Abstract: An infrared ray shielding film having a metal particle-containing layer in which hexagonal to circular tabular metal particles are contained in 60% by number or more relative to total number of the metal particles contained in the metal particle-containing layer exhibits excellent infrared ray reflection at a wide range of from 800 nm to 2000 nm and shows little heat ray absorption.

Abstract: Provided is an optical member, including: a substrate having an at least partially curved surface; a concave-convex structure at an outermost surface, the concave-convex structure being prepared by hydrothermal treatment of a layer formed by gas-phase deposition of at least one of simple aluminum and a compound containing aluminum on the substrate; and a dielectric layer formed by gas-phase deposition between the substrate and the concave-convex structure.

Abstract: A semiconductor light emitting element that outputs emitted light having a predetermined emitted light peak wavelength ? includes: at least a substrate; a lower distributed Bragg reflector layer provided on the substrate; and a light emitting layer provided on the lower distributed Bragg reflector layer. At least one phase changing layer having a thickness of m?/2n (wherein n is the refractive index of the phase changing layer, and m is an integer 1 or greater) is provided within the lower distributed Bragg reflector layer.

Abstract: Performing a measurement using an optical field enhancement device which includes a transparent substrate having a transparent fine uneven structure on a surface and a metal film formed on a surface of the fine uneven structure on the surface of the substrate, in which a subject is placed on the metal film of the optical field enhancement device, then excitation light is projected onto an area of the optical field enhancement device on which the subject is placed, and light generated by the projection of the excitation light is detected from a back surface side of the transparent substrate.

Abstract: An antireflection film including a transparent thin film layer, and a transparent fine uneven layer whose main component is an alumina hydrate, which layers are formed in this order on a surface of a transparent substrate, is provided. The transparent thin film layer has an intermediate refractive index between the refractive index of the transparent substrate and the refractive index of the fine uneven layer, and the transparent thin film layer includes at least a nitride layer or an oxynitride layer.

Abstract: An antireflection film including a transparent thin film layer, and a transparent fine uneven layer whose main component is an alumina hydrate, which layers are formed in this order on a surface of a transparent substrate, is provided. The transparent thin film layer includes, in order from the transparent substrate side: an alumina layer; a water barrier layer which has a refractive index lower than the refractive index of the alumina layer and protects the alumina layer from water; and a flat layer whose main component is an alumina hydrate and whose refractive index is lower than the refractive index of the water barrier layer, and the water barrier layer has a thickness of 70 nm or less.

Abstract: A multilayer structure including a metal particles-containing layer, a layer A having a refractive index, n1, and a layer B having a refractive index, n2, and satisfying one of the conditions (1-1) and (2-1) is capable of suppressing reflection of light at a wavelength ? intended to prevent reflection. n1<n2 and ?/4+m?/2<n1×d1<?/2+m?/2??Condition (1-1) n1>n2 and 0+m?/2<n1×d1<?/4+m?/2??Condition (2-1) wherein m represents an integer of 0 or greater; ? represents a wavelength with a unit of nm intended to prevent reflection; n1 represents a refractive index of the layer A; and d1 represents a thickness with a unit of nm of the layer A.

Abstract: An optical electrical field enhancing device includes: a transparent substrate having a structure of fine protrusions and recesses on the surface thereof; and a metal structure layer of fine protrusions and recesses formed on the surface of the structure of fine protrusions and recesses. The metal structure layer of fine protrusions and recesses has a structure of fine protrusions and recesses, in which the distances among adjacent protrusions are less than the distances among corresponding adjacent protrusions of the structure of fine protrusions and recesses of the transparent substrate.

Abstract: An infrared ray shielding film having a metal particle-containing layer in which hexagonal to circular tabular metal particles are contained in 60% by number or more relative to total number of the metal particles contained in the metal particle-containing layer exhibits excellent infrared ray reflection at a wide range of from 800 nm to 2000 nm and shows little heat ray absorption.

Abstract: A semiconductor light emitting element that outputs emitted light having a predetermined emitted light peak wavelength ? includes: at least a substrate; a lower distributed Bragg reflector layer provided on the substrate; and a light emitting layer provided on the lower distributed Bragg reflector layer. At least one phase changing layer having a thickness of m?/2n (wherein n is the refractive index of the phase changing layer, and m is an integer 1 or greater) is provided within the lower distributed Bragg reflector layer.

Abstract: In a surface emission-type semiconductor light-emitting element including a DBR layer, a variation in light intensity due to a temperature change in the formation of a large number of elements manufactured from one wafer is suppressed while maintaining a light intensity enhancement effect. In the semiconductor light-emitting element that outputs emitted light having a predetermined emission peak wavelength ?, including at least a substrate 10, a lower distributed Bragg reflective layer 12 provided on the substrate 10, and a light-emitting layer 20 provided on a lower distributed Bragg reflective layer 12, the light-emitting layer 20 includes one or more sets of two active layers 22 arranged at a distance of (1+2m)?/4n in an inactive layer 21, ?, is the emission peak wavelength, n is a refractive index of the light-emitting layer 20, and m is an integer of 0 or greater.

