Abstract: The present invention relates to an electrolyte solution comprising a supporting salt, a nonaqueous solvent containing a compound having a viscosity of 1.0 mPa-s or less in an amount of more than 50% by volume in the nonaqueous solvent, and a halogenated cyclic acid anhydride. According to the present invention, an electrolyte solution capable of suppressing gas generation is provided.

Abstract: The present invention relates to an electrolytic solution comprising a cyclic dicarboxylic acid ester represented by the specific formula, and the secondary battery comprising the same. According to the present invention, the electrolytic solution comprising an additive which can improve a characteristics in a secondary battery and a secondary battery comprising the same can be provided.

Abstract: It is an object of the present invention to provide an electrolytic solution capable of suppressing gas generation. The present exemplary embodiment is an electrolytic solution comprising a supporting salt, a nonaqueous solvent that dissolves the supporting salt, a cyclic sulfonic acid ester compound represented by predetermined formula (1), and an acid anhydride. According to the exemplary embodiment, an electrolytic solution capable of suppressing gas generation can be provided.

Abstract: The present invention relates to an electrolyte solution for a lithium secondary battery, which contains a sulfonate compound represented by a specific formula and carboxylic anhydride having one or more C?C double bonds, and a lithium secondary battery using the same.

Abstract: The present invention relates to an electrolyte solution comprising a supporting salt, a nonaqueous solvent containing a compound having a viscosity of 1.0 mPa-s or less in an amount of more than 50% by volume in the nonaqueous solvent, and a halogenated cyclic acid anhydride. According to the present invention, an electrolyte solution capable of suppressing gas generation is provided.

Abstract: The present invention relates to an electrolytic solution comprising a cyclic dicarboxylic acid ester represented by the specific formula, and the secondary battery comprising the same. According to the present invention, the electrolytic solution comprising an additive which can improve a characteristics in a secondary battery and a secondary battery comprising the same can be provided.

Abstract: It is an object of the present invention to provide an electrolytic solution capable of suppressing gas generation. The present exemplary embodiment is an electrolytic solution comprising a supporting salt, a nonaqueous solvent that dissolves the supporting salt, a cyclic sulfonic acid ester compound represented by predetermined formula (1), and an acid anhydride. According to the exemplary embodiment, an electrolytic solution capable of suppressing gas generation can be provided.

Abstract: The present invention relates to an electrolyte solution for a lithium secondary battery, which contains a sulfonate compound represented by a specific formula and carboxylic anhydride having one or more C?C double bonds, and a lithium secondary battery using the same.

Abstract: An embodiment of the present invention relates to a lithium secondary battery comprising: a positive electrode comprising a positive electrode active material; and an electrolytic solution comprising a nonaqueous electrolytic solvent, wherein the positive electrode active material operates at a potential of 4.5 V or more versus lithium, and the electrolytic solution comprises: the nonaqueous electrolytic solvent comprising a fluorine-containing phosphate ester represented by a given formula; and a cyclic sulfonate ester represented by a given formula.

Abstract: The object of an exemplary embodiment of the invention is to provide a lithium secondary battery which has high energy density by containing a positive electrode active substance operating at a potential of 4.5 V or higher with respect to lithium and which has excellent cycle property. An exemplary embodiment of the invention is an lithium secondary battery, which comprises a positive electrode comprising a positive electrode active substance and an electrolyte liquid comprising a nonaqueous electrolyte solvent; wherein the positive electrode active substance operates at a potential of 4.5 V or higher with respect to lithium; and wherein the nonaqueous electrolyte solvent comprises a fluorine-containing phosphate represented by a prescribed formula.

Abstract: A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer; and a wiring layer provided between the first ferromagnetic layer and the MTJ device. The MTJ device includes a second ferromagnetic layer opposing to the wiring layer. A first perpendicular projection of the first ferromagnetic layer on the substrate and a second perpendicular projection of the second ferromagnetic layer on the substrate are different in area, and one of the first and second perpendicular projections contains the other.

Abstract: A thin-film magnetic head is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. A concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

Abstract: A thin-film magnetic head is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. A concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

Abstract: A thin-film magnetic head is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. A concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

Abstract: To accurately decrease the gap depth between an upper pole layer and a lower pole layer and the front-end portion width of the upper pole layer. A thin-film magnetic head of the present invention is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. Moreover, a concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

Abstract: To accurately decrease the gap depth between an upper pole layer and a lower pole layer and the front-end portion width of the upper pole layer. A thin-film magnetic head of the present invention is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. Moreover, a concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

Abstract: A magnetic random access memory includes a substrate; a first ferromagnetic layer; a magnetic tunnel junction (MTJ) device provided on a same side of the substrate as the first ferromagnetic layer; and a wiring layer provided between the first ferromagnetic layer and the MTJ device. The MTJ device includes a second ferromagnetic layer opposing to the wiring layer. A first perpendicular projection of the first ferromagnetic layer on the substrate and a second perpendicular projection of the second ferromagnetic layer on the substrate are different in area, and one of the first and second perpendicular projections contains the other.

Abstract: A thin film magnetic head includes a recording pole layer that is divided into a tip portion, a wide rear portion, a flare portion, and a yoke portion as viewed from the air bearing surface (ABS). The tip portion and the wide rear portion directly contact a write gap layer. Part of the wide rear portion has a greater width that the tip portion. The wide rear portion is provided between the tip portion and the flare portion to reduce magnetic reluctance. Accordingly, it is possible to improve the pattern accuracy of the tip portion width by providing the flare portion, which reflects a large quantity of light, far from the ABS, while preventing an increase of the magnetic reluctance.

Abstract: A thin-film magnetic head is constituted by forming a lower shielding layer, a read gap layer holding an MR magnetosensitive element, a common pole layer, and a write gap layer in order on an insulating substrate, forming a first flattening layer, a coil pattern layer, and a second flattening layer laminated in order on the write gap layer excluding the vicinity of an ABS plane, and forming an upper pole layer on the write gap layer and the second flattening layer nearby an ABS plane. A concave portion is formed on the common pole layer at a position separated from the ABS plane, the concave portion is filled with a nonmagnetic body, and the gap depth between the upper pole layer and the common pole layer is determined by the concave portion.

Abstract: To accurately decrease the gap depth between an upper pole layer and a lower pole layer and the front-end portion width of the upper pole layer.