Abstract: A rotary adsorption/desorption gas treating apparatus includes a rotary drum rotatable along a rotation axis and having a plurality of gas passage compartments arranged in a peripheral direction of the drum. The apparatus further includes an adsorbing element cassette mounted inside each of the gas passage compartments and including a gas-permeable adsorbing mat. The rotational range of the rotary drum is divided between an adsorption zone and a desorption zone. In the adsorption zone, a treatment subject gas is allowed to pass the gas passage compartments in the direction along the rotation axis of the rotary drum. In the desorption zone, a refreshing gas is allowed to pass the gas passage compartments in the direction along the rotation axis of the rotary drum. The adsorbing mat, when mounted in the compartment, includes a portion thereof oriented normal or inclined relative to a side end face of the rotary drum.

Abstract: A device, for releasing a locked trigger set by a set-trigger mechanism in a gun having a receiver, a bolt loosely inserted in the receiver, and a bolt handle for rotating and reciprocating the bolt so as to load a bullet and set in a fire-enabling state, includes an abutting portion formed on the bolt handle, and a release link positioned for contact with the abutting portion and a trigger in accordance with a rotational movement of the bolt handle. The trigger locked by the set-trigger mechanism is released when the bolt handle is rotated up to a fire-disabling position, causing the abutting portion to push the release link against the trigger to unlock it. With this construction above, when the bolt handle is in the fire-disabling state, the trigger can never be in the locked position, which enables a safe and secure release of the locked trigger and safe bullet loading and/or removal.

Abstract: In a method of smoothing the edges of a window through a PSG film of a semiconductor device, a masking film is provided under the PSG film, so as to prevent impurities of the PSG film from penetrating into semiconductor substrate during the heating of the PSG film for the smoothing of the edges. A masking film, for example, an Si.sub.3 N.sub.4 film, does not, however, inhibit the penetration of hydrogen gas, which can improve the properties of an MIS semiconductor device.

Abstract: In a process for producing a semiconductor device having a protecting glass film containing an impurity of a first conductivity type, a masking film is formed on the surface of at least a portion of a region of a second conductivity type opposite to the first conductivity type, this region being within a semiconductor substrate. The masking film is not etched by an etching agent for the protecting glass film and prevents the impurity issuing out of the protecting glass film from entering into the region when the surface of the protecting glass film is smoothed by heating it. After the heating treatment the masking film is at least partly removed to make the window for an electrode contact to the region of the second conductivity type.