Abstract: A charge transfer path of a transfer transistor constituted by a vertical transistor is reduced. An imaging element includes a photoelectric conversion unit, a charge holding unit, a charge transfer unit, and an image signal generation unit. The photoelectric conversion unit is disposed on a semiconductor substrate and generates charge corresponding to incident light by photoelectric conversion. The charge holding unit holds the charge. The charge transfer unit includes an opening portion, which is formed in the semiconductor substrate and having a polygonal shape in a plan view, and an embedded gate disposed in the opening portion and transfers the charge from the photoelectric conversion unit to the charge holding unit. The image signal generation unit generates an image signal based on the held charge.

Abstract: According to the embodiments, a manufacturing method for a semiconductor device includes forming recessed parts on a surface of a semiconductor layer. The manufacturing method for the semiconductor device includes a process for forming a buffer layer, which has a melting point lower than that of the semiconductor layer, on a surface of the recessed part on the surface of the semiconductor layer. The manufacturing method for the semiconductor device includes a process for forming a high-melting point film, which has the melting point higher than that of the semiconductor layer, on the buffer layer and fills the recessed part with the high-melting point film. The manufacturing method for the semiconductor device includes a process for heating the semiconductor layer having the buffer layer and the high-melting point film formed thereon at a temperature equal to or higher than the melting point of the buffer layer.

Abstract: A solid-state imaging device includes a plurality of photoelectric transducers disposed in an array in a semiconductor layer. Each photoelectric transducer includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first and second regions are in direct contact. An isolation region is between each adjacent pair of photoelectric transducers. The isolation region includes an insulating material extending from a surface of the semiconductor layer and a third semiconductor region of the first conductivity type surrounding the insulating material. The third semiconductor region is between the insulating material and the first semiconductor region, and the first semiconductor region is between the second and third semiconductor regions.

Abstract: A heating device is provided according to an embodiment. The heating device comprises a heater, a temperature detecting part, a wafer warpage detecting part and a controlling part. The heater heats a wafer. The temperature detecting part detects a temperature of the wafer. The wafer warpage detecting part detects warpage of the wafer. The controlling part controls the heater based on a detection result of the wafer warpage detecting part before controlling the heater based on a detection result of the temperature detecting part.