Abstract: A crucible provided with a holding section (12) for holding a raw material (20), an initial distillate recovery section (14) for recovering an initial distillate (24) when the raw material (20) held in the holding section (12) has been vaporized, a main distillate condensing section (16) for condensing a main distillate when the raw material (20) held in the holding section (12) has been vaporized, and a crystal growing section (18) for holding the main distillate (30) comprising a raw material melt (28) condensed by the main distillate condensing section (16) and producing crystals when crystals are grown from the held main distillate (30) is used as a crucible (10) for crystal growth used to grow crystals. This makes it possible to raise the efficiency of manufacturing crystals while achieving high purification of a raw material for semiconductor crystals.

Abstract: This radiation detection element (1) is provided with: a crystal part (10) that is formed from a mixed ion-electron conductor, which is a compound wherein thallium ions are bonded with bromine ions; a metal electrode (13a) that is formed on one surface of the crystal part (10); and a metal electrode (13b) that is formed on a surface which is on the reverse side of the surface where the metal electrode (13a) is formed. The crystal part (10) has metal-containing parts (12) in the surfaces where the metal electrodes (13a, 13b) are respectively formed, said metal-containing parts (12) containing thallium that is obtained by selectively removing elemental bromine and neutralizing thallium ions. Consequently, there are provided: a practical radiation detection element which is suppressed in the occurrence of problems caused by polarization; and a method for producing this radiation detection element.

Abstract: A semiconductor radiation detector is capable of measuring a ?-ray energy spectrum at 122 keV and 662 keV and having an energy resolution of no greater than 8% with respect to 122 keV ?-rays. The semiconductor radiation detector uses a semiconductor crystal sandwiched by a cathode and an anode. The semiconductor crystal is configured from a thallium bromide single crystal in which the concentration of lead as an impurity is less than 0.1 ppm, the full width at half maximum of the (110) rocking curve in the X-ray diffraction in specimen tilting angle scan is no greater than 1.6 degrees, the full width at half maximum in specimen in-plane rotation angle scan is no greater than 3.5 degrees, and the full width at half maximum in X-ray incident angle scan is no greater than 1.3 degrees.

Abstract: Provided is radiation detection equipment including: a semiconductor radiation detector which has a semiconductor crystal made of thallium bromide; a capacitor which applies a voltage to the semiconductor radiation detector; and at least one DC power source which accumulates positive charges and negative charges in either of electrodes of the capacitor. Herein, a cathode and an anode in the semiconductor radiation detector are formed of at least one kind of a metal selected from gold, platinum and palladium. Further, the DC power source periodically reverses a voltage of accumulating the positive charges and a voltage of accumulating the negative charges in either of the electrodes of the capacitor per interval shorter than 10 min, thereby to apply the resulting voltage thereto.

Abstract: The present invention provides a semiconductor radiation detector including a semiconductor crystal sandwiched between a cathode electrode and an anode electrode, and a nuclear medicine diagnosis device using the semiconductor radiation detector. The semiconductor crystal is composed of a single crystal of thallium bromide of which the concentration of lead taken as an impurity is less than 0.1 ppm.

Abstract: Provided are a thallium bromide semiconductor radiation detector having stable measurement performance with little noise increase even during prolonged measurement, and a nuclear medicine diagnosis device employing the same. In a semiconductor radiation detector using thallium bromide as a semiconductor crystal sandwiched between cathode and anode electrodes, a remaining surface, among surfaces of the semiconductor crystal, which is other than a surface covered with the cathode or anode electrode, is covered with a passivation layer including any one of two materials, that is, fluoride of thallium and chloride of thallium, or a mixture of any one of the two materials and bromide of thallium.

Abstract: The present invention provides a radiation measurement device, which shortens periodic interruption periods in the radiation measurements and prevents damage to the amplifier, and a nuclear medicine diagnosis system using such measurement device. The radiation measurement device comprises a semiconductor radiation detector detecting a radiation, a capacitor, which applies voltage to the semiconductor radiation detector, one or more direct current power supplies each capable of making either of positive and negative electric charge collect on one of the electrodes of the capacitor, a constant-current device, which conducts an electric current from the direct current power supplies to the one of the electrodes of the capacitor, and two or more switching devices installed in the wiring connecting the direct current power supplies and the one of the electrodes of the capacitor. Further disclosed is a nuclear medicine diagnosis system equipped with such radiation measurement device.

Abstract: Provided is radiation detection equipment including: a semiconductor radiation detector which has a semiconductor crystal made of thallium bromide; a capacitor which applies a voltage to the semiconductor radiation detector; and at least one DC power source which accumulates positive charges and negative charges in either of electrodes of the capacitor. Herein, a cathode and an anode in the semiconductor radiation detector are formed of at least one kind of a metal selected from gold, platinum and palladium. Further, the DC power source periodically reverses a voltage of accumulating the positive charges and a voltage of accumulating the negative charges in either of the electrodes of the capacitor per interval shorter than 10 min, thereby to apply the resulting voltage thereto.

Abstract: The present invention provides a radiation measurement device, which shortens periodic interruption periods in the radiation measurements and prevents damage to the amplifier, and a nuclear medicine diagnosis system using such measurement device. The radiation measurement device comprises a semiconductor radiation detector detecting a radiation, a capacitor, which applies voltage to the semiconductor radiation detector, one or more direct current power supplies each capable of making either of positive and negative electric charge collect on one of the electrodes of the capacitor, a constant-current device, which conducts an electric current from the direct current power supplies to the one of the electrodes of the capacitor, and two or more switching devices installed in the wiring connecting the direct current power supplies and the one of the electrodes of the capacitor. Further disclosed is a nuclear medicine diagnosis system equipped with such radiation measurement device.

