Patents by Inventor Shinsuke Yamanaka

Shinsuke Yamanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thermoelectric conversion material and method of production thereof
    Patent number: 10115879
    Abstract: Provided herein is a skutterudite-type material having high thermoelectric conversion characteristics in a high temperature region. A thermoelectric conversion material is provided that contains a skutterudite-type material represented by the following composition formula (I) IxGayM4Pn12??(I), wherein x and y satisfy 0.04?x?0.11, 0.11?y?0.34, and x<y, I represents one or more elements selected from the group consisting of In, Yb, Eu, Ce, La, Nd, Ba, and Sr, M represents one or more elements selected from the group consisting of Co, Rh, Ir, Fe, Ni, Pt, Pd, Ru, and Os, and Pn represents one or more elements selected from the group consisting of Sb, As, P, Te, Sn, Bi, Ge, Se, and Si.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: October 30, 2018
    Assignee: Panasonic Corporation
    Inventors: Ken Kurosaki, Shinsuke Yamanaka, Yusufu Aikebaier, Seongho Choi, Junya Tanaka, Satoshi Maeshima
  • THERMOELECTRIC CONVERSION MATERIAL AND METHOD OF PRODUCTION THEREOF
    Publication number: 20170263839
    Abstract: Provided herein is a skutterudite-type material having high thermoelectric conversion characteristics in a high temperature region. A thermoelectric conversion material is provided that contains a skutterudite-type material represented by the following composition formula (I) IxGayM4Pn12 ??(I), wherein x and y satisfy 0.04?x?0.11, 0.11?y?0.34, and x<y, I represents one or more elements selected from the group consisting of In, Yb, Eu, Ce, La, Nd, Ba, and Sr, M represents one or more elements selected from the group consisting of Co, Rh, Ir, Fe, Ni, Pt, Pd, Ru, and Os, and Pn. represents one or more elements selected from the group consisting of Sb, As, P, Te, Sn, Bi, Ge, Se, and Si.
    Type: Application
    Filed: January 27, 2017
    Publication date: September 14, 2017
    Inventors: KEN KUROSAKI, SHINSUKE YAMANAKA, YUSUFU AIKEBAIER, SEONGHO CHOI, JUNYA TANAKA, SATOSHI MAESHIMA
  • Oxide nanostructure, method for producing same, and use thereof
    Publication number: 20050255315
    Abstract: The present invention provides a method of preparing directly a desired nano-structure of oxide without electrolyzing the target oxide, a nano-structure having structural resistance and various useful uses of the nano-structure. Into a solution containing a fluoride complex ion comprising metal element of the target oxide in which the metal is at least one selected from the group consisting of transition metal elements, group IA elements, group IIA elements, group IIIB elements, group IVB elements, group VB elements and group VIB elements, a template having nano-structure made from oxide is immersed, and the reaction condition is adjusted to substitute oxide of the template with the target oxide.
    Type: Application
    Filed: December 12, 2003
    Publication date: November 17, 2005
    Inventors: Shinsuke Yamanaka, Tsuyoshi Hamaguchi, Masayoshi Uno, Ken Kurosaki, Hiroaki Muta, Kouichi Kugimiya