Patents by Inventor Shinjiroh Hara

Shinjiroh Hara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing semiconductor device
    Patent number: 8816324
    Abstract: Disclosed is a semiconductor device (10) which comprises a glass substrate (12), a lower electrode layer (14), an n-type doped polycrystalline silicon semiconductor layer (16), a low-temperature insulating film (20) in which openings (22, 23) that serve as nuclei for growth of a nanowire (32) are formed, the nanowire (32) that is grown over the low-temperature insulating film (20) and has a core-shell structure, an insulating layer (50) that surrounds the nanowire (32), and an upper electrode layer (52). The nanowire (32) comprises an n-type GaAs core layer and a p-type GaAs shell layer. Alternatively, the nanowire can be formed as a nanowire having a quantum well structure, and InAs that can allow reduction of the process temperature can be used for the nanowire.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: August 26, 2014
    Assignees: National University Corporation Hokkaido University, Sharp Kabushiki Kaisha
    Inventors: Takashi Fukui, Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20120313078
    Abstract: Disclosed is a semiconductor device (10) which comprises a glass substrate (12), a lower electrode layer (14), an n-type doped polycrystalline silicon semiconductor layer (16), a low-temperature insulating film (20) in which openings (22, 23) that serve as nuclei for growth of a nanowire (32) are formed, the nanowire (32) that is grown over the low-temperature insulating film (20) and has a core-shell structure, an insulating layer (50) that surrounds the nanowire (32), and an upper electrode layer (52). The nanowire (32) comprises an n-type GaAs core layer and a p-type GaAs shell layer. Alternatively, the nanowire can be formed as a nanowire having a quantum well structure, and InAs that can allow reduction of the process temperature can be used for the nanowire.
    Type: Application
    Filed: February 23, 2011
    Publication date: December 13, 2012
    Inventors: Takashi Fukui, Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara