Abstract: A surface acoustic wave device includes: an IDT electrode formed at a main surface of a piezoelectric substrate, an extraction electrode extracted from the IDT electrode; a surface acoustic wave chip having a metal junction formed along a periphery of the main surface of the piezoelectric substrate; a contact electrode made of an insulating material, connecting to the extraction electrode formed at one main surface thereof; an external electrode formed at the other main surface of the contact electrode; and a cover substrate having a through-hole electrode for connecting the contact electrode to the external electrode. The IDT electrode and the extraction electrode are hermetically sealed in an interior of the space formed by bonding the surface acoustic wave chip to the cover substrate through the metal junction.

Abstract: Manufacturing a piezoelectric vibration device, includes: forming a bonding electrode on a part of a piezoelectric substrate to which a cover makes contact; forming a part defining a through hole to the cover so that a profile of an edge of an opening of the through hole at a first surface of the cover is positioned inside an outer shape of the taking out electrode in a plan view when the cover and the piezoelectric substrate are overlapped; forming a first glass film on the first surface of the cover; forming a second glass film on the first surface of the cover; bonding the first glass film to the taking out electrode as well as the second glass film to the bonding electrode by generating an electric field; and cutting an electrical coupling between the taking out electrode and the bonding electrode after step (e).

Abstract: A surface acoustic wave chip formed with an inter-digital transducer entirely over a piezoelectric substrate. In the surface acoustic wave chip, the inter-digital transducer is extended to a rim of the piezoelectric substrate, and a partition section is provided all the way to the rim of the piezoelectric substrate to partition an electrode pattern to derive two of the inter-digital transducers.

Abstract: A surface acoustic wave device includes a surface acoustic wave (SAW) chip and a cover that are bonded in a body by bonding a metal bonding portion of the SAW chip and a metal bonding portion of the cover and bonding extraction electrodes of the SAW chip and connection electrodes of the cover so as to hermetically seal IDT electrodes disposed on a main surface of a piezoelectric substrate of the SAW chip within a space defined between the SAW chip and the cover. The IDT electrodes and external electrodes on an upper surface of an insulating substrate of the cover are electrically connected to each other through conductive materials formed in through-holes.

Abstract: An operational state of C-AF processing is judged. If the operational state is judged to not be a focused state, when the operational state is a state of fine adjustment, only a range in a vicinity of a current position of a focus lens is searched, and a focused state is set. When the operational state is a state where the focus lens is being driven to a focus position, only a range in a vicinity of a focus position already been detected is searched, and the focused state is set. When the operational state is a state during searching for a peak, searching is carried out in a current driving direction from a current position of the focus lens, and the focused state is set. When the operational state is none of above states, an entire region is searched, and the focused state is set.

Abstract: Disclosed is an organic thin film device having an organic thin film consisting of a mixed-stacked charge-transfer complex, wherein the organic thin film contains n species of donor molecule D.sub.1 . . . D.sub.n and m species of acceptor molecule A.sub.1 . . . A.sub.m and forms mixed crystal represented by (D.sub.1).sub.x1 . . . (D.sub.n).sub.xn -(A.sub.1).sub.y1 . . . (A.sub.m).sub.ym and the combinations of a donor molecule and an acceptor molecule consist of a group forming ionic complex crystal and a group forming neutral complex crystal.

Abstract: An organic thin film display element comprises a pair of electrodes, an organic thin film interposed between the electrodes and including both donor molecules and acceptor molecules, and an insulating layer having a relative dielectric constant of 10 or more, and interposed between at least one of the electrodes and the organic thin film.

Abstract: A polyimide thin film is formed on a substrate by imparting energy under vacuum, by means of heating, ultraviolet light or electron beam irradiation, or a combination thereof, to a polyimide having in the polymer main chain imide bonds and decomposable bonds such as carbon-carbon single bond differing from the imide bonds so as to break the decomposable bonds.

Abstract: A magnetic head core having a generally annular structure with an inner coil-winding aperture, and a magnetic gap which has a predetermined width and which is formed so as to extend in a direction across the annulus of the annular structure. The annular structure is formed by a plurality of ferrite core elements bonded together by direct solid-solid reaction bonding, with a non-magnetic layer of SiO or SiO.sub.2 interposed between two opposed portions of the ferrite core elements which define the magnetic gap. The non-magnetic layer defines the width of the magnetic gap.

Abstract: A magnetic head core having a generally annular structure with an inner coil-winding aperture, and a magnetic gap which has a predetermined width and which is formed so as to extend in a direction across the annulus of the annular structure. The annular structure is formed by a plurality of ferrite core elements bonded together by direct solid-solid reaction bonding, with a non-magnetic layer of SiO or SiO.sub.2 interposed between two opposed portions of the ferrite core elements which define the magnetic gap. The non-magnetic layer defines the width of the magnetic gap.