Patents by Inventor Shinobu Gonsui

Shinobu Gonsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing solar battery cell
    Patent number: 9837575
    Abstract: The present invention provides a boron diffusion layer forming method capable of sufficiently oxidizing a boron silicide layer formed on a silicon substrate to remove it and obtaining a high-quality boron silicate glass layer. The present invention is a boron diffusion layer forming method of forming a boron diffusion layer on a silicon substrate by a boron diffusion process, the process including a first step of thermally diffusing boron on the silicon substrate and a second step of oxidizing a boron silicide layer formed on the silicon substrate at the first step, wherein the second step has a state at a temperature of 900° C. or higher and a treatment temperature at the first step or lower, for 15 minutes or more.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: December 5, 2017
    Assignee: PANASONIC PRODUCTION ENGINEERING CO., LTD.
    Inventors: Takayuki Ogino, Shinobu Gonsui, Futoshi Kato, Shogo Tasaka, Ryota Aono, Ryosuke Oku, Yasuyuki Kano, Shinji Goda, Naoki Ishikawa
  • METHOD OF MANUFACTURING SOLAR BATTERY CELL
    Publication number: 20150372184
    Abstract: The present invention provides a boron diffusion layer forming method capable of sufficiently oxidizing a boron silicide layer formed on a silicon substrate to remove it and obtaining a high-quality boron silicate glass layer. The present invention is a boron diffusion layer forming method of forming a boron diffusion layer on a silicon substrate by a boron diffusion process, the process including a first step of thermally diffusing boron on the silicon substrate and a second step of oxidizing a boron silicide layer formed on the silicon substrate at the first step, wherein the second step has a state at a temperature of 900° C. or higher and a treatment temperature at the first step or lower, for 15 minutes or more.
    Type: Application
    Filed: January 30, 2014
    Publication date: December 24, 2015
    Inventors: Takayuki Ogino, Shinobu Gonsui, Futoshi Kato, Shogo Tasaka, Ryota Aono, Ryosuke Oku, Yasuyuki Kano, Shinji Goda, Naoki Ishikawa