Patents by Inventor Shintaro Suehiro

Shintaro Suehiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device
    Patent number: 6100193
    Abstract: A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.
    Type: Grant
    Filed: September 24, 1997
    Date of Patent: August 8, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shintaro Suehiro, Yasushi Akasaka, Kyoichi Suguro, Kazuaki Nakajima, Tadashi Iijima
  • Semiconductor device wiring or electrode
    Patent number: 5719410
    Abstract: A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.
    Type: Grant
    Filed: December 16, 1996
    Date of Patent: February 17, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shintaro Suehiro, Yasushi Akasaka, Kyoichi Suguro, Kazuaki Nakajima, Tadashi Iijima