Abstract: This polishing method and polishing apparatus include: a polishing characteristics measurement step in which electrochemical characteristics of a slurry in relation to a material to be polished are measured; and a preparation step in which the slurry is prepared based on the measured electrochemical characteristics, wherein, in the polishing characteristics measurement step, a slurry is supplied from a slurry supply apparatus 202, and using a sample polishing pad that is formed from the same material as the polishing pad and a sample material to be polished that is formed from the same material as the material to be polished, the electrochemical characteristics are measured both when the sample material to be polished is being polished by the sample polishing pad and when the sample material to be polished is not being polished by the sample polishing pad.

Abstract: A polishing apparatus is provided for optimizing a polishing profile in consideration of even such parameters as the temperature on the surface of an object to be polished, and the thickness of a polishing pad, in addition to a polished amount. The polishing apparatus for polishing the object to be polished under control of a control unit CU has at least two pressing sections, and comprises a top ring which can apply an arbitrary pressure to the object to be polished from each of the pressing sections, a measuring device IM for measuring a polished amount of the object to be polished, and a monitoring device SM for monitoring the object to be polished for a polishing condition. The control unit CU forces the polishing apparatus to polish the object to be polished in accordance with a simulation program for setting processing pressures required to optimize a polishing profile of the object to be polished to the top ring based on the output of the measuring device IM and the output of the monitoring device SM.

Abstract: A polishing method for polishing a workpiece using the chemical polishing process endpoint detecting technology is applicable to actual polishing processes and polishing apparatus. The polishing method including pressing the workpiece against a polishing surface of a polishing table, moving the workpiece and the polishing surface relatively to each other to polish the workpiece, and disposing a gas suction pipe having a gas inlet port, directly above the polishing surface, supplying an atmospheric gas from above the polishing surface through the gas inlet port to a gas detector via the gas suction pipe, and monitoring a particular gas contained in the atmospheric gas with the gas detector while the workpiece is being polished.