Abstract: A valve spring includes a nitrided layer, and a core portion that is further inward than the nitrided layer. A chemical composition of the core portion consists of, in mass %, C: 0.53 to 0.59%, Si: 2.51 to 2.90%, Mn: 0.70 to 0.85%, P: 0.020% or less, S: 0.020% or less, Cr: 1.40 to 1.70%, Mo: 0.17 to 0.53%, V: 0.23 to 0.33%, Ca: 0.0001 to 0.0050%, Cu: 0.050% or less, Ni: 0.050% or less, Al: 0.0050% or less, Ti: 0.050% or less, and N: 0.0070% or less, with the balance being Fe and impurities. In the core portion, a number density of V-based precipitates having a maximum diameter ranging from 2 to 10 nm is 500 to 8000 per ?m2, and in the core portion, a numerical proportion of Ca sulfides with respect to a total number of oxide-based inclusions and sulfide-based inclusions is 0.20% or less.

Abstract: In a plasma processing apparatus for generating a plasma in a processing space of a processing chamber and performing plasma processing on a target object, the apparatus includes an antenna configured to radiate a microwave for plasma generation into the processing chamber through a ceiling plate. The plasma processing apparatus further includes a pressing mechanism provided above the antenna and configured to press the antenna against the ceiling plate by a pressure of fluid supplied thereinto.

Abstract: In a plasma processing apparatus for generating a plasma in a processing space of a processing chamber and performing plasma processing on a target object, the apparatus includes an antenna configured to radiate a microwave for plasma generation into the processing chamber through a ceiling plate. The plasma processing apparatus further includes a pressing mechanism provided above the antenna and configured to press the antenna against the ceiling plate by a pressure of fluid suppled thereinto.

Abstract: An optical monitor device of the present microwave plasma etching device has: a monitor head located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor, more radially outward than a coaxial pipe, and above a cover plate; an optical waveguide for monitoring provided vertically below the monitor head, and longitudinally traversing the cooling plate, a dielectric plate, and a dielectric window; and a monitor main body optically connected to the monitor head via an optical fiber.

Abstract: Provided is a temperature adjusting mechanism, which can keep deviation of a temperature of a portion in contact with the temperature adjusting mechanism to be small by controlling the temperature accurately at a high speed. A semiconductor manufacturing apparatus using such temperature adjusting mechanism is also provided. A cooling jacket (6) is provided with a cooling channel (61), and a heat lane (62). The heat lane (62) is provided with a heat receiving section (63), and a heat dissipating section (64), and seals a two-phase condensable working fluid (hereinafter referred to as the working liquid) in an annular narrow tube alternately folds back and forth therebetween. The heat dissipating section (64) is a portion to be cooled by the cooling channel (61), and the heat receiving section (63) is a portion having a temperature higher than that of the heat dissipating section (64).

Abstract: [Problem] To carry out high accuracy optical monitoring of the surface of a substrate to be treated inside a treatment vessel using non-coherent monitor light having a wide wavelength range, without affecting the uniformity of the electromagnetic radiation from a planar slot antenna. [Solution] The optical monitor device 100 of the present microwave plasma etching device has: a monitor head 102 located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor 12, more radially outward than a coaxial pipe 66, and above a cover plate 72; an optical waveguide 104 for monitoring provided vertically below the monitor head 102, and longitudinally traversing the cooling plate 72, a dielectric plate 54, and a dielectric window 52; and a monitor main body optically connected to the monitor head 102 via an optical fiber 106.

Abstract: A structure of an improved processing vessel for a processing apparatus, which processes a target object using a processing gas, is disclosed. The target object, such as a semiconductor wafer, is heated within a metal cylindrical shaped processing vessel. The processing vessel includes a plurality of block bodies mutually connected by being stacked in the vertical direction. Heat insulating vacuum layers are arranged between the adjacent block bodies. Thus, heat transfer between block bodies is suppressed, so that temperature of each block body can be separately controlled, thereby improving energy efficiency.

Abstract: A transmission path of microwaves even after a temperature increases, is maintained in an appropriate state. A microwave plasma processing apparatus performs plasma processing on a substrate by exciting gas due to the electric field energy of microwaves emitted from a slot plate of a radial line slot antenna (RLSA). The microwave plasma processing apparatus includes: a processing container in which plasma processing is performed; a microwave source outputting microwaves; a rectangular waveguide transmitting the microwaves outputted from the microwave source; a coaxial converter converting a mode of the microwaves transmitted to the rectangular waveguide; a coaxial waveguide transmitting the microwaves of which the mode is converted by the coaxial converter; a taper-shaped connector attached to an inner conductor of the coaxial waveguide without contacting the slot plate; and an elastic body electrically connecting the taper-shaped connector and the slot plate.

Abstract: In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.

Abstract: A microwave plasma processing apparatus has a microwave antenna in which a wavelength-shortening plate and a cooling portion of a cooling jacket are arranged adjacent to each other.

