Abstract: The present invention relates to a method of producing a SiC—Si composite component. The method includes preparing a first molded body containing SiC particles by a 3D printing method, wherein the first molded body has a first average pore diameter M1; forming a second molded body, in which the first molded body and a dispersion containing carbon particles are brought into contact so that the pores are impregnated with the carbon particles, wherein the carbon particles have a secondary particle having an average particle diameter M2, and the carbon particles satisfy the following formula: M2?M1/10; and forming a SiC—Si composite component by carrying out that the second molded body is impregnated with a metallic Si and is reactively sintered; wherein the content of Si is in the range of 5% by mass to 40% by mass in the SiC—Si composite component.

Abstract: A composition for bonding includes tin, germanium, and nickel. A contained amount of germanium is less than or equal to 10 mass %. A contained amount of nickel in mass % is less than or equal to a product of 2.8 multiplied by a term that is the contained amount of germanium in mass % to the power of 0.3.

Abstract: A composition for bonding incudes tin, germanium, and nickel. A contained amount of germanium is less than or equal to 10 mass %. A contained amount of nickel in mass % is less than or equal to a product of 2.8 multiplied by a term that is the contained amount of germanium in mass % to the power of 0.3.

Abstract: A process for producing a synthetic silica glass optical component which contains at least 1×1017 molecules/cm3 and has an OH concentration of at most 200 ppm and substantially no reduction type defects, by treating a synthetic silica glass having a hydrogen molecule content of less than 1×1017 molecules/cm3 at a temperature of from 300 to 600° C. in a hydrogen gas-containing atmosphere at a pressure of from 2 to 30 atms.

Abstract: The present invention provides a mask blank which comprises a substrate made of a synthetic quartz glass and a light-shielding film laminated on a surface of the substrate and is for use in a semiconductor device production technique employing an exposure light wavelength of 200 nm or shorter, wherein the mask blank has a birefringence, as measured at a wavelength of 193 nm, of 1 nm or less per substrate thickness. According to the present invention, mask blanks suitable for use in the immersion exposure technique and the polarized illumination technique are provided.

Abstract: The present invention relates to a method for producing an article having a fine concave and convex structure on a surface thereof, comprising the following steps (i) to (iii): (i) step of sandwiching a photocurable composition between a mold having an inverted structure of the fine concave and convex structure on a surface thereof and a substrate; (ii) step of irradiating the photocurable composition with light; and (iii) step of separating the mold from the cured product to obtain an article comprising the substrate having on a surface thereof the cured product having the fine concave and convex structure on a surface thereof, in which the mold contains TiO2-containing quartz glass, and at least the step (i) is conducted in a helium gas atmosphere.

Abstract: An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.

Abstract: The present invention relates to a TiO2-containing silica glass having a TiO2 content of 7.5 to 12% by mass, a fictive temperature of 1,000° C. or higher, and a temperature at which a coefficient of linear thermal expansion is 0 ppb/° C. being within the range of 40 to 110° C.

Abstract: The present invention provides a TiO2—SiO2 glass whose coefficient of linear thermal expansion in the range of the time of irradiation with EUV light is substantially zero when used as an optical member of an exposure tool for EUVL and which has extremely high surface smoothness. The present invention relates to a TiO2-containing silica glass having a TiO2 content of from 7.5 to 12% by mass, a temperature at which a coefficient of linear thermal expansion is 0 ppb/° C., falling within the range of from 40 to 110° C., and a standard deviation (?) of a stress level of striae of 0.03 MPa or lower within an area of 30 mm×30 mm in at least one plane.

Abstract: The present invention provides a TiO2—SiO2 glass in which when used as an optical member for an exposure tool for EUVL, a thermal expansion coefficient is substantially zero at the time of irradiation with high-EUV energy light, and physical properties of a multilayer can be kept over a long period of time by releasing hydrogen from the glass. The present invention relates to a TiO2-containing silica glass having a fictive temperature of 1,100° C. or lower, a hydrogen molecule concentration of 1×1016 molecules/cm3 or more, and a temperature, at which a linear thermal expansion coefficient is 0 ppb/° C., falling within the range of from 40 to 110° C.

Abstract: The present invention is to provide a TiO2—SiO2 glass whose coefficient of linear thermal expansion at the time of irradiating with high EUV energy light becomes substantially zero when used as an optical member of an exposure tool for EUVL. The present invention relates to a TiO2-containing silica glass, having a fictive temperature of 1,000° C. or lower, a OH concentration of 600 ppm or higher, a temperature at which the coefficient of linear thermal expansion becomes 0 ppb/° C. of from 40 to 110° C., and an average coefficient of linear thermal expansion in the temperature range of 20 to 100° C., of 50 ppb/° C. or lower.

