Abstract: A floor structure of an electric vehicle floor structure includes a battery unit and an underfloor panel. The battery unit is arranged underneath a floor of a passenger compartment between front wheels and rear wheels. The underfloor panel covers an entire bottom surface of the battery unit from below. The underfloor panel is provided with a center panel and a surrounding panel. The center panel has a noise absorption material that arranged at a lateral-direction center and a longitudinal-direction center of the underfloor panel. The surrounding panel has a high-strength material arranged around the center panel.

Abstract: There are provided a battery frame that is attached to a structural member on a floor back of an automobile body and accommodates a battery, and a rear suspension member assembly that is attached to rear floor side members and supports a rear suspension. The rear suspension member assembly is attached to the rear floor side members at least at right and left front-side attachment parts and right and left rear-side attachment parts. The rear suspension member assembly is attached to the battery frame at a first attachment part that is closer to a vehicle front than the right and left front-side attachment parts.

Abstract: A floor structure of an electric vehicle floor structure includes a battery unit and an underfloor panel. The battery unit is arranged underneath a floor of a passenger compartment between front wheels and rear wheels. The underfloor panel covers an entire bottom surface of the battery unit from below. The underfloor panel is provided with a center panel and a surrounding panel. The center panel has a noise absorption material that arranged at a lateral-direction center and a longitudinal-direction center of the underfloor panel. The surrounding panel has a high-strength material arranged around the center panel.

Abstract: A method of manufacturing an LED according to an embodiment of the present invention includes: back-grinding a substrate of an LED wafer including the substrate and a light emitting element formed on one surface of the substrate; forming, after the back-grinding, a reflective layer on an outer side of the substrate; and attaching, on an outer side of the light emitting element of the LED wafer, a heat-resistant pressure-sensitive adhesive sheet.

Abstract: A method of manufacturing an LED including: back-grinding a substrate of an LED wafer including a light emitting element and the substrate; and attaching a protective sheet to the LED wafer one of prior to the back-grinding and after grinding the substrate in the back-grinding.

Abstract: A method of manufacturing a semiconductor element is provided. The method includes the steps of: bonding a substrate for transferring and a functional layer that is formed on a substrate for forming a functional layer with a temporary fixing layer interposed therebetween; removing the substrate for forming a functional layer to expose the functional layer; bonding a final substrate to the exposed functional layer; and separating the temporary fixing layer and the substrate for transferring from the functional layer, wherein the temporary fixing layer has (A) a specific shear adhering strength or has (B) a specific weight loss rate.

Abstract: A method of manufacturing an LED according to an embodiment of the present invention includes back-grinding a substrate of an LED wafer including a light emitting element and the substrate, where the back-grinding includes fixing the LED wafer to a table via a double-sided pressure-sensitive adhesive sheet, and then grinding the substrate.

Abstract: A method of manufacturing an LED according to an embodiment of the present invention includes: forming a reflective layer on an outer side of a substrate of an LED wafer including the substrate and a light emitting element on one surface of the substrate; and attaching, prior to the forming a reflective layer, a heat-resistant pressure-sensitive adhesive sheet onto an outer side of the light emitting element.

Abstract: A method of manufacturing a semiconductor device which is excellent in high-temperature high-humidity reliability without decreasing moldability and curability is provided. The method includes sealing a semiconductor element in resin using a semiconductor-sealing epoxy resin composition; and then performing a heating treatment. The semiconductor-sealing epoxy resin composition contains (A) an epoxy resin of formula (1): wherein X is a single bond, —CH2—, —S— or —O—; and R1 to R4, which may be the same as or different, are each —H or —CH3, (B) a phenolic resin, (C) an amine-based curing accelerator, and (D) an inorganic filler. The heating treatment is performed under heat treatment conditions defined by a region in which a relationship t?3.3×10?5 exp(2871/T) is satisfied where t is heat treatment time in minutes and T is heat treatment temperature in ° C. and where 185?T?300.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, which includes the following components (A) to (E): (A) a bifunctional epoxy resin, (B) a curing agent, (C) an imidazole compound represented by the formula (1), in which R1 and R2 each independently represent an alkyl group or an alkylol group, in which at least one of R1 and R2 represents an alkylol group, and R3 represents an alkyl group or an aryl group, (D) a linear saturated carboxylic acid having a number average molecular weight of 550 to 800, and (E) an inorganic filler.

Abstract: A method for producing an epoxy resin composition for semiconductor encapsulation, which does not cause void generation and the like and is excellent in reliability. A method for producing an epoxy resin composition for semiconductor encapsulation, which contains the following components (A) to (C): (A) an epoxy resin, (B) a phenol resin, and (C) a hardening accelerator, which comprises mixing the whole or a part of the components excluding the component (A) among the components containing the components (A) to (C) in advance under a reduced pressure of from 1.333 to 66.65 kPa and under a heating condition of from 100 to 230° C., and then mixing the component (A) and remaining components with the resulting mixture.

