Abstract: According to one embodiment of a method of manufacturing a semiconductor device, a film stack in which a first film and a second film are alternately and repeatedly stacked is formed on a semiconductor substrate. Further, silicon oxide which is a first interlayer insulation film is formed at a non-stack area where the film stack is not disposed up to a predetermined height. Furthermore, a silicon compound film including at least one of nitride, carbon, and boron is embedded as a second interlayer insulation film in a recessed portion inside the non-stack area. Additionally, dry etching processing is simultaneously applied to the film stack, and the first and second interlayer insulation films by using a fluorocarbon-based gas.

Abstract: A reflection type photomask blank includes: a substrate; a multilayer reflection film formed on the substrate for reflecting exposure light; a protection film formed on the multilayer reflection film for protecting the multilayer reflection film; an absorber layer for absorbing the exposure light on the protection film; and a shock absorbing film formed between the absorber layer and the protection film, with a resistance to etching which is performed when an exposure transfer pattern of the absorber layer is formed, in which the protection film is: a compound including Zr and Si; a compound including Zr, Si, and at least either one of O and N; or a single element or a compound including at least any one of Ru, C, and Y.

Abstract: A reflection type photomask blank includes: a substrate; a multilayer reflection film formed on the substrate for reflecting exposure light; a protection film formed on the multilayer reflection film for protecting the multilayer reflection film; an absorber layer for absorbing the exposure light on the protection film; and a shock absorbing film formed between the absorber layer and the protection film, with a resistance to etching which is performed when an exposure transfer pattern of the absorber layer is formed, in which the protection film is: a compound including Zr and Si; a compound including Zr, Si, and at least either one of O and N; or a single element or a compound including at least any one of Ru, C, and Y.

Abstract: A packaging case comprising two boxes or bags can be open right and left or closed like a book. At the time when the packaging case is open, holes or slits provided at the upper surfaces of the boxes or bags are appeared so that a pair of three-dimensional hand coverings stored in the boxes or bags can be taken out one by one. At the time when the packaging case is closed, the holes or the slits are concealed to prevent the boxes or the bags from entering of the dust.