Abstract: A microwave plasma processing apparatus performs plasma processing on a substrate by exciting a gas by electric field energy of microwaves emitted from a radial line slot antenna (RLSA). The microwave plasma processing apparatus includes: a processing container in which plasma processing is performed; a microwave source outputting microwaves; a rectangular waveguide transmitting the microwaves outputted from the microwave source; a coaxial converter converting a mode of the microwaves transmitted to the rectangular waveguide; a coaxial waveguide including an inner conductor slidably and electrically connected to the coaxial converter by a first contact member; the first contact member fixed to the coaxial converter and slidably contacting the inner conductor; and a first spring member absorbing displacement, which is caused by thermal expansion, of the RLSA and a member disposed above the RLSA.

Abstract: The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.

Abstract: Provided are a plasma processing apparatus, a plasma processing method, and a mechanism for regulating a temperature of a dielectric window, which can achieve a better plasma processing characteristic by more precisely controlling the temperature of the dielectric window through which a microwave used for plasma processing is transmitted. The plasma processing apparatus is provided with a processing container, a dielectric window (shower plate), an antenna, a waveguide, a cooling block, a substrate holder, and a holding ring (upper plate) attached to the upper portion of the processing container. A circumferential portion of the dielectric window is engaged with the holding ring. The cooling block provided with a cooling flow path through which a heat medium can flow is provided on the antenna. A temperature sensor is provided around the waveguide, and a temperature of the antenna or the like is detected. A lamp heater is provided in an inside of the holding ring.

Abstract: A microwave plasma processing apparatus has a microwave antenna in which a wavelength-shortening plate and a cooling portion of a cooling jacket are arranged adjacent to each other

Abstract: Provided is a temperature adjusting mechanism, which can keep deviation of a temperature of a portion in contact with the temperature adjusting mechanism to be small by controlling the temperature accurately at a high speed. A semiconductor manufacturing apparatus using such temperature adjusting mechanism is also provided. A cooling jacket (6) is provided with a cooling channel (61), and a heat lane (62). The heat lane (62) is provided with a heat receiving section (63), and a heat dissipating section (64), and seals a two-phase condensable working fluid (hereinafter referred to as the working liquid) in an annular narrow tube alternately folds back and forth therebetween. The heat dissipating section (64) is a portion to be cooled by the cooling channel (61), and the heat receiving section (63) is a portion having a temperature higher than that of the heat dissipating section (64).

Abstract: A shower plate (300) comprises a first flat plate (301), a second flat plate (302) and a third flat plate (303). Flow passages (303a) through which a heat medium flows are formed in the surface of the third flat plate (303) that faces the second flat plate (302). A lattice in which grids cross each other at approximately 90° is formed in the center area of the third flat plate (303), and the flow passages (303a) are bent at approximately 90° that is equal to the angle at which the grids cross each other. By bending the flow passages (303a) in such a manner, a large number of flow passages (303a) can be provided in particularly the center area heated to a high temperature, thereby satisfactorily cooling the shower plate.

Abstract: The present invention presents an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.

Abstract: An electrostatic chuck for attracting and holding a substrate by using an electrostatic force includes a plurality of protrusion portions to be brought into contact with the substrate. The protrusion portions are formed of a ceramic dielectric including grains each having a specified particle diameter, and contact surfaces of the protrusion portions with the substrate are formed to have a surface roughness depending on the particle diameter.

Abstract: A transmission path of microwaves even after a temperature increases, is maintained in an appropriate state. A microwave plasma processing apparatus performs plasma processing on a substrate by exciting gas due to the electric field energy of microwaves emitted from a slot plate of a radial line slot antenna (RLSA). The microwave plasma processing apparatus includes: a processing container in which plasma processing is performed; a microwave source outputting microwaves; a rectangular waveguide transmitting the microwaves outputted from the microwave source; a coaxial converter converting a mode of the microwaves transmitted to the rectangular waveguide; a coaxial waveguide transmitting the microwaves of which the mode is converted by the coaxial converter; a taper-shaped connector attached to an inner conductor of the coaxial waveguide without contacting the slot plate; and an elastic body electrically connecting the taper-shaped connector and the slot plate.

Abstract: A microwave plasma processing apparatus performs plasma processing on a substrate by exciting a gas by electric field energy of microwaves emitted from a radial line slot antenna (RLSA). The microwave plasma processing apparatus includes: a processing container in which plasma processing is performed; a microwave source outputting microwaves; a rectangular waveguide transmitting the microwaves outputted from the microwave source; a coaxial converter converting a mode of the microwaves transmitted to the rectangular waveguide; an inner conductor of a coaxial waveguide connected to the coaxial converter to be slidable; a first contact member joined with the coaxial converter and electrically connecting the coaxial converter and the inner conductor; and a first spring member absorbing displacement, due to thermal expansion, of the RLSA and a member disposed above the RLSA.