Abstract: An epoxy resin composition for semiconductor encapsulation capable of giving semiconductor devices of high reliability that do not cause short circuits even in pitch reduction in the interconnection electrode distance or the conductor wire distance therein as well as a semiconductor device using the same. The epoxy resin composition for semiconductor encapsulation, which comprises the following components (A) to (C): (A) an epoxy resin, (B) a phenolic resin, and (C) an inorganic filler for preventing semiconductors from short-circuiting in a step of semiconductor encapsulation.

Abstract: A method for producing an epoxy resin composition for semiconductor encapsulation, which does not cause void generation and the like and is excellent in reliability. A method for producing an epoxy resin composition for semiconductor encapsulation, which contains the following components (A) to (C): (A) an epoxy resin, (B) a phenol resin, and (C) a hardening accelerator, which comprises mixing the whole or a part of the components excluding the component (A) among the components containing the components (A) to (C) in advance under a reduced pressure of from 1.333 to 66.65 kPa and under a heating condition of from 100 to 230° C., and then mixing the component (A) and remaining components with the resulting mixture.

Abstract: An epoxy resin composition for semiconductor encapsulation capable of giving semiconductor devices of high reliability that do not cause short circuits even in pitch reduction in the interconnection electrode distance or the conductor wire distance therein as well as a semiconductor device using the same. The epoxy resin composition for semiconductor encapsulation, which comprises the following components (A) to (C): (A) an epoxy resin, (B) a phenolic resin, and (C) an inorganic filler for preventing semiconductors from short-circuiting in a step of semiconductor encapsulation.

Abstract: A method of production of a semiconductor device such as a plastic pin grid array (PPGA) and a plastic ball grid array (PBGA) having a cavity-fill form. In this method, first, a semiconductor element (3) is placed in a cavity (6) formed in a multiple step-like substrate (2). Under this state, a pellet (7), which is in a solid state at a normal temperature, made of an encapsulating resin composition containing specific components, and has specific characteristics, is placed on the semiconductor element (3). Next, the semiconductor device is heated so that the pellet can melt to fill the cavity (6) with the composition, thereby encapsulating the semiconductor device (3). According to the present invention, a semiconductor device having low stress performance and excellent moisture-proof reliability can be efficiently produced.

Abstract: This invention relates to a conducting organic polymer formed by doping an organic polymer with a protonic acid having a dissociation constant value pKa of less than 4.8, wherein the organic polymer has, as the main repeating unit, a compound represented by the general formula: ##STR1## wherein, m and n, respectively, show the molar fraction of the quinonediimine structural unit and phenylenediamine structural unit in the repeating unit, and 0<m<1, 0<n<1, and m+n=1; and the organic polymer is soluble in an organic solvent in the undoped state, and has an intrinsic viscosity ?.eta.! of more than 0.4 dl/g measured in N-methyl-2-pyrrolidone at 30.degree. C. This invention also relates to a film formed of the conducting organic polymer and a conducting organic polymer composition.

Abstract: A semiconductor device comprising a semiconductor element encapsulated with a cured resin having at least two secondary differential peaks of linear thermal expansion by a thermomechanical analytical measurement, the interval between the peaks being at least 20.degree. C. The semiconductor device encapsulated with the cured resin does not cause a warp and is excellent in the TCT test characteristics and the cracking resistance.

Abstract: Copolycondensation of a hydroxyl group-containing naphthalene and xylene with an aldehyde compound gives a polyhydroxy aromatic compound. The hydroxyl group-containing naphthalene comprises at least one of naphthols and dihydroxynaphthalenes. In the polyhydroxy aromatic compound, the proportions of the naphthalene unit and xylene unit are 95 to 50:5 to 50 (mole percent), and each molecule contains 2 to 20 naphthalene units. The polyhydroxy aromatic compound is useful as an epoxy resin curing agent. Reaction of the polyhydroxy aromatic compound with an epihalohydrin gives an epoxy resin. An epoxy resin composition can be prepared from the epoxy resin and a curing agent.

Abstract: Copolycondensation of .alpha.-naphthol and .beta.-naphthol with an aldehyde compound gives a poly-hydroxynaphthalene compound having an average molecular weight of 300 to 2,000. This compound is useful as a curing agent for epoxy resins and as a precursor of epoxy resins. Epoxy resin compositions include (1) compositions comprising an epoxy resin and the poly-hydroxynaphthalene compound as a curing agent and (2) compositions comprising an epoxy resin obtained by reacting the poly-hydroxynaphthalene compound with an epihalohydrin and a curing agent. The epoxy resin compositions of the invention are characterized in that the cured resins have a high glass transition temperature and high heat stability and high moisture resistance, scarcely allowing package cracking even in soldering treatment. Therefore the compositions are suited for use in encapsulating semiconductors.

Abstract: This invention relates to an organic polymer having, as the main repeating unit, the compound represented by the general formula: ##STR1## (wherein, m and n respectively show the molar fraction of quinonediimine structure unit and phenylenediamine structure unit in the repeating unit, and 0<m<1, 0<n<1, and m+n=1.), and soluble in an organic solvent in an undoped state, and having the intrinsic viscocity [.eta.] of more than 0.4 dl/g measured in N-methyl-2-pyrrolidone at 30.degree. C., and a conducting organic polymer formed by doping a protonic acid to such a polymer.