Patents by Inventor Shinpei OHNISHI

Shinpei OHNISHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 10566325
    Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: February 18, 2020
    Assignee: ROHM CO., LTD.
    Inventors: Kenji Nishida, Shinpei Ohnishi, Kentaro Nasu
  • SEMICONDUCTOR DEVICE
    Publication number: 20180374844
    Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.
    Type: Application
    Filed: August 20, 2018
    Publication date: December 27, 2018
    Inventors: Kenji NISHIDA, Shinpei OHNISHI, Kentaro NASU
  • Semiconductor device
    Patent number: 10090294
    Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: October 2, 2018
    Assignee: ROHM CO., LTD.
    Inventors: Kenji Nishida, Shinpei Ohnishi, Kentaro Nasu
  • SEMICONDUCTOR DEVICE
    Publication number: 20170256536
    Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.
    Type: Application
    Filed: March 3, 2017
    Publication date: September 7, 2017
    Inventors: Kenji NISHIDA, Shinpei OHNISHI, Kentaro NASU