Patents by Inventor Shintaro Miyanishi
Shintaro Miyanishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11657983Abstract: A solar battery cell, comprises a substrate; a first electrode provided on the substrate; a photoelectric conversion layer provided on the first electrode; a second electrode provided on the photoelectric conversion layer; and a barrier layer so provided as to cover a side portion of the photoelectric conversion layer, wherein the photoelectric conversion layer has an electron transport layer, a light absorption layer provided on the electron transport layer, and a hole transport layer provided on the light absorption layer, the light absorption layer includes a compound having a perovskite crystal structure, and the barrier layer is a dense inorganic material layer.Type: GrantFiled: August 16, 2021Date of Patent: May 23, 2023Assignee: SHARP KABUSHIKI KAISHAInventors: Shintaro Miyanishi, Hiroshi Sugimura
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Patent number: 11644763Abstract: The image forming apparatus includes a photoreceptor, a charger that charges a surface of the photoreceptor, an exposer that irradiates the charged surface of the photoreceptor with light to form an electrostatic latent image, a developer that develops the electrostatic latent image to form a toner image, a transferer that transfers the toner image onto a recording medium, a cleaner that removes residual toner on the surface of the photoreceptor, and an inductor. The photoreceptor includes a conductive substrate and a photoreceptive layer provided on the conductive substrate. The conductive substrate is connected to a ground via the inductor.Type: GrantFiled: July 1, 2021Date of Patent: May 9, 2023Assignee: SHARP KABUSHIKI KAISHAInventors: Takahiro Kurauchi, Shintaro Miyanishi, Norihide Momose
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Publication number: 20220102657Abstract: The photoelectric conversion element includes a surface electrode, a backside electrode, a light absorption layer disposed between the surface electrode and the backside electrode, and a hole transport layer disposed between the backside electrode and the light absorption layer. The light absorption layer contains a conical or elliptical conical crystal. The crystal has a perovskite layer containing a perovskite compound. The hole transport layer contains an inorganic material. A solar battery module includes a plurality of photoelectric conversion elements connected in series. The photoelectric conversion elements are the aforementioned photoelectric conversion element.Type: ApplicationFiled: September 22, 2021Publication date: March 31, 2022Inventors: SHINTARO MIYANISHI, Shinya UEGAKI, HIROSHI SUGIMURA
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Patent number: 11283034Abstract: A hybrid particle according to the present invention includes an inorganic core particle, an electron transport layer covering a surface of the inorganic core particle, and a light absorption layer covering the electron transport layer. The light absorption layer contains a compound having an organic-inorganic hybrid perovskite crystal structure or a metal complex. The compound or the metal complex is grown in a crystalline form on a surface of the electron transport layer.Type: GrantFiled: February 17, 2020Date of Patent: March 22, 2022Assignee: SHARP KABUSHIKI KAISHAInventors: Shintaro Miyanishi, Hiroshi Sugimura, Tatsuhiro Morita
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Publication number: 20220059295Abstract: A solar battery cell, comprises a substrate; a first electrode provided on the substrate; a photoelectric conversion layer provided on the first electrode; a second electrode provided on the photoelectric conversion layer; and a barrier layer so provided as to cover a side portion of the photoelectric conversion layer, wherein the photoelectric conversion layer has an electron transport layer, a light absorption layer provided on the electron transport layer, and a hole transport layer provided on the light absorption layer, the light absorption layer includes a compound having a perovskite crystal structure, and the barrier layer is a dense inorganic material layer.Type: ApplicationFiled: August 16, 2021Publication date: February 24, 2022Inventors: SHINTARO MIYANISHI, HIROSHI SUGIMURA
