Abstract: An epitaxial growth furnace is provided for effecting the formation of an epitaxial layer on the surface of a semiconductor wafer by CVD in a reaction chamber of the furnace. The furnace comprises a wafer holder having an opening for exposing a surface area of the wafer which is subject to epitaxial growth, an opening flange adapted for engagement with a chamfered tapered face of a whole peripheral edge of the wafer on the side of said surface area thereof, and a plurality of jaws for detachably engaging with an outer periphery of the wafer on a back surface side of said surface area.

Abstract: Disclosed is a compact apparatus for manufacturing semiconductor wafers, which is aimed at complete removing of moisture from the wafers after final cleaning while reducing the manufacturing time. The apparatus includes a cleaning chamber (1) for final cleaning, a storage chamber (3) for storing wafers, a transfer chamber (2) communicating with the both cleaning and storage chambers (1, 3), and formed in its upper wall with a heat-conducting window (7), a robot hand (5) and a robot arm (4) for transporting the wafer (W) from the cleaning chamber (1) to the storage chamber (3) within the transfer chamber, infrared lamps (6) arranged to face the window (7) outside the transfer chamber (2) so as to heat the wafer (W) in the course of transportation within the transfer chamber, gas supply ports (8) for producing a laminar flow of inert gas from the storage chamber (3) to the cleaning chamber (1) to expose wafers (W) with the gas, and exhaust ports (9) for exhausting the moisture removed from wafers.