Abstract: Methods are disclosed for manufacturing masks for charged-particle-beam (CPB) or X-ray transfer. The masks have substantially no pattern defects. In a representative method for making stencil masks, the mask is defined using multiple subfields each having a respective pattern of voids. The subfields are separated from each other by boundary regions lacking any pattern features. The boundary regions include supports to provide the mask with physical and thermal stability. The supports are formed by an etching step in which relatively large amounts of substrate are removed. In the methods, the mask pattern is formed, inspected, and "repaired" as required before performing the etching step that forms the supports. Thus, the forming, inspection, and repair steps can be performed before the mask is made too delicate.

Abstract: Charged-particle beam masks are disclosed that comprise a plurality of mask subfields separated by a plurality of boundary regions. The subfields are formed in a scattering layer deposited on a membrane. The membrane is supported by a support structure provided in proximity to the boundary regions. In one embodiment, the support structure comprises a plurality of support beams, parallel to each other, and preferably formed by anisotropically etching a silicon wafer. A boron-doped layer of the silicon wafer forms the membrane.

Abstract: A mask is proposed which restrains thermal deformation caused by irradiation by a charged particle beam and thereby increases the accuracy of pattern projection. In order to do this, in this mask for projection system using a charged particle beam according to the present invention, which has a mask base plate which is made from a semiconductor material and which is formed with holes which allow passage of the charged particle beam, at least a specified region around the periphery of the through holes of the mask base plate is covered with a layer of diamond. It is desirable further to cover this diamond layer with a layer of an electroconductive material, in order to prevent static charging up upon it.

Abstract: A scanning photoelectron microscope comprises a stage on which a sample is placed in a state in which gas around the sample is present, a light source emitting light of a wavelength capable of causing photoelectrons to be emitted from the sample, an optical system for condensing the light from the light source on the sample, scanning means for scanning the sample and the light relative to each other, and detecting means capable of applying positive potential to the sample, and detecting the photoelectrons created from the sample by the condensing, through the gas.

Abstract: A scanning photoelectron microscope comprises a stage on which a sample is placed in a state in which gas around the sample is present, a light source emitting light of a wavelength capable of causing photoelectrons to be emitted from the sample, an optical system for condensing the light from the light source on the sample, scanning means for scanning the sample and the light relative to each other, and detecting means capable of applying positive potential to the sample, and detecting the photoelectrons created from the sample by the condensing, through the gas.

Abstract: A scan type electron microscope has an electron beam generating source for generating an electron beam with which a sample is irradiated; a sample chamber, supplied with a gas for effecting a gas amplification, for housing the sample; a secondary electron detecting means, installed in the sample chamber, for detecting secondary electrons gas-amplified by the gas after being generated from the sample with the irradiation of the electron beam; and an electrode, disposed between the sample and the secondary electron detecting means, for absorbing positive ions produced when the secondary electrons are gasamplified by the gas. The electrode may be constituted by a further fine tube extended from a pressure limiting aperture to a position just above the sample and formed with a path of the electron beam. The absorption of the positive ions prevents a positive charge-up of the sample, whereby a voltage between the sample and the secondary electron detecting means can be kept at a fixed level.