Patents by Inventor Shinnichirou Takatani

Shinnichirou Takatani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit device and radio frequency module
    Patent number: 8824974
    Abstract: The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.
    Type: Grant
    Filed: October 22, 2010
    Date of Patent: September 2, 2014
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Akishige Nakajima, Yasushi Shigeno, Takashi Ogawa, Shinnichirou Takatani, Shinya Osakabe, Tomoyuki Ishikawa
  • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RADIO FREQUENCY MODULE
    Publication number: 20110034137
    Abstract: The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.
    Type: Application
    Filed: October 22, 2010
    Publication date: February 10, 2011
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Akishige NAKAJIMA, Yasushi SHIGENO, Takashi OGAWA, Shinnichirou TAKATANI, Shinya OSAKABE, Tomoyuki ISHIKAWA
  • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RADIO FREQUENCY MODULE
    Publication number: 20080317154
    Abstract: The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.
    Type: Application
    Filed: June 19, 2007
    Publication date: December 25, 2008
    Inventors: Akishige Nakajima, Yasushi Shigeno, Takashi Ogawa, Shinnichirou Takatani, Shinya Osakabe, Tomoyuki Ishikawa