Patents by Inventor Shinto ICHIKAWA
Shinto ICHIKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230157183Abstract: A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.Type: ApplicationFiled: January 13, 2023Publication date: May 18, 2023Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Katsuyuki NAKADA
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Publication number: 20230144429Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer. The nonmagnetic layer includes a first region and a second region in a plane. Both of the first region and the second region are formed of a metal. The second region is different in constituent material from the first region. The second region has a crystal structure of a body-centered cubic lattice structure (bcc).Type: ApplicationFiled: November 4, 2022Publication date: May 11, 2023Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Katsuyuki NAKADA, Kazuumi INUBUSHI
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Patent number: 11621392Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.Type: GrantFiled: September 21, 2021Date of Patent: April 4, 2023Assignee: TDK CORPORATIONInventors: Shinto Ichikawa, Kazuumi Inubushi, Katsuyuki Nakada
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Patent number: 11594674Abstract: A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.Type: GrantFiled: March 18, 2020Date of Patent: February 28, 2023Assignee: TDK CORPORATIONInventors: Shinto Ichikawa, Katsuyuki Nakada
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Magnetoresistive effect element containing two non-magnetic layers with different crystal structures
Patent number: 11585873Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant ? of the first layer and a lattice constant ? of the second layer satisfy a relationship of ??0.04×??2×???+0.04×?.Type: GrantFiled: July 8, 2021Date of Patent: February 21, 2023Assignees: TDK CORPORATION, NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Shinto Ichikawa, Katsuyuki Nakada, Hiroaki Sukegawa, Seiji Mitani, Tadakatsu Ohkubo, Kazuhiro Hono -
Publication number: 20230025589Abstract: A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1), Ru?X1-???(1) where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol ? represents a number satisfying 0.5<?<1, the first ferromagnetic layer contains a Heusler alloy, and the second ferromagnetic layer contains a Heusler alloy.Type: ApplicationFiled: July 6, 2022Publication date: January 26, 2023Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Shinto ICHIKAWA
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MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS WITH DIFFERENT CRYSTAL STRUCTURES
Publication number: 20230009284Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant ? of the first layer and a lattice constant ? of the second layer satisfy a relationship of ??0.04×??2×???+0.04 ×?.Type: ApplicationFiled: July 8, 2021Publication date: January 12, 2023Applicants: TDK CORPORATION, NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Shinto ICHIKAWA, Katsuyuki NAKADA, Hiroaki SUKEGAWA, Seiji MITANI, Tadakatsu OHKUBO, Kazuhiro HONO -
Patent number: 11525873Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.Type: GrantFiled: February 2, 2021Date of Patent: December 13, 2022Assignee: TDK CORPORATIONInventors: Shinto Ichikawa, Kazuumi Inubushi, Katsuyuki Nakada
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Publication number: 20220278271Abstract: In the magnetoresistance effect element according to one aspect, the metal oxide constituting the metal oxide layer has the ratio of oxygen higher than the total ratio of metal when the composition is expressed in the stoichiometric composition; and the resistivity of the metal oxide layer is higher than that of the tunnel barrier layer.Type: ApplicationFiled: June 24, 2020Publication date: September 1, 2022Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Tsuyoshi SUZUKI, Katsuyuki NAKADA, Tomoyuki SASAKI
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Publication number: 20220278272Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.Type: ApplicationFiled: May 17, 2022Publication date: September 1, 2022Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Katsuyuki NAKADA, Tomoyuki SASAKI
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Patent number: 11362270Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.Type: GrantFiled: October 1, 2020Date of Patent: June 14, 2022Assignee: TDK CORPORATIONInventors: Shinto Ichikawa, Katsuyuki Nakada, Tomoyuki Sasaki
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Publication number: 20220006007Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.Type: ApplicationFiled: September 21, 2021Publication date: January 6, 2022Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Patent number: 11158785Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.Type: GrantFiled: December 22, 2020Date of Patent: October 26, 2021Assignee: TDK CORPORATIONInventors: Shinto Ichikawa, Kazuumi Inubushi, Katsuyuki Nakada
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Publication number: 20210318394Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an insertion layer that is disposed at least one of a position between the first ferromagnetic layer and the nonmagnetic layer and a position between the second ferromagnetic layer and the nonmagnetic layer, in which the nonmagnetic layer is composed of an oxide containing Mg and Ga, and the insertion layer is a ferromagnetic component containing Ga.Type: ApplicationFiled: March 8, 2021Publication date: October 14, 2021Applicant: TDK CORPORATIONInventors: Shogo Yonemura, Tomoyuki Sasaki, Shinto Ichikawa
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Publication number: 20210304940Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, wherein a crystal structure of the non-magnetic layer is a spinel structure, wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W.Type: ApplicationFiled: March 26, 2021Publication date: September 30, 2021Applicant: TDK CORPORATIONInventors: Tsuyoshi SUZUKI, Shinto ICHIKAWA, Katsuyuki NAKADA
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Publication number: 20210286028Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.Type: ApplicationFiled: February 2, 2021Publication date: September 16, 2021Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Publication number: 20210265562Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.Type: ApplicationFiled: December 9, 2020Publication date: August 26, 2021Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Patent number: 11069852Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more high-barrier-height layers and one or more low-barrier-height layers, the one or more high-barrier-height layers having a relatively high barrier height with respect to the one or more low-barrier-height layers and the one or more low-barrier-height layers having a relatively low barrier height with respect to the one or more high-barrier-height layers. A minimum difference of barrier height between the one or more high-barrier-height layers and the one or more low-barrier-height layers is equal to or higher than 0.5 eV.Type: GrantFiled: July 8, 2019Date of Patent: July 20, 2021Assignee: TDK CORPORATIONInventors: Shinto Ichikawa, Katsuyuki Nakada, Tomoyuki Sasaki
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Publication number: 20210193913Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.Type: ApplicationFiled: December 22, 2020Publication date: June 24, 2021Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Publication number: 20210184103Abstract: The magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy layer including a crystal region and an amorphous region.Type: ApplicationFiled: December 8, 2020Publication date: June 17, 2021Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Shinto ICHIKAWA