Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

Abstract: A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.

Abstract: A ferroelectric device having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor over a first insulator, a ferroelectric layer over the first conductor, a second conductor over the ferroelectric layer, a second insulator over the second conductor, and a third insulator surrounding the first conductor, the ferroelectric layer, the second conductor, and the second insulator. The second insulator has a function of capturing or fixing hydrogen, and the third insulator has a function of inhibiting hydrogen diffusion.

Abstract: A semiconductor device with small variation in characteristics and high reliability is provided. In a method for manufacturing the semiconductor device, an oxide is formed, a first insulator is formed over the oxide, a conductor is formed over the first insulator, a second insulator is formed over the conductor, and heat treatment is performed so that hydrogen in the oxide and the first insulator is moved into and absorbed by the second insulator. The second insulator is formed by a sputtering method.

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.

Abstract: A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the metal oxide, the diffusion length of hydrogen is 200 nm or less and absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated with the temperature being 400° C. and 1 hour.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

Abstract: Provided is an arthropod pest control composition, the composition having an superior effect on control of arthropod pests. The composition comprises 0.01 to 0.5% by weight of a neonicotinoid insecticidal compound, 10 to 50% by weight of an organic solvent selected from the group consisting of monoalcohols having 1 to 3 carbon atoms and acetone, and 49.5 to 89.99% by weight of liquefied carbon dioxide, wherein the weight of ethanol to that of the neonicotinoid insecticidal compound is 100 times or more.

Abstract: Provided is an arthropod pest control composition, the composition having an superior effect on control of arthropod pests. The composition comprises 0.01 to 0.5% by weight of a neonicotinoid insecticidal compound, 10 to 50% by weight of an organic solvent selected from the group consisting of monoalcohols having 1 to 3 carbon atoms and acetone, and 49.5 to 89.99% by weight of liquefied carbon dioxide, wherein the weight of ethanol to that of the neonicotinoid insecticidal compound is 100 times or more.

Abstract: In order to provide a controlled-release insect-controlling resin molded product and a insect-controlling resin composition for making such a controlled-release insect-controlling resin molded product that have immediate effectiveness, residual effectiveness, and preservation stability and that are excellent in merchantability and manufacturing control, the present invention uses an insect-controlling resin composition including a polyvinyl chloride resin containing a non-vaporizable insect-controlling component and erucic acid.

Abstract: In order to provide a controlled-release insect-controlling resin molded product and a insect-controlling resin composition for making such a controlled-release insect-controlling resin molded product that have immediate effectiveness, residual effectiveness, and preservation stability and that are excellent in merchantability and manufacturing control, the present invention uses an insect-controlling resin composition including a polyvinyl chloride resin containing a non-vaporizable insect-controlling component and erucic acid.

Abstract: No coupled effects occur even when a plurality of antennas is provided. An insert fitting 12 is formed integrally with an antenna cover such that the insert fitting 12 is arranged overhead of a patch antenna 13 in a position where the gap h satisfies h<<?/4. Further, the width D of the insert fitting 12 and an antenna element 10 secured to the insert fitting 12 is set so as to satisfy D<<?/4, and the insert fitting 12 and the antenna element 10 are extended upwards at a slant. An effect on the emission pattern and electric characteristics of the patch antenna 13 can thereby be prevented even if the antenna element 10 and the insert fitting 12, which are metal conductors, are arranged in proximity to the patch antenna 13.

Abstract: A sludge dehydrating agent which is excellent in storage stability and prevented from becoming water-insoluble during storage and hence can be distributed in the market securely by solving the problem of the conventional dehydrating agents comprising amphoteric polymers that they undergo deterioration and become water-insoluble when stored for long, thus becoming substantially unusable. This dehydrating agent comprises a copolymer composed of cationic vinyl monomer units, vinylic carboxylic acid monomer units and nonionic vinyl monomer units and a salt of a group IIA metal of the periodic table. Preferable examples of the vinylic carboxylic acid monomer include acrylic, methacrylic and crotonic acids, while those of the nonionic vinyl monomer include acrylamide and methacrylamide. The metal salts usable herein include those of mineral acids and organic carboxylic acids, and preferable mineral acid salts include calcium chloride, magnesium chloride and magnesium sulfate.