Abstract: A detection apparatus includes a sample holding section, an irradiation means, a detection means, a calculation means, and an evaluation means. The irradiation means irradiates a substance held in the sample holding section with a THz wave. The detection unit detects a THz wave that has passed through or been reflected from the substance. The calculation unit determines a frequency dependence of a property of the substance with respect to the irradiated THz wave and then calculates a slope of a straight line or a slope of a straight line obtained by straight-line approximation of the frequency dependence of the property of the substance. The evaluation unit evaluates the state change of the substance by comparing a previously-obtained slope of a straight line of the frequency dependence of the property of the substance in a standard state and the slope of the straight line of the substance calculated.

Abstract: A detection apparatus for detecting electromagnetic waves that have passed through an object is provided which includes a transmission line for transmitting electromagnetic waves therethrough and a detector for detecting electromagnetic waves that have passed through an object, the transmission line having a gap for disposing the object therein.

Abstract: The invention is to provide an inspection apparatus causing interactions of plural times between an object and an electromagnetic wave, thereby enabling inspection with a satisfactory sensitivity even for an object of a trace amount. The inspection apparatus detects information from an object 112 based on a change in an electromagnetic wave transmission state caused by plural times of interactions between the electromagnetic wave and the object 112.

Abstract: The present invention provides an optical semiconductor device including a semiconductor thin film (4) having photoconductivity and a pair of electrodes (5) and (10) for applying an electric field to an inside of the semiconductor thin film (4) in a direction approximately vertical to a surface of the semiconductor thin film (4), wherein the semiconductor thin film (4) generates an electromagnetic wave when light is applied to a region thereof to which the electric field is applied. The electrodes are provided to a front surface and a back surface of the semiconductor thin film (4) with the semiconductor thin film interposed therebetween.

Abstract: A deflection device includes a tabular object for transmitting or reflecting an electromagnetic wave, a drive unit for driving the tabular object so as to rotate or perform a translation motion, and an electromagnetic wave irradiation unit for irradiating the tabular object with an electromagnetic wave so that an irradiation area extending in a direction intersecting a direction of the rotation or translation motion of the tabular object is formed.

Abstract: A detection apparatus includes a sample holding section, an irradiation means, a detection means, a calculation means, and an evaluation means. The irradiation means irradiates a substance held in the sample holding section with a THz wave. The detection unit detects a THz wave passed through or reflected from the substance. The calculation unit determines a frequency dependence of a property of the substance with respect to the irradiated THz wave and then calculates a slope of a straight line or a slope of a straight line obtained by straight-line approximation of the frequency dependence of the property of the substance. The evaluation unit evaluates the state change of the substance by comparing a previously-obtained slope of a straight line of the frequency dependence of the property of the substance in a standard state and the slope of the straight line of the substance calculated.

Abstract: An inspection apparatus including a transmission line for propagating an electromagnetic wave; an electromagnetic wave supply unit for supplying a terahertz wave to the transmission line; an electromagnetic wave detection unit for detecting the terahertz wave from the transmission line; a conductive region; an inspection object supply unit; and a deposition unit. The conductive region is arranged at a site including at least a part of the range to which an electric field distribution of the electromagnetic wave propagating through the transmission line extends. The inspection object supply unit holds and supplies the inspection object to the outside, and the deposition unit deposits the inspection object selectively on the conductive region by electrostatic force. The electromagnetic wave supplied from the electromagnetic wave supply unit and propagated through the transmission line is detected by the electromagnetic wave detection unit to obtain information on the inspection object.

Abstract: A detecting apparatus for detecting information of a liquid object or sample includes a transmission path, a THz wave supplying unit, a THz wave detecting unit, and an infiltrative holding member for infiltration and holding of a liquid object. The supplying unit supplies an electromagnetic wave in a frequency range between 30 GHz and 30 THz to the transmission path. The detecting unit detects the THz wave transmitted through the transmission path. The infiltrative holding member is set at a location containing at least a portion in which an electric field distribution of the THz wave propagating along the transmission path extends.

Abstract: Provided are an analysis method and an analysis apparatus that can perform analysis of a substance and information obtainment with relatively high accuracy and reproducibility without previously allowing a carrier to carry a reagent for a color reaction. In the analysis method and the analysis apparatus, the information on an analyte is obtained by using an electromagnetic wave of a frequency including a frequency band which is at least a part of a frequency range of 30 GHz or more and 30 THz or less. A non-fibrous, isotropic porous material is allowed to hold the analyte, the analyte held by the porous material is irradiated with the electromagnetic wave, a change in the propagation state of the electromagnetic wave due to transmission through or reflection by the porous material is detected and information on the analyte is obtained based on the result of the detection.

Abstract: A sensor is provided which comprises a waveguide for allowing an electromagnetic wave to propagate therethrough and disposing an object at a plurality of positions thereof, and a detecting portion for detecting the electromagnetic wave which has interacted with the object at the plurality of positions and propagated through the waveguide, wherein a property of the object is analyzed or identified based on an information obtained from the electromagnetic wave detected by the detecting portion. Thereby, accurate detection can be effected even when the amount of an object is small.

Abstract: A fabrication method of fabricating a structure capable of being used for generation or detection of electromagnetic radiation includes a forming step of forming a layer containing a compound semiconductor on a substrate at a substrate temperature below about 300° C., a first heating step of heating the substrate with the layer in an ambience containing arsenic, and a second heating step of heating the substrate with the layer at the substrate temperature above about 600° C. in a gas ambience incapable of chemically reacting on the compound semiconductor. Structures of the present invention capable of being used for generation or detection of electromagnetic radiation can be fabricated using the fabrication method by appropriately regulating the substrate temperature, the heating time, the gas ambience and the like in the second heating step.