Abstract: The present invention provides a TiO2—SiO2 glass whose coefficient of linear thermal expansion upon irradiation with high EUV energy light is substantially zero, which is suitable as an optical member of an exposure tool for EUVL. The present invention relates to a TiO2-containing silica glass having a halogen content of 100 ppm or more; a fictive temperature of 1,100° C. or lower; an average coefficient of linear thermal expansion in the range of from 20 to 100° C. of 30 ppb/° C. or lower; a temperature width ?T, in which a coefficient of linear thermal expansion is 0±5 ppb/° C., of 5° C. or greater; and a temperature, at which a coefficient of linear thermal expansion is 0 ppb/° C., falling within the range of from 30 to 150° C.

Abstract: The present invention is to provide a TiO2—SiO2 glass having suitable thermal expansion properties as an optical member of an exposure tool for EUVL. The present invention relates to a TiO2-containing silica glass having a temperature, at which a coefficient of thermal expansion is 0 ppb/° C., falling within the range of 23±4° C. and a temperature width, in which a coefficient of thermal expansion is 0±5 ppb/° C., of 5° C. or more.

Abstract: The present invention provides a mask blank which comprises a substrate made of a synthetic quartz glass and a light-shielding film laminated on a surface of the substrate and is for use in a semiconductor device production technique employing an exposure light wavelength of 200 nm or shorter, wherein the mask blank has a birefringence, as measured at a wavelength of 193 nm, of 1 nm or less per substrate thickness. According to the present invention, mask blanks suitable for use in the immersion exposure technique and the polarized illumination technique are provided.

Abstract: The present invention provides a TiO2—SiO2 glass in which when used as an optical member for an exposure tool for EUVL, a thermal expansion coefficient is substantially zero at the time of irradiation with high-EUV energy light, and physical properties of a multilayer can be kept over a long period of time by releasing hydrogen from the glass. The present invention relates to a TiO2-containing silica glass having a fictive temperature of 1,100° C. or lower, a hydrogen molecule concentration of 1×1016 molecules/cm3 or more, and a temperature, at which a linear thermal expansion coefficient is 0 ppb/° C., falling within the range of from 40 to 110° C.

Abstract: The present invention provides a TiO2—SiO2 glass whose coefficient of linear thermal expansion in the range of the time of irradiation with EUV light is substantially zero when used as an optical member of an exposure tool for EUVL and which has extremely high surface smoothness. The present invention relates to a TiO2-containing silica glass having a TiO2 content of from 7.5 to 12% by mass, a temperature at which a coefficient of linear thermal expansion is 0 ppb/° C., falling within the range of from 40 to 110° C., and a standard deviation (?) of a stress level of striae of 0.03 MPa or lower within an area of 30 mm×30 mm in at least one plane.

Abstract: The present invention provides a TiO2—SiO2 glass whose coefficient of linear thermal expansion upon irradiation with high EUV energy light is substantially zero, which is suitable as an optical member of an exposure tool for EUVL. The present invention relates to a TiO2-containing silica glass having a halogen content of 100 ppm or more; a fictive temperature of 1,100° C. or lower; an average coefficient of linear thermal expansion in the range of from 20 to 100° C. of 30 ppb/° C. or lower; a temperature width ?T, in which a coefficient of linear thermal expansion is 0±5 ppb/° C., of 5° C. or greater; and a temperature, at which a coefficient of linear thermal expansion is 0 ppb/° C., falling within the range of from 30 to 150° C.

Abstract: The present invention is to provide a TiO2—SiO2 glass whose coefficient of linear thermal expansion at the time of irradiating with high EUV energy light becomes substantially zero when used as an optical member of an exposure tool for EUVL. The present invention relates to a TiO2-containing silica glass, having a fictive temperature of 1,000° C. or lower, a OH concentration of 600 ppm or higher, a temperature at which the coefficient of linear thermal expansion becomes 0 ppb/° C. of from 40 to 110° C., and an average coefficient of linear thermal expansion in the temperature range of 20 to 100° C., of 50 ppb/° C. or lower.

Abstract: The present invention is to provide a TiO2—SiO2 glass having suitable thermal expansion properties as an optical member of an exposure tool for EUVL. The present invention relates to a TiO2-containing silica glass having a temperature, at which a coefficient of thermal expansion is 0 ppb/° C., falling within the range of 23±4° C. and a temperature width, in which a coefficient of thermal expansion is 0±5 ppb/° C., of 5° C. or more.

Abstract: To reduce the change in the refractive index of an irradiated portion of synthetic quartz glass, caused by the irradiation with a high energy light emitted from a light source such as a KrF excimer laser or an ArF excimer laser. A process for producing an optical member made of synthetic quartz glass, wherein the OH group concentration of the optical member is set depending upon the energy density of the laser beam employed, to adjust the ratio R (KJ/cm.sup.2-ppb).sup.-1 of the change in the refractive index of the optical member to the cumulative irradiation energy (KJ/cm.sup.2) by the laser, to be 0.Itoreq.R.Itoreq.0.2, thereby to control the change in the refractive index of the optical member made of synthetic quartz glass by the irradiation with a laser beam to be within a predetermined range.