Abstract: Provided is an additive for an electroplating solution, including a reaction product of at least one kind of epoxy compound (a1) represented by the general formula (1) and at least one kind of tertiary amine compound (a2): where L1 and L2 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group represented by any one of the general formulae (L-1) to (L-3), and n represents an integer of from 1 to 5: where m1 to m3 each independently represent an integer of from 1 to 5, and * represents a bonding site.

Abstract: The present invention provides an additive for electrolytic plating solutions, containing at least one selected from compounds represented by the chemical formulas (1) to (4) given in the present description, an electrolytic plating solution containing the additive for electrolytic plating solutions, and an electrolytic plating method that uses the electrolytic plating solution.

Abstract: The present invention provides a copper electroplating solution including: (A) a sulfate ion; (B) a compound represented by the following general formula (1); and (C) a copper ion, wherein the copper electroplating solution has a content of the component (B) of from 0.3 part by mass to 50 parts by mass and a content of the component (C) of from 5 parts by mass to 50 parts by mass with respect to 100 parts by mass of a content of the component (A): where R1 and R2 each independently represent a hydrogen atom, a sodium atom, a potassium atom, or an alkyl group having 1 to 5 carbon atoms, and “n” represents 1 or 2, a method of producing the copper electroplating solution, and a copper electroplating method including using the copper electroplating solution.

Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

Abstract: Provided is an additive for an electroplating solution, including a compound represented by the following general formula (1): where R1 to R3 each independently represent a group represented by the following general formula (2), A1 represents an alkanediyl group having 2 to 4 carbon atoms, and “n” represents 0 or 1: where R4 and R5 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, A2 and A3 each independently represent an alkanediyl group having 2 to 4 carbon atoms, “m” represents an integer of from 1 to 4, and * represents a bonding site.

Abstract: The present invention provides an additive for electrolytic plating solutions, containing at least one selected from compounds represented by the chemical formulas (1) to (4) given in the present description, an electrolytic plating solution containing the additive for electrolytic plating solutions, and an electrolytic plating method that uses the electrolytic plating solution.