Patents by Inventor Shino Takahashi

Shino Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110237036
    Abstract: By ion-implanting an inert gas, for example, nitrogen into a polycrystalline silicon film in an nMIS forming region from an upper surface of the polycrystalline silicon film down to a predetermined depth, an upper portion of the polycrystalline silicon film is converted to an amorphous form to form an amorphous/polycrystalline silicon film. And then, an n-type impurity, for example, phosphorous is ion-implanted into the amorphous/polycrystalline silicon film to form an n-type amorphous/polycrystalline silicon film, the n-type amorphous/polycrystalline silicon film is processed to form a gate electrode having a gate length shorter than 0.1 ?m, a sidewall formed of an insulating film is formed on a side wall of the gate electrode, and a source/drain diffusion layer is formed. Thereafter, a cobalt silicide (CoSi2) layer is formed on an upper portion of the gate electrode by salicide technique.
    Type: Application
    Filed: June 7, 2011
    Publication date: September 29, 2011
    Inventors: Hiroyuki OHARA, Shino TAKAHASHI, Kenji KANAMITSU, Shuji MATSUO
  • Publication number: 20100019324
    Abstract: By ion-implanting an inert gas, for example, nitrogen into a polycrystalline silicon film in an nMIS forming region from an upper surface of the polycrystalline silicon film down to a predetermined depth, an upper portion of the polycrystalline silicon film is converted to an amorphous form to form an amorphous/polycrystalline silicon film. And then, an n-type impurity, for example, phosphorous is ion-implanted into the amorphous/polycrystalline silicon film to form an n-type amorphous/polycrystalline silicon film, the n-type amorphous/polycrystalline silicon film is processed to form a gate electrode having a gate length shorter than 0.1 ?m, a sidewall formed of an insulating film is formed on a side wall of the gate electrode, and a source/drain diffusion layer is formed. Thereafter, a cobalt silicide (CoSi2) layer is formed on an upper portion of the gate electrode by salicide technique.
    Type: Application
    Filed: December 22, 2006
    Publication date: January 28, 2010
    Inventors: Hiroyuki Ohara, Shino Takahashi, Kenji Kanamitsu, Shuji Matsuo
  • Patent number: 5266877
    Abstract: In the invention, shapes of an insertion head, a jig and components are indicated to enable updating and new registration, and the relative position between the components and the mounter and the mounting process, the mounting sequence and the collision state of each component are indicated. Thereby input of data is facilitated and error of the data can be easily found. Data required at indicating the collision state indication and the name of the mounter to mount the component and the mounting direction, need not be stored by the user.
    Type: Grant
    Filed: September 5, 1990
    Date of Patent: November 30, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Shino Takahashi, Hideaki Kobayashi, Yoshinao Arai
  • Patent number: 5224325
    Abstract: A method of determining the packaging sequence of a packaging machine for mounting parts on a substrate at a plurality of designated positions by placing a substrate on a table and displacing the table relative to a parts holding device the method includes the steps of determining the displacing sequence to satisfy a constraint concerning the packaging sequence and to minimize the total amount of displacement of the table when mounting the parts on the substrate, and grouping together the parts that are to be successively mounted on the substrate at each of the designated positions after the table has been displaced relative to the parts holding device.
    Type: Grant
    Filed: November 6, 1991
    Date of Patent: July 6, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Shino Takahashi, Hideaki Kobayashi, Masahito Takata
  • Patent number: 4706187
    Abstract: The present invention relates to a computer system which can store assembly information and component information for components to be automatically inserted by an insertion machine into a printed board, which can perform required operations based upon the information stored, and which can display and output results of the processings.
    Type: Grant
    Filed: October 16, 1985
    Date of Patent: November 10, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Yoshinao Arai, Shino Takahashi, Eigo Oikawa, Shigeru Sato, Hideaki Kobayashi