Patents by Inventor Shintarou Hirata
Shintarou Hirata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145517Abstract: Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film.Type: ApplicationFiled: December 19, 2023Publication date: May 2, 2024Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenichi MURATA, Masahiro JOEI, Fumihiko KOGA, Iwao YAGI, Shintarou HIRATA, Hideaki TOGASHI, Yosuke SAITO, Shingo TAKAHASHI
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Patent number: 11974444Abstract: There is provided a solid-state image sensor, a solid-state imaging device, an electronic apparatus, and a method of manufacturing a solid-state image sensor capable of improving characteristics. There is provided a solid-state image sensor including a stacked structure that includes a semiconductor substrate, a first photoelectric converter provided above the semiconductor substrate and converting light into charges, and a second photoelectric converter provided above the first photoelectric converter and converting light into charges, where the first photoelectric converter and the second photoelectric converter include a photoelectric conversion stacked structure in which a common electrode, a photoelectric conversion film, and a readout electrode are stacked so that the first photoelectric converter and the second photoelectric converter are in a line-symmetrical relationship with each other with a vertical plane perpendicular to a stacking direction of the stacked structure as an axis of symmetry.Type: GrantFiled: June 11, 2019Date of Patent: April 30, 2024Assignees: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hideaki Togashi, Iwao Yagi, Masahiro Joei, Fumihiko Koga, Kenichi Murata, Shintarou Hirata, Yosuke Saito, Akira Furukawa
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Patent number: 11910624Abstract: A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.Type: GrantFiled: December 15, 2022Date of Patent: February 20, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Shintarou Hirata, Hideaki Togashi, Yukio Kaneda
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Publication number: 20240055465Abstract: A highly functional photoelectric conversion element is provided.Type: ApplicationFiled: December 14, 2021Publication date: February 15, 2024Inventors: Kenichi MURATA, Masahiro JOEI, Shintarou HIRATA, Shingo TAKAHASHI, Yoshiyuki OHBA, Takashi KOJIMA, Tomiyuki YUKAWA, Yoshifumi ZAIZEN, Tomohiro SUGIYAMA, Masaki OKAMOTO, Takuya MASUNAGA, Yuki KAWAHARA
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Patent number: 11888012Abstract: Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film.Type: GrantFiled: July 25, 2019Date of Patent: January 30, 2024Assignees: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenichi Murata, Masahiro Joei, Fumihiko Koga, Iwao Yagi, Shintarou Hirata, Hideaki Togashi, Yosuke Saito, Shingo Takahashi
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Publication number: 20240030251Abstract: A solid-state imaging element (1) according to the present disclosure includes a pixel array section (3), an isolation region (10), and a light shielding section. In the pixel array section (3), a plurality of light receiving pixels (2) each including a photoelectric conversion layer (17) made of an organic material and a charge storage layer (23) that stores a charge generated in the photoelectric conversion layer (17) is disposed side by side. The isolation region (10) is provided between the light receiving pixels (2) adjacent to each other in the pixel array section (3). The light shielding section suppresses incidence of light on the charge storage layer (23a) located in the isolation region (10).Type: ApplicationFiled: September 2, 2021Publication date: January 25, 2024Inventors: SHINTAROU HIRATA, TOSHIHIKO HAYASHI
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Publication number: 20240006426Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.Type: ApplicationFiled: September 19, 2023Publication date: January 4, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hideaki TOGASHI, Tetsuji YAMAGUCHI, Nobuhiro KAWAI, Koji SEKIGUCHI, Masahiro JOEI, Kenichi MURATA, Shintarou HIRATA, Yuta HASEGAWA, Yoshito NAGASHIMA
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Patent number: 11817466Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.Type: GrantFiled: June 17, 2020Date of Patent: November 14, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Hideaki Togashi, Tetsuji Yamaguchi, Nobuhiro Kawai, Koji Sekiguchi, Masahiro Joei, Kenichi Murata, Shintarou Hirata, Yuta Hasegawa, Yoshito Nagashima
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Publication number: 20230354627Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.Type: ApplicationFiled: July 5, 2023Publication date: November 2, 2023Applicant: SONY GROUP CORPORATIONInventors: Yasuharu UJIIE, Masakazu MUROYAMA, Masashi BANDO, Masaki MURATA, Hideyuki KUMITA, Sachiko SAKAIGAWA, Shintarou HIRATA, Yuya KUMAGAI, Yu KATO
