Abstract: A butterfly valve 100 provided in a flow path for a first fluid flowing through a heat exchanger. The butterfly valve 100 includes: a valve plate 110 provided in the flow path; a shaft 120 for rotatably supporting the valve plate 110 in the flow path; and at least one valve plate auxiliary member 130 in contact with at least one plate surface 111a, 111b of the valve plate 100, the valve plate auxiliary member 130 having an extending portion 131 extending radially outwardly from an outer peripheral surface 112 of the valve plate 110. The valve plate auxiliary member 130 is made of a material having a lower Young's modulus than that of the valve plate 110.

Abstract: Embodiments described herein relate a cleaning fixture and method to prevent chemical solutions from contacting the various substrate supporting member features and penetrating into the holes and the metal plate of the substrate supporting surface. The cleaning fixture includes a mounting plate having a plurality of thru-holes arranged on a bolt circle and configured to align with a plurality of thread holes disposed in an electrostatic chuck, a recess formed in the mounting plate, and a gas port formed through the mounting plate. A sealed plenum is formed between the recess of the mounting plate and a lower surface of the electrostatic chuck when the electrostatic chuck is coupled to the mounting plate. The gas port is fluidly coupled to the sealed plenum.

Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The assemblies may include a power transmission rod coupled with the electrode. The power transmission rod may include a material characterized by a coefficient of thermal expansion of less than or about 10×10?6/° C.

Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

Abstract: Embodiments described herein relate a cleaning fixture and method to prevent chemical solutions from contacting the various substrate supporting member features and penetrating into the holes and the metal plate of the substrate supporting surface. The cleaning fixture includes a mounting plate having a plurality of thru-holes arranged on a bolt circle and configured to align with a plurality of thread holes disposed in an electrostatic chuck, a recess formed in the mounting plate, and a gas port formed through the mounting plate. A sealed plenum is formed between the recess of the mounting plate and a lower surface of the electrostatic chuck when the electrostatic chuck is coupled to the mounting plate. The gas port is fluidly coupled to the sealed plenum.