Patents by Inventor Shinkichi Horigome
Shinkichi Horigome has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 4434429Abstract: An information recording member comprising a substrate, and a thin film formed on the substrate with or without an intermediate layer therebetween and irradiated with a recording beam to make an aperture or recess in the thin film, is disclosed in which the thin film is a crystalline film and has a composition expressed by a general formula Se.sub.x Te.sub.y M.sub.z, where x, y and z are given by formulae 0.02.ltoreq.x.ltoreq. 0.35, 0.50.ltoreq.y.ltoreq.0.98 and 0.ltoreq.z.ltoreq.0.45, respectively, and M indicates at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta, and in which the thin film does not deteriorate to such an extent as seen in conventional recording films when a time has elasped, since the thin film is crystalline.Type: GrantFiled: October 15, 1981Date of Patent: February 28, 1984Assignee: Hitachi, Ltd.Inventors: Motoyasu Terao, Shinkichi Horigome, Munehisa Mitsuya, Sakae Ota, Kazuo Shigematsu
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Patent number: 4407880Abstract: A substrate of a recording member comprising a hard base, a first organic substance layer which is formed on the base, and a second organic substance layer which is made of a solvent-soluble organic substance and which is formed on a surface of the first organic substance layer opposite to a surface thereof lying in contact with the base. This substrate can be reused.Type: GrantFiled: November 7, 1980Date of Patent: October 4, 1983Assignee: Hitachi, Ltd.Inventors: Motoyasu Terao, Shinkichi Horigome, Kazuo Shigematsu, Yoshinori Miyamura, Seiji Yonezawa
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Patent number: 4400707Abstract: A recording medium in which a substrate, an inorganic material layer adapted to absorb light and generate heat, a first organic material layer made of an organic matter containing metal, and a second organic material layer adapted to be deformed or removed by heat are successively stacked. A metal salt of an organic acid, or organic metal compound etc. are employed for the first organic material layer. Owing to the presence of this layer, the recording medium exhibits a stability against changes in the ambient temperature.Type: GrantFiled: August 6, 1981Date of Patent: August 23, 1983Assignee: Hitachi, Ltd.Inventors: Munehisa Mitsuya, Motoyasu Terao, Sakae Ota, Yoshio Taniguchi, Toshimitsu Kaku, Shinkichi Horigome
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Patent number: 4385305Abstract: Disclosed is a recording member which comprises a substrate and a recording layer containing at least selenium and at least one element selected from the group consisting of tellurium and bismuth, wherein the selenium content is higher in the vicinity of the surface of the recording layer and/or in the vicinity of the interface between the recording layer and the substrate than the average selenium content in other portions. By virtue of the presence of this high selenium content portion, the oxidation resistance and water resistance are improved, and a recording member having stable characteristics can be obtained.Type: GrantFiled: August 6, 1981Date of Patent: May 24, 1983Assignee: Hitachi, Ltd.Inventors: Motoyasu Terao, Shinkichi Horigome, Munehisa Mitsuya, Sakae Ota
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Patent number: 4378417Abstract: In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.Type: GrantFiled: April 15, 1981Date of Patent: March 29, 1983Assignee: Hitachi, Ltd.Inventors: Eiichi Maruyama, Sachio Ishioka, Yoshinori Imamura, Hirokazu Matsubara, Yasuharu Shimomoto, Shinkichi Horigome, Yoshio Taniguchi
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Patent number: 4377628Abstract: Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm.Type: GrantFiled: April 24, 1981Date of Patent: March 22, 1983Assignee: Hitachi, Ltd.Inventors: Sachio Ishioka, Eiichi Maruyama, Yoshinori Imamura, Hirokazu Matsubara, Shinkichi Horigome
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Patent number: 4365013Abstract: Disclosed is an electrophotographic member having at least a supporter and a photoconductor layer formed mainly of amorphous silicon, characterized in that the amorphous silicon contains at least 50 atomic-% of silicon and at least 1 atomic-% of hydrogen as an average within the layer, and that a part which is at least 10 nm thick from a surface or/and interface of the photoconductor layer toward the interior of the photoconductor layer has a hydrogen content in a range of at least 1 atomic-% to at most 40 atomic-% and an optical forbidden band gap in a range of at least 1.3 eV to at most 2.5 eV and also has the property that an intensity of at least one of peaks having centers at wave numbers of approximately 2,200 cm.sup.-1, approximately 1,140 cm.sup.-1, approximately 1,040 cm.sup.-1, approximately 650 cm.sup.-1, approximately 860 cm.sup.-1 and approximately 800 cm.sup.Type: GrantFiled: July 28, 1981Date of Patent: December 21, 1982Assignee: Hitachi, Ltd.Inventors: Sachio Ishioka, Eiichi Maruyama, Yoshinori Imamura, Hirokazu Matsubara, Shinkichi Horigome
