Abstract: A light emitting device includes a first layer including a first light emitting element that has a first light emission region and a first transparent insulation member that covers the first light emitting element; a second layer stacked on the first layer and including a second light emitting element that has a second light emission region and a second transparent insulation member that covers the second light emitting element; and a third layer stacked on the second layer and including a third light emitting element that has a third light emission region, at least partially overlapping with the first light emission region and the second light emission region, and a third transparent insulation member that covers the third light emitting element, wherein the third light emission region is formed so that its area is larger than the first light emission region and the second light emission region.

Abstract: A manufacturing method of a semiconductor element includes forming a plurality of islands, each including a semiconductor layer containing a nitride semiconductor and a support formed on the semiconductor layer, on a sapphire substrate, joining the support to a retention substrate via an adhesive member, peeling off the semiconductor layer from the sapphire substrate by irradiating the semiconductor layer with laser light, and polishing a surface of the semiconductor layers peeled off from the sapphire substrate.

Abstract: A manufacturing method of a semiconductor element includes forming a plurality of semiconductor layers on a sapphire substrate, each of the semiconductor layers having a first surface on the sapphire substrate side and a second surface on the opposite side, joining the second surfaces of the plurality of semiconductor layers to a retention member via an adhesive member, peeling off the plurality of semiconductor layers from the sapphire substrate by irradiating the first surfaces of the plurality of semiconductor layers with laser light, and polishing the first surfaces of the plurality of semiconductor layers. At least one semiconductor layer among the plurality of semiconductor layers includes a polishing indication part extending from the second surface toward the first surface. The polishing is executed until the polishing indication part is exposed to the polished surface.

Abstract: A semiconductor device includes: a planarized layer having insulating properties, the planarized layer having a first surface and a second surface opposite the first surface; a plurality of semiconductor elements formed on the first surface of the planarized layer; and a groove provided in the second surface of the planarized layer. The groove is formed in a region outside the plurality of semiconductor elements as viewed in a direction perpendicular to the first surface.

Abstract: An electronic structure includes: a substrate having a first surface; a functional element unit including a functional element having an electronic function, and a protector covering the functional element, the functional element unit having a second surface facing the first surface; a support disposed between the first surface and the second surface, the support supporting the second surface; and a projection disposed on a first surface side of the substrate, the projection projecting toward the functional element unit. The support has a third surface in contact with the second surface of the functional element unit, the third surface having an area smaller than an area of the second surface. The projection has a fourth surface in contact with or close to the functional element unit, the fourth surface having an area smaller than the area of the second surface, the projection being formed by a different material from the support.

Abstract: An electronic structure includes a substrate having a first surface; a functional unit including a functional section that has an electronic function and a protective member that protects the functional section and having a second surface formed on the first surface’s side; and a support layer provided at a position to contact the first surface and having a third surface in contact with the second surface of the functional unit, area of the third surface being smaller than area of the second surface, wherein one of part of the functional unit forming the second surface of the protective member and part of the support layer forming the third surface contains organic material as its principal component and the other contains inorganic material as its principal component.

Abstract: A light emitting device includes a pixel set unit that includes a plurality of pixels arranged in a grid; first common wiring that connects together first terminals of pixels aligned in a first direction among the plurality of pixels; and second common wiring that connects together second terminals of two pixels aligned in a second direction orthogonal to the first direction among the plurality of pixels.

Abstract: Provided is a light emitting device that includes a substrate including electrodes; a film member; light emitting elements arranged on the film member; and conductive members that electrically connect the light emitting elements and the electrodes to each other, wherein the film member has through holes formed at positions corresponding to the electrodes, and each of the conductive members includes a first conductive part extending from the light emitting element to the through hole and a second conductive part connecting the first conductive part and the electrode to each other via the through hole.

Abstract: One of embodiments is a method of manufacturing driven element chips by dividing a semiconductor wafer into the driven element chips. The method includes preparing a semiconductor wafer which includes chip substrate portions arrayed in an array direction, and a clearance between the chip substrate portions adjacent to each other in the array direction. Each chip substrate portion includes: a conductive layer provided inside the chip substrate portion and including interconnect portions; and a dummy conductor provided in a part of the conductive layer where the interconnect portions are not provided.

Abstract: A light emitting element device includes: a light emitting thyristor having a layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type that are layered in this order; and a gate electrode for supplying gate current to the light emitting thyristor. The light emitting thyristor includes an etching stop layer disposed on a surface of the third semiconductor layer or included in the third semiconductor layer, the etching stop layer being a semiconductor layer having an etching rate lower than an etching rate of a semiconductor layer adjacent to the etching stop layer.

Abstract: One of embodiments is a method of manufacturing driven element chips by dividing a semiconductor wafer into the driven element chips. The method includes preparing a semiconductor wafer which includes chip substrate portions arrayed in an array direction, and a clearance between the chip substrate portions adjacent to each other in the array direction. Each chip substrate portion includes: a conductive layer provided inside the chip substrate portion and including interconnect portions; and a dummy conductor provided in a part of the conductive layer where the interconnect portions are not provided.

Abstract: A light emitting element device includes: a light emitting thyristor having a layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type that are layered in this order; and a gate electrode for supplying gate current to the light emitting thyristor. The light emitting thyristor includes an etching stop layer disposed on a surface of the third semiconductor layer or included in the third semiconductor layer, the etching stop layer being a semiconductor layer having an etching rate lower than an etching rate of a semiconductor layer adjacent to the etching stop layer.

Abstract: A semiconductor light emitting device includes a thin-film semiconductor light emitting element, a substrate, a first insulation layer having a surface to which the thin-film semiconductor light emitting element is bonded, a first metal layer composed of aluminum and disposed on a side of the first insulation layer facing the substrate, and a second insulation layer disposed between the first insulation layer and the first metal layer.