Patents by Inventor Shintaro Yoshii

Shintaro Yoshii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4990459
    Abstract: A drop which is hydrophobic to the surface of an object to be measured is dropped on the surface of the object and moved so as to be brought into contact with the overall surface of the object to be measured. After the movement, the drop is recovered and analyzed by chemical analysis to measure the kind of element and content of an impurity adsorbed on the surface of the object to be measured.
    Type: Grant
    Filed: April 18, 1989
    Date of Patent: February 5, 1991
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ayako Maeda, Mokuji Kageyama, Shintaro Yoshii, Masanobu Ogino
  • Patent number: 4980300
    Abstract: When a surface of semiconductor wafer is treated for gettering, ultrasonic waves are caused to propagate along the surface of the semiconductor wafer, through pure water. Mechanical damages are formed on the surface of the semiconductor wafer along which the ultrasonic waves propagated, the damages serving as a back side damage.
    Type: Grant
    Filed: November 25, 1988
    Date of Patent: December 25, 1990
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Moriya Miyashita, Shintaro Yoshii, Keiko Sakuma
  • Patent number: 4837610
    Abstract: A semiconductor device is provided having as an insulating oxide film a silicon oxide film containing a metal, such as iron or chromium, of an average concentration of 1.times.10.sup.16 atoms/cm.sup.3 to 1.times.10.sup.19 atoms/cm.sup.3 which can be readily trapped therein.
    Type: Grant
    Filed: January 22, 1988
    Date of Patent: June 6, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hachiro Hiratsuka, Yoshiaki Matsushita, Shintaro Yoshii