Abstract: A target supply device according to a first aspect of the present disclosure is configured to supply a metal target in a plasma generation region and may include a tank configured to house the metal target, a filter having been subjected to a dehydration process, the filter being configured to suppress passage of particles in the metal target housed in the tank, and a nozzle provided with a nozzle hole configured to eject the metal target that has passed through the filter.

Abstract: A target supply device according to a first aspect of the present disclosure is configured to supply a metal target in a plasma generation region and may include a tank configured to house the metal target, a filter having been subjected to a dehydration process, the filter being configured to suppress passage of particles in the metal target housed in the tank, and a nozzle provided with a nozzle hole configured to eject the metal target that has passed through the filter.

Abstract: A target supply device according to a first aspect of the present disclosure is configured to supply a metal target in a plasma generation region and may include a tank configured to house the metal target, a filter having been subjected to a dehydration process, the filter being configured to suppress passage of particles in the metal target housed in the tank, and a nozzle provided with a nozzle hole configured to eject the metal target that has passed through the filter.

Abstract: A target supply device according to a first aspect of the present disclosure is configured to supply a metal target in a plasma generation region and may include a tank configured to house the metal target, a filter having been subjected to a dehydration process, the filter being configured to suppress passage of particles in the metal target housed in the tank, and a nozzle provided with a nozzle hole configured to eject the metal target that has passed through the filter.

Abstract: A target supply device may include: a target generator configured to accommodate a liquid target material and having a nozzle with a nozzle hole from which the liquid target material is outputted; and a filter disposed in the target generator and made of glass, the glass reacting with the liquid target material, so that a solid reaction product is generated. The filter may include a first through-hole configured to allow the liquid target material to pass therethrough, and an inner surface of the first through-hole may be coated with a material which is not easy to react with the liquid target material.

Abstract: A target supply device may include: a target generator configured to accommodate a liquid target material and having a nozzle with a nozzle hole from which the liquid target material is outputted; and a filter disposed in the target generator and made of glass, the glass reacting with the liquid target material, so that a solid reaction product is generated. The filter may include a first through-hole configured to allow the liquid target material to pass therethrough, and an inner surface of the first through-hole may be coated with a material which is not easy to react with the liquid target material.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a first semiconductor region of a second conductivity type on a semiconductor layer of a first conductivity type, forming a mask selectively opening a surface of the first semiconductor region, and forming a trench penetrating through the first semiconductor region to reach the semiconductor layer. The method can include exposing further a part of the surface of the first semiconductor region from the mask. The method can include forming a control electrode in the trench, and forming selectively a second semiconductor region of the first conductivity type on the surface of the first semiconductor region. The method can include removing the mask having the opening. The method can include forming selectively a third conductor region of the second conductivity type on the surface of the first semiconductor region.