Abstract: An optical field enhancement device which includes a transparent substrate having a transparent fine uneven structure on a surface and a metal film formed on a surface of the fine uneven structure on the surface of the substrate and allows projection of excitation light and detection of detection light either from a front surface side of the metal film or from a back surface side of the transparent substrate.

Abstract: An optical electrical field enhancing device includes: a transparent substrate having a structure of fine protrusions and recesses on the surface thereof; and a metal structure layer of fine protrusions and recesses formed on the surface of the structure of fine protrusions and recesses. The metal structure layer of fine protrusions and recesses has a structure of fine protrusions and recesses, in which the distances among adjacent protrusions are less than the distances among corresponding adjacent protrusions of the structure of fine protrusions and recesses of the transparent substrate.

Abstract: Provided is an optical member, including: a substrate having an at least partially curved surface; a concave-convex structure at an outermost surface, the concave-convex structure being prepared by hydrothermal treatment of a layer formed by gas-phase deposition of at least one of simple aluminum and a compound containing aluminum on the substrate; and a dielectric layer formed by gas-phase deposition between the substrate and the concave-convex structure.

Abstract: A heat-ray shielding material including: two or more metal particle-containing layers each containing at least one kind of metal particles; and one or more transparent dielectric layers, the heat-ray shielding material having a lamination structure where the metal particle-containing layers and the dielectric layers are alternatingly laminated, wherein at least one of the transparent dielectric layers has an optical thickness (nd) which satisfies the following expression (1) with respect to wavelength ?1 at which reflectance of the transparent dielectric layer is minimum: {(2m+1)×(?1/4)}?{(?1/4)×0.25}<nd<{(2m+1)×(?1/4)}+{(?1/4)×0.25}??Expression (1) where m is an integer of 0 or greater, ?1 is a wavelength at which the reflectance is minimum, n is a refractive index of the dielectric layer and d is a thickness (nm) of the dielectric layer.

Abstract: There is provided an LED lighting device having a satisfactory temperature characteristic and a small amount of variation in output current. The step-down chopper is provided with a first circuit including the switching element, the impedance means and a first inductor connected in series and a second circuit including the first inductor and a diode connected in series. A self-excited drive signal generation circuit is provided with a second inductor magnetically coupled with the first inductor and applies a voltage induced in the second inductor to the switching element to keep the switching element on. A turn-off circuit outputs an output voltage when the voltage of the impedance means detected by a comparator exceeds the reference value, and the output voltage allows a switching element to turn on to short-circuit the output terminals of the self-excited drive signal generation circuit, resulting in that the switching element is turned off.

Abstract: The present invention provides a heat ray-shielding material which includes metal particle-containing layer containing at least one kind of metal particle, wherein the metal particle contains substantially hexagonal or substantially discoidal metallic flat particles in an amount of 60% by number or more, and the main planes of the metallic flat particles are oriented at an angle ranging from 0° to ±30° relative to one surface of the metal particle-containing layer.

Abstract: A self-ballasted fluorescent lamp capable of achieving a similar appearance to that of an electric light bulb for general illumination includes a base that is attached to a bottom end of a cover and a luminous tube that is supported at a top end of the cover. Electronic components forming a lighting circuit are mounted on a substrate. The substrate is formed to have such a width dimension that allows the substrate to be inserted into the base. The substrate is vertically disposed along a center axis of the base at a position offset from the center axis. Large electronic components are disposed on a first face of the substrate, which faces a large component area in the base formed by the offset substrate.

Abstract: There is provided an LED lighting device having a satisfactory temperature characteristic and a small amount of variation in output current. The step-down chopper is provided with a first circuit including the switching element, the impedance means and a first inductor connected in series and a second circuit including the first inductor and a diode connected in series. A self-excited drive signal generation circuit is provided with a second inductor magnetically coupled with the first inductor and applies a voltage induced in the second inductor to the switching element to keep the switching element on. A turn-off circuit outputs an output voltage when the voltage of the impedance means detected by a comparator exceeds the reference value, and the output voltage allows a switching element to turn on to short-circuit the output terminals of the self-excited drive signal generation circuit, resulting in that the switching element is turned off.

Abstract: A self-ballasted fluorescent lamp capable of achieving a similar appearance to that of an electric light bulb for general illumination includes a base that is attached to a bottom end of a cover and a luminous tube that is supported at a top end of the cover. Electronic components forming a lighting circuit are mounted on a substrate. The substrate is formed to have such a width dimension that allows the substrate to be inserted into the base. The substrate is vertically disposed along a center axis of the base at a position offset from the center axis. Large electronic components are disposed on a first face of the substrate, which faces a large component area in the base formed by the offset substrate.