Patents by Inventor Shinsaku Saitoh

Shinsaku Saitoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6798626
    Abstract: A magnetoresistive effect element which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the element and a magnetic recording apparatus utilizing the element. This magnetoresistive effect element utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.
    Type: Grant
    Filed: February 3, 2003
    Date of Patent: September 28, 2004
    Assignee: NEC Corporation
    Inventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Eizo Fukami, Kiyokazu Nagahara, Hiroaki Honjou, Shinsaku Saitoh
  • Patent number: 6718621
    Abstract: In a production process of an MR head using the tunnel junction film basically consisting of a free layer, a barrier layer, and a pinned layer, the resistance between the free layer and the pined layer reduced beforehand and increased afterward up to a resistance value necessary when actually used. While the resistance between the free layer and the pinned layer is low, current can easily flow, suppressing charge up, thus preventing insulation destruction of the barrier layer. This significantly increases a production yield of a recording/reproduction head using a ferromagnetic tunnel junction element.
    Type: Grant
    Filed: May 9, 2000
    Date of Patent: April 13, 2004
    Assignee: NEC Corporation
    Inventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Eizo Fukami, Kiyokazu Nagahara, Hiroaki Honjo, Shinsaku Saitoh
  • Patent number: 6624987
    Abstract: A magnetoresistive effect head which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the head and a magnetic recording apparatus utilizing the head. This magnetoresistive effect head utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.
    Type: Grant
    Filed: May 31, 2000
    Date of Patent: September 23, 2003
    Assignee: NEC Corporation
    Inventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Eizo Fukami, Kiyokazu Nagahara, Hiroaki Honjou, Shinsaku Saitoh
  • Publication number: 20030151859
    Abstract: A magnetoresistive effect element which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the element and a magnetic recording apparatus utilizing the element. This magnetoresistive effect element utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.
    Type: Application
    Filed: February 3, 2003
    Publication date: August 14, 2003
    Applicant: NEC CORPORATION
    Inventors: Kazuhiko Hayashi, Keishi Ohashi, Nobuyuki Ishiwata, Masafumi Nakada, Eizo Fukami, Kiyokazu Nagahara, Hiroaki Honjou, Shinsaku Saitoh