Abstract: The present invention focuses on a silicon nitride substrate having high mechanical strength, high thermal conductivity and the like, and takes advantage of such properties to provide: a ceramic substrate capable of providing improvement in a bonding property between a silicon nitride substrate and a ceramic layer which uses a dielectric ceramic material capable of being simultaneously sintered with a low-resistance conductive material such as a low-melting metal (Ag or Cu); and a method for producing the ceramic substrate. The ceramic substrate of the present invention is obtained by stacking and bonding a silicon nitride substrate and a ceramic layer composed of a dielectric ceramic material, wherein: the dielectric ceramic material contains Mg, Al, and Si as main ingredients, and Bi or B as an accessory ingredient; and the ceramic layer includes a region with a high Si element concentration at a bonding interface with the silicon nitride substrate.

Abstract: The present invention focuses on a silicon nitride substrate having high mechanical strength, high thermal conductivity and the like, and takes advantage of such properties to provide: a ceramic substrate capable of providing improvement in a bonding property between a silicon nitride substrate and a ceramic layer which uses a dielectric ceramic material capable of being simultaneously sintered with a low-resistance conductive material such as a low-melting metal (Ag or Cu); and a method for producing the ceramic substrate. The ceramic substrate of the present invention is obtained by stacking and bonding a silicon nitride substrate and a ceramic layer composed of a dielectric ceramic material, wherein: the dielectric ceramic material contains Mg, Al, and Si as main ingredients, and Bi or B as an accessory ingredient; and the ceramic layer includes a region with a high Si element concentration at a bonding interface with the silicon nitride substrate.

Abstract: A method for producing a single crystal scintillator material according to the present invention includes the steps of: providing a solvent including: at least one element selected from the group consisting of Li, Na, K, Rb and Cs; W and/or Mo; B; and oxygen; melting a Ce compound and a Lu compound that have been mixed with the solvent by heating the mixture to a temperature of 800° C. to 1,350° C.; and growing a single crystal by cooling the compounds melted. The single crystal is represented by the compositional formula (CexLu1-x)BO3, in which the mole fraction x of Ce satisfies 0.0001?x?0.05.

Abstract: A radio wave absorption material is characterized to be obtained by firing a ferrite material that is formed by adding an accessory component, 0.1 to 2 wt % of CoO, to an oxide magnetic material containing main components, 30 to 49.5 mol % of Fe2O3, 0.5 to 20 mol % of Mn2O3, 5 to 35 mol % of ZnO, 0.2 to 15 mol % of (Li0.5Fe0.5)O and MnO as the rest. In the above-mentioned composition, part of ZnO may be replaced with 20 mol % or less of CuO. This radio wave absorption material has high strength and humidity stability and has excellent radio wave absorption performance although low in cost.

Abstract: A method for producing a single crystal scintillator material according to the present invention includes the steps of: providing a solvent including: at least one element selected from the group consisting of Li, Na, K, Rb and Cs; W and/or Mo; B; and oxygen; melting a Ce compound and a Lu compound that have been mixed with the solvent by heating the mixture to a temperature of 800° C. to 1,350° C.; and growing a single crystal by cooling the compounds melted. The single crystal is represented by the compositional formula (CexLu1-x)BO3, in which the mole fraction x of Ce satisfies 0.0001?x?0.05.

Abstract: A radio wave absorption material is characterized to be obtained by firing a ferrite material that is formed by adding an accessory component, 0.1 to 2 wt % of CoO, to an oxide magnetic material containing main components, 30 to 49.5 mol % of Fe2O3, 0.5 to 20 mol % of Mn2O3, 5 to 35 mol % of ZnO, 0.2 to 15 mol % of (Li0.5Fe0.5)O and MnO as the rest. In the above-mentioned composition, part of ZnO may be replaced with 20 mol % or less of CuO. This radio wave absorption material has high strength and humidity stability and has excellent radio wave absorption performance although low in cost.