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Publication number: 20220019152Abstract: The image forming apparatus of the present invention includes a photoreceptor, a charger that charges a surface of the photoreceptor, an exposer that irradiates the charged surface of the photoreceptor with light to form an electrostatic latent image, a developer that develops the electrostatic latent image to form a toner image, a transferer that transfers the toner image onto a recording medium, a cleaner that removes residual toner on the surface of the photoreceptor, and an inductor. The photoreceptor includes a conductive substrate and a photoreceptive layer provided on the conductive substrate. The conductive substrate is connected to a ground via the inductor.Type: ApplicationFiled: July 1, 2021Publication date: January 20, 2022Inventors: TAKAHIRO KURAUCHI, Shintaro MIYANISHI, Norihide MOMOSE
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Publication number: 20210257570Abstract: The photoelectric conversion element includes an electron transport layer, a hole transport layer, and a light absorption layer arranged between the electron transport layer and the hole transport layer. The light absorption layer contains a perovskite compound having an acicular crystal structure. The hole transport layer contains a carbon nanotube and a polyvinyl butyral resin. A degree of butyralization of the polyvinyl butyral resin is preferably equal to or more than 60 mol % and equal to or less than 80 mol %.Type: ApplicationFiled: January 29, 2021Publication date: August 19, 2021Inventors: HIROSHI SUGIMURA, SHINTARO MIYANISHI
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Publication number: 20210233718Abstract: In an organic/inorganic hybrid photoelectric conversion element, a photoconductor layer including an organic photoconductor material is formed on a laminated film in which a conductive film having translucency and a first titanium oxide layer/a titanium nitride layer are formed in this order on a substrate.Type: ApplicationFiled: January 14, 2021Publication date: July 29, 2021Inventors: SHINTARO MIYANISHI, HIROSHI SUGIMURA
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Patent number: 10886072Abstract: A method for producing a photoelectric conversion element includes forming a hole transport layer containing a hole transport material by causing the hole transport material to adhere to one of a light-absorbing layer and a conductive layer; melting the hole transport layer by heating the hole transport layer to a temperature that is higher than or equal to a melting point of the hole transport material and is in a range of 120° C. or higher and 170° C. or lower; and bonding the light-absorbing layer and the conductive layer with the hole transport layer disposed therebetween by performing cooling while bringing the other of the light-absorbing layer and the conductive layer into contact with the melted hole transport layer under pressure. The light-absorbing layer contains a compound represented by general formula (1), where A represents an organic molecule, B represents a metal atom, and X represents a halogen atom.Type: GrantFiled: May 8, 2019Date of Patent: January 5, 2021Assignee: SHARP KABUSHIKI KAISHAInventors: Hiroshi Sugimura, Shintaro Miyanishi
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Publication number: 20200312574Abstract: A photoelectric conversion element includes an electron transport layer, a hole transport layer, and a light absorption layer disposed between the electron transport layer and the hole transport layer. The light absorption layer includes a perovskite compound having a needle-like crystal structure, and a binder resin. The binder resin preferably contains a polyvinyl butyral resin or a cellulose resin.Type: ApplicationFiled: March 6, 2020Publication date: October 1, 2020Inventors: HIROSHI SUGIMURA, SHINTARO MIYANISHI, TAKAHIRO KURAUCHI
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Publication number: 20200287149Abstract: A hybrid particle according to the present invention includes an inorganic core particle, an electron transport layer covering a surface of the inorganic core particle, and a light absorption layer covering the electron transport layer. The light absorption layer contains a compound having an organic-inorganic hybrid perovskite crystal structure or a metal complex. The compound or the metal complex is grown in a crystalline form on a surface of the electron transport layer.Type: ApplicationFiled: February 17, 2020Publication date: September 10, 2020Applicant: SHARP KABUSHIKI KAISHAInventors: SHINTARO MIYANISHI, HIROSHI SUGIMURA, TATSUHIRO MORITA
