Abstract: A transistor array substrate includes a scan line formed on a support substrate, a capacitive section formed above the scan line, and a thin film transistor formed above the capacitive section, in which a perimeter of the thin film transistor is surrounded by a wall-shaped horizontal light-blocking film that extends in a normal direction with respect to the support substrate and is in contact with a surface of an electrode that is an uppermost layer of the capacitive section, and an upper light-blocking film is formed above the thin film transistor.

Abstract: A semiconductor device according to an embodiment of the disclosure includes: a first substrate; a TFT element provided on the first substrate with a first interlayer insulating layer interposed therebetween, and including a semiconductor layer and a gate electrode that is provided on the semiconductor layer with a gate insulating layer interposed therebetween; and a second substrate disposed to face the first substrate. The gate electrode includes a first electroconductive film and a second electroconductive film that has a light-shielding property in order from side of the semiconductor layer. The second electroconductive film extends from a side face to a bottom face of each of a pair of openings that are provided to interpose the semiconductor layer.

Abstract: A semiconductor device according to an embodiment of the disclosure includes: a first substrate; a TFT element provided on the first substrate with a first interlayer insulating layer interposed therebetween, and including a semiconductor layer and a gate electrode that is provided on the semiconductor layer with a gate insulating layer interposed therebetween; and a second substrate disposed to face the first substrate. The gate electrode includes a first electroconductive film and a second electroconductive film that has a light-shielding property in order from side of the semiconductor layer. The second electroconductive film extends from a side face to a bottom face of each of a pair of openings that are provided to interpose the semiconductor layer.

Abstract: A liquid crystal display includes: a drive substrate having a plurality of pixel electrodes at a pixel section as an effective pixel region; a counter substrate arranged in opposition to the drive substrate and having a counter electrode that is arranged in opposition to the plurality of pixel electrodes; a liquid crystal layer sealed between the drive substrate and the counter substrate; an alignment film formed at the pixel section and a part of or an entire peripheral section thereof on the surface at the liquid crystal layer side of the drive substrate; a protective film formed between the pixel electrode and the alignment film in at least the pixel section on the drive substrate; and a conductive film formed on the part of or the entire peripheral section of the drive substrate to come in contact with the alignment film.

Abstract: A method for manufacturing a liquid crystal display device includes: an active matrix substrate formation step of forming an active matrix substrate, wherein the active matrix substrate formation step includes a first step of forming a microlens array having a plurality of microlenses on a transparent substrate, a second step of forming an oxide film on the microlens array, a third step of forming a TFT array having a plurality of TFT devices above the oxide film, and a fourth step of forming a light-blocking film selectively to define pixel openings.