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Publication number: 20230345742Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.Type: ApplicationFiled: June 29, 2023Publication date: October 26, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshihiko HAYASHI, Masahiro JOEI, Kenichi MURATA, Shintarou HIRATA
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Publication number: 20230343807Abstract: A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.Type: ApplicationFiled: April 3, 2023Publication date: October 26, 2023Inventors: Nobuhiro KAWAI, Hideaki TOGASHI, Fumihiko KOGA, Tetsuji YAMAGUCHI, Shintarou HIRATA, Taiichiro WATANABE, Yoshihiro ANDO
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Publication number: 20230329017Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and- an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.Type: ApplicationFiled: May 3, 2023Publication date: October 12, 2023Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yohei HIROSE, Iwao YAGI, Shintarou HIRATA, Hideaki MOGI, Masashi BANDO, Osamu ENOKI
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Patent number: 11778840Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.Type: GrantFiled: August 31, 2022Date of Patent: October 3, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshihiko Hayashi, Masahiro Joei, Kenichi Murata, Shintarou Hirata
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Patent number: 11778841Abstract: To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element (100) including at least a first electrode (101), a work function control layer (108), a photoelectric conversion layer (102), an oxide semiconductor layer (104), and a second electrode (107) in this order, and further including a third electrode (105), in which the third electrode (105) is provided apart from the second electrode (107) and is provided facing the photoelectric conversion layer (102) via an insulating layer (106), and the work function control layer (108) contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.Type: GrantFiled: July 30, 2019Date of Patent: October 3, 2023Assignees: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shintarou Hirata, Masahiro Joei, Kenichi Murata, Masashi Bando, Yosuke Saito, Ryosuke Suzuki
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Publication number: 20230269953Abstract: An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.Type: ApplicationFiled: March 17, 2023Publication date: August 24, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masahiro JOEI, Kenichi MURATA, Shintarou HIRATA, Toshihiko HAYASHI
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Publication number: 20230262998Abstract: There is provided an imaging device and an electronic apparatus including an imaging device, where the imaging device includes: a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material, where the second organic semiconductor material comprises a subphthalocyanine material, and where the second organic semiconductor material has a highest occupied molecular orbital level ranging from ?6 eV to ?6.7 eV.Type: ApplicationFiled: February 7, 2023Publication date: August 17, 2023Applicant: Sony Group CorporationInventors: Yuta HASEGAWA, Masashi BANDO, Shintarou HIRATA, Hideaki MOGI, Iwao YAGI, Yasuharu UJIIE, Yuki NEGISHI
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Patent number: 11730004Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.Type: GrantFiled: September 17, 2021Date of Patent: August 15, 2023Assignees: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yohei Hirose, Iwao Yagi, Shintarou Hirata, Hideaki Mogi, Masashi Bando, Osamu Enoki
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Publication number: 20230215880Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.Type: ApplicationFiled: March 24, 2021Publication date: July 6, 2023Inventors: Masahiro JOEI, Shintarou HIRATA, Tomiyuki YUKAWA, Ryosuke SUZUKI, Hiroshi NAKANO, Toshihiko HAYASHI, Ryotaro TAKAGUCHI, Iwao YAGI, Kenichi MURATA
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Patent number: 11641750Abstract: An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.Type: GrantFiled: July 3, 2019Date of Patent: May 2, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Masahiro Joei, Kenichi Murata, Shintarou Hirata, Toshihiko Hayashi
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Publication number: 20230124165Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The photoelectric conversion layer includes an organic material. The semiconductor layer includes a first layer and a second layer that are stacked in order from the first electrode and second electrode side between the first electrode and second electrode and the photoelectric conversion layer. The first layer has a larger value for C5s indicating a contribution ratio of a 5 s orbital to a conduction band minimum than a value of the second layer for C5s.Type: ApplicationFiled: March 24, 2021Publication date: April 20, 2023Inventors: Hiroshi NAKANO, Shintarou HIRATA, Masakazu MUROYAMA, Yusuke YAMAZAKI, Toshiki MORIWAKI, Yoichiro IINO, Kazunori KURISHIMA, Yosuke MURAKAMI