Patents by Inventor Shinya FUKAHORI

Shinya FUKAHORI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240378341
    Abstract: A lifetime prediction method for nitride semiconductor light-emitting element that is a method for predicting lifetime of a nitride semiconductor light-emitting element, the method including a model creation step of creating a trained model by learning at least a correlation of at least one of a composition parameter or a physical property parameter of a layer constituting the nitride semiconductor light-emitting element and a manufacturing condition parameter, relative to lifetime of the nitride semiconductor light-emitting element; and a lifetime prediction step of predicting lifetime using the trained model. In the model creation step, at least one of the composition parameter or the physical property parameter of a predetermined layer of the nitride semiconductor light-emitting element is used for the learning, and a growth temperature of the predetermined layer is used as the manufacturing condition parameter for the learning.
    Type: Application
    Filed: May 9, 2024
    Publication date: November 14, 2024
    Applicant: NIKKISO CO., LTD.
    Inventors: Yusuke MATSUKURA, Ryu NAKAJIMA, Naoki SHIBATA, Shinya FUKAHORI, Cyril PERNOT
  • Publication number: 20240378504
    Abstract: A light output prediction method for nitride semiconductor light-emitting element that is a method for predicting light output of a nitride semiconductor light-emitting element, the method including a model creation step of creating a trained model by learning at least a correlation of at least one of a composition parameter or a physical property parameter of a layer constituting the nitride semiconductor light-emitting element and a manufacturing condition parameter, relative to light output of the nitride semiconductor light-emitting element; and a light output prediction step of predicting light output using the trained model. In the model creation step, at least one of the composition parameter or the physical property parameter of a predetermined layer of the nitride semiconductor light-emitting element is used for the learning, and a growth temperature of the predetermined layer is used as the manufacturing condition parameter for the learning.
    Type: Application
    Filed: May 8, 2024
    Publication date: November 14, 2024
    Applicant: NIKKISO CO., LTD.
    Inventors: Ryu NAKAJIMA, Yusuke MATSUKURA, Naoki SHIBATA, Shinya FUKAHORI, Cyril PERNOT
  • Publication number: 20240038925
    Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.
    Type: Application
    Filed: October 13, 2023
    Publication date: February 1, 2024
    Inventors: Mitsugu WADA, Shinya FUKAHORI
  • Publication number: 20240038926
    Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.
    Type: Application
    Filed: October 13, 2023
    Publication date: February 1, 2024
    Inventors: Mitsugu WADA, Shinya FUKAHORI
  • Patent number: 11824137
    Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: November 21, 2023
    Assignee: NIKKISO CO., LTD.
    Inventors: Mitsugu Wada, Shinya Fukahori
  • Publication number: 20210336087
    Abstract: A semiconductor light-emitting element includes: an n-type clad layer; an active layer; a p-type clad layer; a first p-type contact layer; a second p-type contact layer; and a p-side electrode. The AlN ratio of the p-type clad layer is 50% or higher. The first p-type contact layer has an AlN ratio of 5% or lower, has a p-type dopant concentration equal to or higher than 8×1018/cm3 and equal to or lower than 5×1019/cm3, and has a thickness larger than 500 nm. The second p-type contact layer has an AlN ratio of 5% or lower, has a p-type dopant concentration equal to or higher than 8×1019/cm3 and equal to or lower than 4×1020/cm3, and has a thickness equal to or larger than 8 nm and equal to or smaller than 28 nm. The contact resistance of the p-side electrode is 1×10?2 ?·cm2 or smaller.
    Type: Application
    Filed: April 20, 2021
    Publication date: October 28, 2021
    Inventors: Tetsuhiko INAZU, Shinya FUKAHORI, Cyril PERNOT
  • Publication number: 20210193872
    Abstract: A semiconductor light-emitting element includes: an n-type clad layer made of an n-type AlGaN-based semiconductor material; an active layer made of an AlGaN-based semiconductor material; a p-type clad layer made of a p-type AlGaN-based semiconductor material having an AlN ratio of 50% or higher or a p-type AlN-based semiconductor material; a p-type contact layer made of a p-type AlGaN-based semiconductor material having an AlN ratio of 20% or lower or a p-type GaN-based semiconductor material; and a p-side electrode. A difference between the AlN ratio of the p-type clad layer and the AlN ratio of the p-type contact layer is 50% or higher, a thickness of the p-type contact layer is larger than 500 nm, and a contact resistance of the p-side electrode relative to the p-type contact layer is 1×10?2 ?·cm2 or smaller.
    Type: Application
    Filed: November 24, 2020
    Publication date: June 24, 2021
    Inventors: Tetsuhiko INAZU, Shinya FUKAHORI, Cyril PERNOT
  • Publication number: 20190393378
    Abstract: A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.
    Type: Application
    Filed: September 6, 2019
    Publication date: December 26, 2019
    Inventors: Mitsugu WADA, Shinya FUKAHORI