Patents by Inventor Shintaro Kogura

Shintaro Kogura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200194250
    Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 18, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Masayoshi MINAMI, Akihito YOSHINO, Masaya NISHIDA, Naoko KITAGAWA, Shintaro KOGURA, Shogo OTANI
  • Patent number: 10287680
    Abstract: There is provided a technique that includes: forming a film on a substrate in a process chamber by performing: supplying a precursor gas to the substrate through a first nozzle; and supplying at least one selected from a group consisting of an oxygen-containing gas and a nitrogen-and-hydrogen-containing gas to the substrate through a second nozzle that is configured such that gas stagnation on a surface of the second nozzle caused by the second nozzle is less than gas stagnation on a surface of the first nozzle caused by the first nozzle, or such that contact of the second nozzle with gas staying on the surface of the second nozzle is less than contact of the first nozzle with gas staying on the surface of the first nozzle.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: May 14, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shintaro Kogura, Ryota Sasajima, Kosuke Takagi
  • Publication number: 20180363137
    Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.
    Type: Application
    Filed: August 22, 2018
    Publication date: December 20, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kosuke TAKAGI, Ryota SASAJIMA, Shintaro KOGURA, Naonori AKAE, Risa YAMAKOSHI, Toshiki FUJINO, Masato TERASAKI, Masanori MINAMI
  • Publication number: 20180305817
    Abstract: There is provided a technique that includes: forming a film on a substrate in a process chamber by performing: supplying a precursor gas to the substrate through a first nozzle; and supplying at least one selected from a group consisting of an oxygen-containing gas and a nitrogen-and-hydrogen-containing gas to the substrate through a second nozzle that is configured such that gas stagnation on a surface of the second nozzle caused by the second nozzle is less than gas stagnation on a surface of the first nozzle caused by the first nozzle, or such that contact of the second nozzle with gas staying on the surface of the second nozzle is less than contact of the first nozzle with gas staying on the surface of the first nozzle.
    Type: Application
    Filed: March 19, 2018
    Publication date: October 25, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shintaro KOGURA, Ryota SASAJIMA, Kosuke TAKAGI
  • Patent number: 10096463
    Abstract: A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port; supplying a first reactant from a second nozzle to the substrate and exhausting the first reactant from the exhaust port; and supplying a second reactant from a third nozzle to the substrate and exhausting the second reactant from the exhaust port. A substrate in-plane film thickness distribution of the film formed on the substrate is controlled by controlling a balance between a flow rate of an inert gas supplied from the second nozzle, a flow rate of an inert gas supplied from the third nozzle, and a flow rate of an inert gas supplied from the first nozzle in supplying the precursor.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: October 9, 2018
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yoshitomo Hashimoto, Tatsuru Matsuoka, Masaya Nagato, Ryota Horiike, Shintaro Kogura
  • Patent number: 10081868
    Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: September 25, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kosuke Takagi, Ryota Sasajima, Shintaro Kogura, Naonori Akae, Risa Yamakoshi, Toshiki Fujino, Masato Terasaki, Masayoshi Minami
  • Patent number: 10066294
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: September 4, 2018
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Ryota Sasajima, Shintaro Kogura, Masayoshi Minami
  • Patent number: 10036092
    Abstract: A Technique includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a precursor gas to the substrate, exhausting the precursor gas from the process chamber, supplying an oxygen-containing gas to the substrate, exhausting the oxygen-containing gas from the process chamber, supplying a hydrogen-containing gas to the substrate, and exhausting the hydrogen-containing gas from the process chamber. At least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than that in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than that in the act of exhausting the precursor gas.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: July 31, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shintaro Kogura, Ryota Sasajima
  • Publication number: 20180076017
    Abstract: A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port; supplying a first reactant from a second nozzle to the substrate and exhausting the first reactant from the exhaust port; and supplying a second reactant from a third nozzle to the substrate and exhausting the second reactant from the exhaust port. A substrate in-plane film thickness distribution of the film formed on the substrate is controlled by controlling a balance between a flow rate of an inert gas supplied from the second nozzle, a flow rate of an inert gas supplied from the third nozzle, and a flow rate of an inert gas supplied from the first nozzle in supplying the precursor.
    Type: Application
    Filed: September 11, 2017
    Publication date: March 15, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Tatsuru MATSUOKA, Masaya NAGATO, Ryota HORIIKE, Shintaro KOGURA
  • Publication number: 20170051408
    Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.
