Patents by Inventor Shinjo Sato

Shinjo Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for angular doping of source and drain regions for odd and even NAND blocks
    Patent number: 7790562
    Abstract: Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: September 7, 2010
    Assignee: SanDisk Corporation
    Inventors: Gerrit Jan Hemink, Shinjo Sato