Patents by Inventor ShinNam Hong

ShinNam Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High/low work function metal alloys for integrated circuit electrodes
    Patent number: 6873020
    Abstract: Integrated circuit electrodes include an alloy of a first metal and a second metal having lower work function than the first metal. The second metal also may have higher oxygen affinity than the first metal. The first metal may be Ru, Ir, Os, Re and alloys thereof, and the second metal may be Ta, Nb, Al, Hf, Zr, La and alloys thereof. Both NMOS and the PMOS devices can include gate electrodes of an alloy of the first metal and the second metal having lower work function than the first metal. The PMOS gate electrode may have a higher percentage of the first metal relative to the second metal than the NMOS gate electrode. Thus, a common material system may be used for gate electrodes for both NMOS and PMOS devices.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: March 29, 2005
    Assignee: North Carolina State University
    Inventors: Veena Misra, Huicai Zhong, ShinNam Hong
  • High/low work function metal alloys for integrated circuit electrodes and methods of fabricating same
    Publication number: 20030160227
    Abstract: Integrated circuit electrodes include an alloy of a first metal and a second metal having lower work function than the first metal. The second metal also may have higher oxygen affinity than the first metal. The first metal may be Ru, Ir, Os, Re and alloys thereof, and the second metal may be Ta, Nb, Al, Hf, Zr, La and alloys thereof. Both NMOS and the PMOS devices can include gate electrodes of an alloy of the first metal and the second metal having lower work function than the first metal. The PMOS gate electrode may have a higher percentage of the first metal relative to the second metal than the NMOS gate electrode. Thus, a common material system may be used for gate electrodes for both NMOS and PMOS devices.
    Type: Application
    Filed: February 22, 2002
    Publication date: August 28, 2003
    Inventors: Veena Misra, Huicai Zhong, ShinNam Hong