    Type: Application
    Filed: July 15, 2016
    Publication date: February 23, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Kosuke TAKAGI, Ryota SASAJIMA, Shintaro KOGURA, Naonori AKAE, Risa YAMAKOSHI, Toshiki FUJINO, Masato TERASAKI, Masayoshi MINAMI
  • Patent number: 9496134
    Abstract: Provided is a substrate processing apparatus capable of suppressing accumulation of reaction products or decomposed matters on an inner wall of a nozzle and suppressing scattering of foreign substances in a process chamber. The substrate processing apparatus includes a process chamber, a heating unit, a source gas supply unit, a source gas nozzle, an exhaust unit, and a control unit configured to control at least the heating unit, the source gas supply unit and the exhaust unit. The source gas nozzle is disposed at a region in the process chamber, in which a first process gas is not decomposed even under a temperature in the process chamber higher than a pyrolysis temperature of the first process gas, and the control unit supplies the first process gas into the process chamber two or more times at different flow velocities to prevent the first process gas from being mixed.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: November 15, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shinya Sasaki, Yuji Takebayashi, Shintaro Kogura
  • Publication number: 20160244875
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.
    Type: Application
    Filed: February 25, 2016
    Publication date: August 25, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryota SASAJIMA, Shintaro KOGURA, Masayoshi MINAMI
  • Patent number: 9340872
    Abstract: There is provided a cleaning method including cleaning an interior of a process chamber in which a substrate is processed, by supplying a cleaning gas into the process chamber and exhausting the cleaning gas from the process chamber via an exhaust pipe; and cooling the exhaust pipe by maintaining a state where distribution of the cleaning gas into the exhaust pipe is substantially stopped. Also, the act of cleaning the interior of the process chamber and the act of cooling the exhaust pipe are repeated alternately.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: May 17, 2016
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Shintaro Kogura, Ryota Sasajima
  • Publication number: 20160097126
    Abstract: A Technique includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a precursor gas to the substrate, exhausting the precursor gas from the process chamber, supplying an oxygen-containing gas to the substrate, exhausting the oxygen-containing gas from the process chamber, supplying a hydrogen-containing gas to the substrate, and exhausting the hydrogen-containing gas from the process chamber. At least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than that in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than that in the act of exhausting the precursor gas.
    Type: Application
    Filed: September 21, 2015
    Publication date: April 7, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shintaro KOGURA, Ryota SASAJIMA
  • Publication number: 20150376781
    Abstract: There is provided a cleaning method including cleaning an interior of a process chamber in which a substrate is processed, by supplying a cleaning gas into the process chamber and exhausting the cleaning gas from the process chamber via an exhaust pipe; and cooling the exhaust pipe by maintaining a state where distribution of the cleaning gas into the exhaust pipe is substantially stopped. Also, the act of cleaning the interior of the process chamber and the act of cooling the exhaust pipe are repeated alternately.
    Type: Application
    Filed: June 26, 2015
    Publication date: December 31, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shintaro KOGURA, Ryota SASAJIMA
  • Publication number: 20120280369
    Abstract: There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively.
    Type: Application
    Filed: December 15, 2010
    Publication date: November 8, 2012
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tatsuyuki Saito, Kazuhiro Yuasa, Yoshiro Hirose, Yuji Takebayashi, Ryota Sasajima, Katsuhiko Yamamoto, Hirohisa Yamazaki, Shintaro Kogura, Hirotaka Hamamura
  • Publication number: 20120119337
    Abstract: Provided is a substrate processing apparatus capable of suppressing accumulation of reaction products or decomposed matters on an inner wall of a nozzle and suppressing scattering of foreign substances in a process chamber. The substrate processing apparatus includes a process chamber, a heating unit, a source gas supply unit, a source gas nozzle, an exhaust unit, and a control unit configured to control at least the heating unit, the source gas supply unit and the exhaust unit. The source gas nozzle is disposed at a region in the process chamber, in which a first process gas is not decomposed even under a temperature in the process chamber higher than a pyrolysis temperature of the first process gas, and the control unit supplies the first process gas into the process chamber two or more times at different flow velocities to prevent the first process gas from being mixed.
    Type: Application
    Filed: November 4, 2011
    Publication date: May 17, 2012
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shinya Sasaki, Yuji Takebayashi, Shintaro Kogura
  • Publication number: 20100083898
    Abstract: There are provided an inner tube in which a substrate is stored; an outer tube surrounding the inner tube; a gas nozzle disposed in the inner tube; a gas ejection hole opened on the gas nozzle; a gas supply unit supplying gas into the inner tube through the gas nozzle; a gas exhausts hole opened on the side wall of the inner tube; and an exhaust unit exhausting a space between the outer tube and the inner tube and generating a gas flow in the inner tube toward the gas exhaust hole from the gas ejection hole, wherein the side wall of the inner tube is constituted, so that a distance between an outer edge of the substrate and the gas exhaust hole is set to be longer than a distance between the outer edge of the substrate and the gas ejection hole.
    Type: Application
    Filed: July 23, 2009
    Publication date: April 8, 2010
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Shintaro Kogura, Yuji Takebayashi, Atsuhiko Ashitani, Satoshi Okada
  • Patent number: D610559
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: February 23, 2010
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Satoshi Okada, Yuji Takebayashi, Tsutomu Kato, Atsuhiko Ashitani, Shintaro Kogura