Abstract: A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process.

Abstract: An organic electronic device includes an active region polarity definition layer, and a bulk heterojunction active layer formed on the active region polarity definition layer. The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities.

Abstract: An organic electronic device includes an active region polarity definition layer, and a bulk heterojunction active layer formed on the active region polarity definition layer. The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities.

Abstract: A light emitting device may include a first electrode on a substrate, a first emission layer on the first electrode, a buffer layer on the first emission layer, a middle electrode on the buffer layer, a second emission layer on the middle electrode, and a second electrode on the second emission layer. The buffer layer may include a material selected from the group consisting of a metal oxide, a polyelectrolyte, and a combination thereof. The first emission layer, buffer layer, middle electrode, and second emission layer may be fabricated using a wet process.

Abstract: Disclosed herein is a multi-layered bipolar field-effect transistor, including a gate electrode, a gate insulating layer, an electron transport layer, a hole transport layer, a source electrode, and a drain electrode, in which an intermediate separating layer is formed between the electron transport layer and the hole transport layer, and a method of manufacturing the same. The multi-layered bipolar field-effect transistor has advantages in that, since a P-channel and a N-channel are effectively separated, the electrical properties thereof, such as current ON/OFF ratio, electron mobility, hole mobility, and the like, are improved, and, since a device can be manufactured through a solution process without damaging layers, the processability thereof is improved.