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Patent number: 4357616Abstract: A recording medium having at least a first inorganic material layer which overlies a predetermined substrate and which exhibits a light absorptivity for projected light, and a recording layer which overlies the first inorganic material layer and whose principal component is an organic material. The first inorganic material layer contains at least one element selected from the group consisting of In, Bi, Te, Sb, Ge, Sn, Pb, Cr, Nb, Ni, Pd, Fe, Pt, Re, Ta, Th, Ti, Zr and Tl and the content of the element or elements is at least 65 atomic-%.Further, the first inorganic material layer may well be overlaid with a second inorganic material layer which exhibits a light transmissivity higher than that of this first inorganic material layer. Preferable as the material of the second inorganic material layer is an inorganic material which contains at least one element selected from the group consisting of In, Bi, Te, Sb, Pb, Ge and Sn and at least one element selected from the group consisting of S, Se and O.Type: GrantFiled: March 19, 1980Date of Patent: November 2, 1982Assignee: Hitachi, Ltd.Inventors: Motoyasu Terao, Yoshio Taniguchi, Shinkichi Horigome, Kazuo Shigematsu, Masahiro Ojima, Yoshinori Miyamura, Seiji Yonezawa
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Patent number: 4348461Abstract: A recording member having a predetermined substrate, and a thin film which is formed on the substrate and which is formed with recesses or pits for recording information when irradiated with a working beam, characterized in that said thin film is formed of an inorganic material which contains at least arsenic, selenium and tellurium, and that a distribution of either of said Se and said Te decreases from a part near the surface of said thin film towards a central part thereof, while a distribution of said As increases from a part near the surface towards said central part, is disclosed. This recording member can afford a high signal-to-noise ratio and a long lifetime.Type: GrantFiled: June 18, 1980Date of Patent: September 7, 1982Assignee: Hitachi, Ltd.Inventors: Motoyasu Terao, Yoshio Taniguchi, Shinkichi Horigome, Masahiro Ojima, Kazuo Shigematsu, Keizo Kato, Yoshinori Miyamura, Seiji Yonezawa
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Patent number: 4314014Abstract: Disclosed is an electrophotographic plate having a laminated structure comprising a first Se layer containing 3 to 10% by weight of As, a second Se layer containing 40 to 47% by weight of Te and 3 to 10% by weight of As and a fourth Se layer consisting solely of Se or comprising Se and up to 10% by weight of As or an organic semiconductor layer, wherein a substrate is arranged so that at least the face of the substrate which is contiguous to the face of one of said first Se layer and said fourth Se layer or organic semiconductor layer, that is located on the outer side of the laminated structure, is electrically conductive.It is preferred that the fourth Se layer be formed by vacuum evaporation deposition while maintaining the substrate temperature at 50.degree. to 80.degree. C. The residual potential of the electrophotographic plate can be reduced.Type: GrantFiled: June 11, 1980Date of Patent: February 2, 1982Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Akio Taniguchi, Shinkichi Horigome, Susumu Saito, Yoshiaki Mori, Eiichi Maruyama
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Patent number: 4277452Abstract: The present disclosure is directed to a carbon monoxide absorbing liquid containing a cuprous ion, hydrochloric acid and titanum trichloride.Titanium trichloride is effective in increasing the carbon monoxide absorption quantity. Furthermore, titanium trichloride remarkably increases the oxygen resistance. Therefore, this absorbing liquid can be used continuously and for a long time.Type: GrantFiled: January 8, 1980Date of Patent: July 7, 1981Assignees: Hitachi, Ltd., Babcock-Hitachi Kabushiki KaishaInventors: Keiichi Kanehori, Shinkichi Horigome, Masayuki Katsumoto, Yoshijiro Arikawa
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Patent number: 4187205Abstract: A radiation-sensitive composition comprising a radiation-sensitive polymer which has in its molecule a plurality of epoxy groups and a plurality of bromine atoms, and at least one stabilizer which is selected from the group consisting of compounds having stable free radicals, polymerization inhibitors, ketone-amine reaction products, and phenol derivatives. Even when the composition is preserved for a long term, the characteristics do not change.Type: GrantFiled: February 15, 1978Date of Patent: February 5, 1980Assignees: Nippon Telegraph and Telephone Public Corporation, Hitachi, Ltd.Inventors: Yoshio Hatano, Saburo Nonogaki, Shinkichi Horigome, Shungo Sugawara