

Abstract: A method is provided for manufacturing a speaker diaphragm manufactured using a sheet material made of magnesium or magnesium alloy and including an annular cone portion along an outer peripheral edge of a dome portion. The method includes a dome preformation process of forming a dome preformation portion; a cone preformation process of forming an annular cone preformation portion; and a shaping process of shaping the dome preformation portion into the dome portion by pressing, shaping the cone preformation portion into the cone portion whose outer peripheral end at least extends to a substantially identical height position to a maximum protrusion position of the dome portion, and forming, along a boundary portion between the dome portion and the cone portion, an annular step portion to which a voice coil bobbin is attached.

Abstract: Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.

Abstract: A semiconductor device includes: a substrate; a wiring formed above the substrate; a titanium nitride film formed on the wiring; an oxide film formed on the titanium nitride film; a silicon nitride film formed on the oxide film; and a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon nitride film and a second opening portion formed in the titanium nitride film overlap with each other in plan view, and being inside a third opening portion formed in the oxide film in plan view, wherein the silicon nitride film is formed on top of and in contact with the titanium nitride film inside the third opening portion in plan view.

Abstract: A semiconductor device includes: a substrate; a wiring formed above the substrate; a titanium nitride film formed on the wiring; an oxide film formed on the titanium nitride film; a silicon nitride film formed on the oxide film; and a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon nitride film and a second opening portion formed in the titanium nitride film overlap with each other in plan view, and being inside a third opening portion formed in the oxide film in plan view, wherein the silicon nitride film is formed on top of and in contact with the titanium nitride film inside the third opening portion in plan view.

Abstract: Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.

Abstract: A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

Abstract: A semiconductor device includes a substrate; a laminate which is formed on one main surface side of the substrate, and includes an aluminum alloy wiring and an insulating film surrounding the aluminum alloy wiring; and a silicon nitride film covering the laminate, in which the silicon nitride film and the insulating film have an opening portion, through which the silicon nitride film and the insulating film, formed at a position overlapped with a bonding portion of the aluminum alloy wiring, and a deposition made of a residue caused by reverse sputtering, which contains silicon and nitrogen, adheres to a portion exposed from the opening portion of a surface of the aluminum alloy wiring, to form a film.