Abstract: A radiological imaging apparatus using a semiconductor radiation detector to make it possible to reduce a radiation measurement off time that may result from an attempt to avoid polarization, the radiological imaging apparatus comprising a capacitor that applies a voltage to a semiconductor radiation detector that detects a radiation from a subject, first current regulated means for conducting a charge current to the capacitor, and second current regulated means for conducting a discharge current from the capacitor, or comprising a capacitor that applies a voltage to the semiconductor radiation detector, a first resistor that conducts a charge current to and a discharge current from the capacitor, and a second resistor connected in parallel with the first resistor to subject the capacitor to charging and discharging.

Abstract: Provided are a detector array substrate and a nuclear medicine diagnosis device using the same. The detector array substrate is provided with a flat detection module stacked in plural detection elements, which is connected to said detectors each other, and have signal electrodes for reading out signals of respective detectors, and bias electrodes for applying bias voltage to respective detectors, in order to form plural detectors for detecting radiation; and stacked with the detectors by arranging the detection modules having the plural detectors, in an X direction, as well as by arranging the detection modules in a flat structure on both planes or one plane of a wiring board in a Z direction as for an XZ plane for detecting the radiation, and provided with the plural detection modules in a Y direction.

Abstract: A radiological imaging apparatus using a semiconductor radiation detector to make it possible to reduce a radiation measurement off time that may result from an attempt to avoid polarization, the radiological imaging apparatus comprising a capacitor that applies a voltage to a semiconductor radiation detector that detects a radiation from a subject, first current regulated means for conducting a charge current to the capacitor, and second current regulated means for conducting a discharge current from the capacitor, or comprising a capacitor that applies a voltage to the semiconductor radiation detector, a first resistor that conducts a charge current to and a discharge current from the capacitor, and a second resistor connected in parallel with the first resistor to subject the capacitor to charging and discharging.

Abstract: A radiological imaging apparatus using a semiconductor radiation detector to make it possible to reduce a radiation measurement off time that may result from an attempt to avoid polarization, the radiological imaging apparatus comprising a capacitor that applies a voltage to a semiconductor radiation detector that detects a radiation from a subject, first current regulated means for conducting a charge current to the capacitor, and second current regulated means for conducting a discharge current from the capacitor, or comprising a capacitor that applies a voltage to the semiconductor radiation detector, a first resistor that conducts a charge current to and a discharge current from the capacitor, and a second resistor connected in parallel with the first resistor to subject the capacitor to charging and discharging.

Abstract: Disclosed herein is a radiation imaging apparatus and radiation-imaging-apparatus-based nuclear medicine diagnosis apparatus having a collimator in which a plurality of rectangular through-holes are arranged in a grid pattern and separated by septa is rotated through a predetermined angle as viewed from above in relation to the layout of a plurality of rectangular detectors that are arranged in a grid pattern. The predetermined angle ranges from 20 to 70 degree and more preferably from 30 deg to 60 deg. With this configuration, the influence of sensitivity variations (moire patterns) that are included in an image picked up due to interference with a collimator when pixel type detectors are used is eliminated.

Abstract: A semiconductor radiation detector and a radiation detection equipment capable of suitably preventing the deterioration of the detection characteristics are disclosed. The semiconductor radiation detector 1 includes a semiconductor crystal 11a formed of at least one of CdTe, CdZnTe, GaAs and TlBr held between the electrodes of a cathode C and an anode A. At least one of the electrodes is a stack structure including a plurality of metals. The first layer is formed of Pt or Au, and the second layer is formed of a metal lower in hardness than Pt or Au, as the case may be, of the first layer. The second layer of In, for example, is formed by the electroless plating method. Also, a metal may be further stacked on the second layer.

Abstract: Disclosed herein is a radiation imaging apparatus and radiation-imaging-apparatus-based nuclear medicine diagnosis apparatus having a collimator in which a plurality of rectangular through-holes are arranged in a grid pattern and separated by septa is rotated through a predetermined angle as viewed from above in relation to the layout of a plurality of rectangular detectors that are arranged in a grid pattern. The predetermined angle ranges from 20 to 70 degree and more preferably from 30 deg to 60 deg. With this configuration, the influence of sensitivity variations (moire patterns) that are included in an image picked up due to interference with a collimator when pixel type detectors are used is eliminated.

Abstract: A radiological imaging apparatus using a semiconductor radiation detector to make it possible to reduce a radiation measurement off time that may result from an attempt to avoid polarization, the radiological imaging apparatus comprising a capacitor that applies a voltage to a semiconductor radiation detector that detects a radiation from a subject, first current regulated means for conducting a charge current to the capacitor, and second current regulated means for conducting a discharge current from the capacitor, or comprising a capacitor that applies a voltage to the semiconductor radiation detector, a first resistor that conducts a charge current to and a discharge current from the capacitor, and a second resistor connected in parallel with the first resistor to subject the capacitor to charging and discharging.

Abstract: Disclosed herein is a radiation imaging apparatus and radiation-imaging-apparatus-based nuclear medicine diagnosis apparatus having a collimator in which a plurality of rectangular through-holes are arranged in a grid pattern and separated by septa is rotated through a predetermined angle as viewed from above in relation to the layout of a plurality of rectangular detectors that are arranged in a grid pattern. The predetermined angle ranges from 20 to 70 degree and more preferably from 30 deg to 60 deg. With this configuration, the influence of sensitivity variations (moire patterns) that are included in an image picked up due to interference with a collimator when pixel type detectors are used is eliminated.

Abstract: Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Abstract: Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.