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Publication number: 20190348226Abstract: A method for producing a photoelectric conversion element includes forming a hole transport layer containing a hole transport material by causing the hole transport material to adhere to one of a light-absorbing layer and a conductive layer; melting the hole transport layer by heating the hole transport layer to a temperature that is higher than or equal to a melting point of the hole transport material and is in a range of 120° C. or higher and 170° C. or lower; and bonding the light-absorbing layer and the conductive layer with the hole transport layer disposed therebetween by performing cooling while bringing the other of the light-absorbing layer and the conductive layer into contact with the melted hole transport layer under pressure. The light-absorbing layer contains a compound represented by general formula (1), where A represents an organic molecule, B represents a metal atom, and X represents a halogen atom.Type: ApplicationFiled: May 8, 2019Publication date: November 14, 2019Inventors: HIROSHI SUGIMURA, SHINTARO MIYANISHI
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Patent number: 9324891Abstract: A solar cell (1) of the present invention includes a photoelectric conversion layer (2) and a photonic crystal provided inside the photoelectric conversion layer (2) in order to have a photonic band gap. The photonic crystal has defects (31) in order to provide a defect level in the photonic band gap. QV which is a Q value representing a magnitude of a resonance effect yielded by coupling between the photonic crystal and an outside is substantially equal to Q? which is a Q value representing a magnitude of a resonance effect yielded by a medium of the photoelectric conversion layer (2).Type: GrantFiled: December 22, 2010Date of Patent: April 26, 2016Assignees: Sharp Kabushiki Kaisha, Kyoto UniversityInventors: Hiroaki Shigeta, Yuhji Yashiro, Yuhsuke Tsuda, Shintaro Miyanishi, Susumu Noda, Masayuki Fujita, Yoshinori Tanaka
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Patent number: 8331057Abstract: Examples of an electromagnetic field detecting element according to the present invention includes a substrate, a pair of electrodes, three insulation layers disposed on the substrate and between the electrodes. The three insulation layers are designed to have two or three different dielectric breakdown strength. At least two ballistic current paths are formed between the electrodes. With this structure, it is possible to perform at a room temperature a highly efficient electromagnetic field detection utilizing Aharonov-Bohm effect or Aharonov-Casher effect.Type: GrantFiled: September 25, 2006Date of Patent: December 11, 2012Assignee: Sharp Kabushiki KaishaInventors: Shintaro Miyanishi, Yasushi Ogimoto, Yoshiteru Murakami, Kunio Kojima
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Publication number: 20120279553Abstract: A solar cell (1) of the present invention includes a photoelectric conversion layer (2) and a photonic crystal provided inside the photoelectric conversion layer (2) in order to have a photonic band gap. The photonic crystal has defects (31) in order to provide a defect level in the photonic band gap. QV which is a Q value representing a magnitude of a resonance effect yielded by coupling between the photonic crystal and an outside is substantially equal to Q? which is a Q value representing a magnitude of a resonance effect yielded by a medium of the photoelectric conversion layer (2).Type: ApplicationFiled: December 22, 2010Publication date: November 8, 2012Applicants: Kyoto University, Sharp Kabushiki KaishaInventors: Hiroaki Shigeta, Yuhji Yashiro, Yuhsuke Tsuda, Shintaro Miyanishi, Susumu Noda, Masayuki Fujita, Yoshinori Tanaka
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Patent number: 8208214Abstract: A magnetic sensing section is constituted by a magneto-resistive device in which a fixed magnetization layer, a non-magnetic layer, and a magnetization-free layer are deposited in that order on a first buffer layer that is deposited on a magnetic layer. A second buffer layer sandwiches the magnetic sensing section, and a biasing layer which covers right and left sides of the magnetic sensing section. The second buffer layer is deposited on the magnetic layer with a nonconductor layer interposed therebetween. A near field light generation section constituted by a second magnetic layer, a dielectric layer, and a metal layer is formed on a surface of the second buffer layer not adjacent to the nonconductor layer. The resultant magnetic sensor device can efficiently perform photo-assisted reproduction of information from a magnetic recording medium using a magnetic reproduction head or a magnetic reproducer.Type: GrantFiled: March 27, 2007Date of Patent: June 26, 2012Assignee: Sharp Kabushiki KaishaInventors: Noboru Iwata, Shintaro Miyanishi, Tomoki Ono, Yoshiteru Murakami
