Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an excitation electrode on the piezoelectric layer. A cavity portion is provided in the support and overlaps at least a portion of the excitation electrode. A portion of the piezoelectric layer that overlaps the cavity portion is a membrane portion. The membrane portion includes first and second directions orthogonal or substantially orthogonal to each other. The membrane portion includes a central portion in the center in the first direction, first and second portions facing each other across the central portion in the first direction, and an outer peripheral edge. At least a portion of the outer peripheral edge of the first and second portions of the membrane portion is located in an outer side portion in the second direction relative to the outer peripheral edge in the central portion.

Abstract: An acoustic wave device that includes a piezoelectric substrate that has a piezoelectric layer and a hollow portion, and first and second electrodes and. The piezoelectric layer has a first region that overlaps the first and second electrodes and the hollow portion in plan view, a second region that does not overlap the hollow portion and surrounds the first region in plan view, and a third region that overlaps the hollow portion and is located between the first region and the second region in plan view. A portion including the border between the first region and the third region of a cross-sectional shape in a lamination direction of the piezoelectric substrate includes a curved-surface shape.

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an IDT electrode on a first main surface of the piezoelectric layer, wherein the support includes an air gap portion opened on a piezoelectric layer side, the support includes an inner side wall facing the air gap portion, and a high thermal conductive film is directly or indirectly laminated on at least a portion of a second main surface of the piezoelectric layer and extends to the inner side wall of the support.

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an excitation electrode on the piezoelectric layer. A hollow portion is provided in the support and overlaps with at least a portion of the excitation electrode in plan view. The support includes a cavity opening on a side of the piezoelectric layer, and an inner wall surface connected to the cavity and facing the hollow portion. A functional film is provided on at least a portion of the inner wall surface and has an electromagnetic-wave absorption capacity in a wavelength range from about 0.2 µm to about 1.2 µm inclusive.

Abstract: An acoustic wave device includes a support substrate, a dielectric film, a piezoelectric layer, and an excitation electrode. The piezoelectric layer includes first and second main surfaces. The second main surface is on a side including the dielectric film. A cavity portion is provided in the dielectric film and overlaps at least a portion of the excitation electrode in plan view. The dielectric film includes a side wall surface facing the cavity portion and including an inclined portion inclined so that a width of the cavity portion decreases with increasing distance away from the piezoelectric layer. The inclined portion includes at least an end portion on a side including the piezoelectric layer, in the side wall surface. When an angle between the inclined portion and the second main surface of the piezoelectric layer is defined as an inclination angle ?, the inclination angle ? is from about 40° to about 80° inclusive.

Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device 11 according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles 3a coupled together as a light-absorbing layer 3, each of the semiconductor particles 3a including a group I-III-VI compound, each of the semiconductor particles 3a having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.

Abstract: The photoelectric conversion device includes a quantum dot accumulation zone, a base layer having current collecting properties which is disposed on at least one major surface of the quantum dot accumulation zone, and a plurality of columnar carrier collection zones, each extending from the base layer into the quantum dot accumulation zone and having an open end. Each of the carrier collection zones is composed mainly of metal oxide. An open end part has a higher mole ratio of oxygen to metal than a body part other than the open end part.

Abstract: There is provided a quantum dot solar cell having a high optical absorption coefficient. The quantum dot solar cell includes a quantum dot layer 3 including a plurality of quantum dots 1, wherein the quantum dot layer 3 includes a first quantum dot layer 3A having an index ?/x of 5% or more, wherein x is an average particle size, and ? is a standard deviation. The quantum dot layer 3 also includes a second quantum dot layer 3B that is provided on the light entrance surface 3b and/or the light exit surface 3c of the first quantum dot layer 3A and has an average particle size and an index ?/x smaller than those of the first quantum dot layer 3A.

Abstract: To prevent lowering of sensitivity of a flow cell based on total reflection of light at an outer face of a glass capillary at a joint part with a pipe, the flow cell includes, at joint parts with a pipe 605 to introduce solution to a glass capillary 601 and with a pipe to discharge solution from the capillary, an inorganic material layer 602 that reflects measurement light to modify the outer face of the glass capillary as well as a reinforcement layer 711 to modify the surface thereof.

Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device 11 according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles 3a coupled together as a light-absorbing layer 3, each of the semiconductor particles 3a including a group I-III-VI compound, each of the semiconductor particles 3a having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.

Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.

Abstract: A pipe connection joint which is repeatedly usable when an analysis column is replaced with another in a liquid chromatographic device. To this end, an elastic body is built into a compression screw for inserting a pipe passed through a ferrule into the analysis column to thereby axially movably support the pipe, and a pipe clamp is secured in advance at a predetermined position of the pipe. A distance between the ferrule and the pipe clamp changes on the basis of the length of a portion of the pipe sticking out from the ferrule and the pressing force of the elastic body applied to the pipe.

Abstract: The present invention provides a pipe connection joint which is repeatedly usable when an analysis column or the like is replaced with another in a liquid chromatographic device. To this end, an elastic body is built into a compression screw for inserting a pipe passed through a ferrule into the analysis column to thereby axially movably support the pipe, and a pipe clamp is secured in advance at a predetermined position of the pipe. A distance between the ferrule and the pipe clamp changes on the basis of the length of a portion of the pipe sticking out from the ferrule and the pressing force of the elastic body applied to the pipe. Consequently, in a liquid chromatographic device, a pipe connection joint for the analysis column or the like can be repeatedly used of plural times.

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Abstract: A photoelectric conversion device and a method for producing a photoelectric conversion device are disclosed. The photoelectric conversion device includes a light-absorbing layer. The light-absorbing layer contains a chalcopyrite-based compound, and has a peak intensity ratio IB/IA in a range of 3 to 9, where IA represents a peak intensity of the peak formed by combining a peak of a (220) plane and a peak of a (204) plane in X-ray diffraction, and IB represents a peak intensity of a (112) plane.

Abstract: To prevent lowering of sensitivity of a flow cell based on total reflection of light at an outer face of a glass capillary at a joint part with a pipe, the flow cell includes, at joint parts with a pipe 605 to introduce solution to a glass capillary 601 and with a pipe to discharge solution from the capillary, an inorganic material layer 602 that reflects measurement light to modify the outer face of the glass capillary as well as a reinforcement layer 711 to modify the surface thereof.

Abstract: A photoelectric converter is disclosed. The photoelectric converter includes a light-absorbing layer. The light-absorbing layer includes a plurality of crystalline grains. The grains contain a Group I-III-VI chalcopyrite compound semiconductor. The light-absorbing layer contains oxygen and an average atomic concentration of oxygen at grain boundaries of the light-absorbing layer is larger than the average atomic concentration of oxygen in the grains of the light-absorbing layer.

Abstract: The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.