Abstract: Provided is a semiconductor device having excellent heat dissipation at low cost. The semiconductor device includes a heat spreader, a semiconductor element, a metal block, a terminal having a plate shape, and a sealing material. The semiconductor element includes a front surface electrode and is mounted on an upper surface of the heat spreader. The metal block includes a bonding surface bonded to the front surface electrode and a heat dissipating surface connected to the upper surface with interposition of the insulating member. The metal block is provided so as to straddle above one side of the semiconductor element. The first end of the terminal is bonded to the metal block. The second end of the terminal is exposed from the sealing material and formed to be connectable to an external circuit. The sealing material seals the heat spreader, the semiconductor element, the metal block, and the first end.

Abstract: A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material; an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and a lead electrode connecting the semiconductor element to the insulating component, wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material, an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material, and the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material.

Abstract: An object of the present invention is to provide a semiconductor device in which the effect of dimensional tolerance can be reduced, and a method for manufacturing the same. The semiconductor device according to the present invention includes: a plurality of cooling plates each having a coolant passage inside; spacers disposed to stack the cooling plates with spaces; at least one semiconductor package disposed on at least one principal surface of at least one of the cooling plates; and a spring plate disposed between adjacent ones of the cooling plates, the spring plate biasing the at least one semiconductor package toward the cooling plates.

Abstract: A semiconductor device includes: a metal block; a semiconductor element fixed to an upper surface of the block with a first joining material; a main terminal fixed to an upper surface of the element with a second joining material; a signal terminal electrically connected to the element; and a mold resin covers the element, the first and second joining materials, a part of the block, of the main and signal terminals. In the element, a current flows in a longitudinal direction. A lower surface of the block is exposed from the resin. The main and the signal terminals are exposed from a side surface of the resin. The main terminal has a first portion in the resin, a second portion continuous with the first portion and bent downward outside the resin, and a third portion continuous with the second portion and substantially parallel to a lower surface of the resin.

Abstract: A semiconductor device according to the present invention includes a cooler, a semiconductor package provided on an upper surface of the cooler, a metal plate having a main section provided on an upper surface of the semiconductor package, a spring that is provided above the main section and presses the main section toward the upper surface of the semiconductor package with an elastic force and a fixture that fixes the spring to an upper surface of the main section with the spring exerting the elastic force, wherein a surface, which faces the upper surface of the semiconductor package, of the main section is flat.

Abstract: The present invention relates to a semiconductor device including: a semiconductor substrate having: an active region through which a main current flows; and a termination region around the active region; a polyimide film disposed in the active region and the termination region; and a passivation film disposed as a film underlying the polyimide film, wherein the termination region includes, in order from a side of the active region, a breakdown voltage holding region and an outermost peripheral region, the polyimide film is disposed except for a dicing remaining portion of the outermost peripheral region, and the passivation film is disposed, as the underlying film, at least in a region where the polyimide film is disposed.

Abstract: A casting device includes a mold provided with an insert die, a molten metal supply device for supplying molten metal into the mold, and a gas supply mechanism for supplying a gas, which is used for forced cooling, to the insert die. The insert die is made of tungsten having a thermal conductivity significantly higher than that of die steel. The insert die has a spiral or meandering gas passage therein. The spiral or meandering gas passage has a passage length much longer than a straight passage.

Abstract: A semiconductor apparatus includes a metal body in which a through hole is formed, a socket that covers the metal body without closing the through hole, a connection terminal connected to the metal body and exposed to an outside of the socket, a control board having a metal pattern and a circuit pattern, and a semiconductor chip having a control terminal connected to the circuit pattern via the through hole without being in contact with the metal body, the connection terminal being connected to the metal pattern.

Abstract: A casting device includes a mold provided with an insert die, a molten metal supply device for supplying molten metal into the mold, and a gas supply mechanism for supplying a gas, which is used for forced cooling, to the insert die. The insert die is made of tungsten having a thermal conductivity significantly higher than that of die steel. The insert die has a spiral or meandering gas passage therein. The spiral or meandering gas passage has a passage length much longer than a straight passage.

Abstract: An object of the present invention is to provide a semiconductor device in which the effect of dimensional tolerance can be reduced, and a method for manufacturing the same. The semiconductor device according to the present invention includes: a plurality of cooling plates each having a coolant passage inside; spacers disposed to stack the cooling plates with spaces; at least one semiconductor package disposed on at least one principal surface of at least one of the cooling plates; and a spring plate disposed between adjacent ones of the cooling plates, the spring plate biasing the at least one semiconductor package toward the cooling plates.

Abstract: A semiconductor apparatus includes a metal body in which a through hole is formed, a socket that covers the metal body without closing the through hole, a connection terminal connected to the metal body and exposed to an outside of the socket, a control board having a metal pattern and a circuit pattern, and a semiconductor chip having a control terminal connected to the circuit pattern via the through hole without being in contact with the metal body, the connection terminal being connected to the metal pattern.

Abstract: A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

Abstract: A first switching element and a second switching element are thermally connected to each other since the first switching element and the second switching element are fixed on a second substrate. An upper arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element. The lower arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element.

Abstract: A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

Abstract: A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

Abstract: According to the present invention, a grease layer having a grease as a constituent material is provided in a filling region lying between a heat dissipation surface that is a bottom surface of a heat dissipation material of a semiconductor module and a surface of a cooler. Further, a seal material is formed on the surface of the cooler and covers the entire side surface region of the grease layer without any gap. The seal material has a liquid curable sealing agent as a constituent material.

Abstract: A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

Abstract: A semiconductor device includes a semiconductor element having a gate and controlled with a gate voltage, a gate drive circuit which controls the gate voltage, an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode, a temperature sensing part which senses the temperature of the electrode, a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature, and a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited.

Abstract: Fixing a semiconductor element to a substrate, electrically connecting signal and main terminals to the semiconductor element, a terminal aggregate includes a frame portion, the signal terminal, the main terminal, which has a larger width than the signal terminal, and a dummy terminal, and forming a to-be-encapsulated body in which the substrate, the semiconductor element, and the terminal aggregate are integrated, mounting the to-be-encapsulated body on a lower mold half such that a plurality of blocks formed in the lower mold half are meshed with the signal, main, and dummy terminals with no space left therebetween after the mounting, placing a bottom surface of an upper mold half on top surfaces of the plurality of blocks, and top surfaces of the signal, main, and dummy terminals to form a cavity for the substrate and the semiconductor element, and performing molding by injecting mold resin into the cavity are included.

Abstract: An object of the present invention is to achieve reductions in size and costs of a vehicle-mounted motor driving control board in a configuration which allows the redundancy of a power supply to be ensured. The vehicle-mounted motor driving control board is formed by one printed circuit board on which are formed two inverter driving circuits for driving two inverter circuits for three-phase motors, and a voltage step-up/step-down driving circuit for driving a voltage step-up/step-down circuit for supplying electric power to the inverter circuits. The vehicle-mounted motor driving control board further includes a first power supply circuit for supplying electric power to part of constituent circuits constituting the voltage step-up/step-down driving circuit and the two inverter driving circuits, and a second power supply circuit for supplying electric power to the remainder of the constituent circuits in the voltage step-up/step-down driving circuit and the two inverter driving circuits.