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Patent number: 8045294Abstract: An opening (3) is formed on a surface of a metal film (2), a plurality of axes (4, 5, 6, 7) cross each other substantially perpendicularly at the opening (3), a plurality of periodic grooves (8, 9, 10, 11) are provided for respective axes (4, 5, 6, 7), and each of the periodic grooves (8, 9, 10, 11) includes a plurality of grooves (8-n, 9-n, 10-n, and 11-n) substantially perpendicular to the axis for which each periodic groove is provided, and the periodic grooves (8, 9, 10, 11) is positioned point-symmetrically with respect to the opening (3).Type: GrantFiled: July 3, 2007Date of Patent: October 25, 2011Assignee: Sharp Kabushiki KaishaInventors: Tomoki Ono, Shintaro Miyanishi, Kousuke Innami, Yoshiteru Murakami
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Publication number: 20100091410Abstract: A magnetic read/write head includes: a slider having an ABS, a surface at an leading edge, and a surface at an trailing edge; a piezoelectric device arranged on the surface at the trailing edge of the slider; and a magnetic read/write element arranged on the piezoelectric device. The piezoelectric device, upon application of voltage, is displaced asymmetrically with respect to a displacement axis which is on the surface at the trailing edge of the slider and which is perpendicular to the surface of the magnetic recording medium. With this asymmetrical displacement of the piezoelectric device, the magnetic read/write element rotates about the rotation axis perpendicular to the surface of the magnetic recording medium.Type: ApplicationFiled: October 8, 2009Publication date: April 15, 2010Applicant: Sharp Kabushiki KaishaInventors: Kousuke Innami, Shintaro Miyanishi
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Patent number: 7690009Abstract: An electromagnetic field generating element restrains magnetic field attenuation or magnetic field delay in a high frequency recording/reproducing head for thermally assisted magnetic field recording/reproduction using a near field. An information recording/reproducing head and an information recording/reproducing apparatus carry out high frequency magnetic recording/reproduction. The electromagnetic field generating element includes: (i) a substrate, (ii) conductors each provided on the substrate and each serving as a supporting section, (iii) a plate-like-shaped conductor provided on the conductors and (iv) a semiconductor laser element provided on the substrate. The semiconductor laser element irradiates laser light to the plate-like-shaped conductor substantially parallel to an extending flat surface of the plate-like-shaped conductor. This causes generation of a near field in the plate-like-shaped conductor.Type: GrantFiled: December 12, 2008Date of Patent: March 30, 2010Assignee: Sharp Kabushiki KaishaInventors: Shintaro Miyanishi, Naoyasu Iketani, Kunio Kojima
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Publication number: 20090296258Abstract: An electromagnetic field detecting element 10 includes a lamination of three insulation layers 2, 3, and 4. The dielectric breakdown strength of the insulation layer 3 is greater than the dielectric breakdown strengths of insulation layers 2 and 4. The three insulation layers 2, 3, and 4 are disposed between a pair of electrodes 5 and 6. Boundaries 7 and 8 on both ends of an overlapping region of the opposing surfaces 5a and 6a in a Z direction are apart from the insulation layer 3 by thicknesses t1 and t3 of the insulation layers 2 and 4, respectively. Between the pair of electrodes 5 and 6, ballistic current paths interposing therebetween the insulation layer 3 are formed by applying, between the pair of electrodes 5 and 6, an electric field having a magnitude which causes dielectric breakdown in the insulation layers 2 and 4 while causing no dielectric breakdown in the insulation layer 3.Type: ApplicationFiled: September 25, 2006Publication date: December 3, 2009Applicant: SHARP KABUSHIKI KAISHAInventors: Shintaro Miyanishi, Yasushi Ogimoto, Yoshiteru Murakami, Kunio Kojima