Abstract: A security sensor system is provided which allows the stopping of the device due to the end of a battery life to be postponed by suppressing battery power consumption, which is caused due to an object detection operation of the security sensor system, after a low battery state is detected. The security sensor system is powered by a battery. When a low battery detector detects a reduction in the voltage of the battery, an object detection operation of the security sensor system is switched from a normal mode to a suppression mode. Consumption of the battery in the suppression mode is suppressed.

Abstract: A semiconductor device includes a p-type semiconductor region in contact with a bottom face of a trench gate, wherein the p-type semiconductor region includes a first p-type semiconductor region containing a first type of p-type impurities and a second p-type semiconductor region containing a second type of p-type impurities. The first p-type semiconductor region is located between the trench gate and the second p-type semiconductor region. In a view along the depth direction, the second p-type semiconductor region is located within a part of the first p-type semiconductor region. A diffusion coefficient of the second type of p-type impurities is smaller than a diffusion coefficient of the first type of p-type impurities.

Abstract: A thermal analyzer is provided with: a furnace tube; a sample holder; a heating furnace; a measurement chamber; and a measurement unit. The heating furnace comprises a fixing section to be fixed to the furnace tube. The furnace tube is configured to be attachable to and detachable from the heating furnace and provided with an engagement portion that is configured to be engaged with the fixing section at a variable position in the radial direction. A gap jig is configured to be detachable from the heating furnace and the furnace tube after inserting the furnace tube into the heating furnace and engaging the engagement portion of the furnace tube with the fixing section while the gap jig is interposed between the heating furnace and the furnace tube to maintain the gap between the heating furnace and the furnace tube in the radial direction to be in the predetermined distance.

Abstract: A security sensor system is provided which allows the stopping of the device due to the end of a battery life to be postponed by suppressing battery power consumption, which is caused due to an object detection operation of the security sensor system, after a low battery state is detected. The security sensor system is powered by a battery. When a low battery detector detects a reduction in the voltage of the battery, an object detection operation of the security sensor system is switched from a normal mode to a suppression mode. Consumption of the battery in the suppression mode is suppressed.

Abstract: A method for manufacturing a photovoltaic device capable of suppressing decreases in an open-circuit voltage and a fill factor or suppressing the occurrence of a current leak. The method for manufacturing a photovoltaic device includes: (a) forming a pyramidal texture on a first main surface of a silicon substrate; (b) forming a first silicate glass on the first main surface; (c) forming a second silicate glass on the first silicate glass; (d) diffusing the impurities of the first conductivity type contained in the first silicate glass to the first main surface of the silicon substrate; (e) forming a third silicate glass on the second silicate glass; and (f) diffusing impurities of a second conductivity type to a second main surface of the silicon substrate after (e).

Abstract: A semiconductor device includes a p-type semiconductor region in contact with a bottom face of a trench gate, wherein the p-type semiconductor region includes a first p-type semiconductor region containing a first type of p-type impurities and a second p-type semiconductor region containing a second type of p-type impurities. The first p-type semiconductor region is located between the trench gate and the second p-type semiconductor region. In a view along the depth direction, the second p-type semiconductor region is located within a part of the first p-type semiconductor region. A diffusion coefficient of the second type of p-type impurities is smaller than a diffusion coefficient of the first type of p-type impurities.

Abstract: An imaging apparatus for a thermal analyzer is configured to image a heated sample inside a thermal analyzer main body section from an observation window provided in the thermal analyzer main body section. The imaging apparatus is provided with: an imaging device that is provided with a lens housing and a main body section; a holding section configured to hold the imaging device to have an orientation in which the lens housing is oriented toward the observation window, and the main body section is positioned on the opposite side of the observation window across the lens housing; and a cooling fan configured to provide airflow inside the holding section. The holding section is provided with a cooling air passage having an intake portion and an exhaust portion. At least a portion of the lens housing is arranged in the cooling air passage to be cooled by the airflow provided by the cooling fan.

Abstract: A semiconductor device is provided with: a first conductivity type contact region; a second conductivity type body region; a first conductivity type drift region of; a trench formed through the contact region and body region from a front surface of the semiconductor substrate, wherein a bottom of the trench is positioned in the drift region; an insulating film covering an inner surface of the trench; a gate electrode accommodated in the trench in a state covered with the insulating film; and a second conductivity type floating region formed at a position deeper than the bottom of the trench, and adjacent to the bottom of the trench. The floating region includes a first layer adjacent to the bottom of the trench and a second layer formed at a position deeper than the first layer, wherein a width of the first layer is broader than a width of the second layer.

Abstract: A fused heterocyclic compound is provided represented by the following formula (1) or an N-oxide thereof, wherein A1 represents NR5, oxygen or sulfur, A2 and A3 represent a nitrogen atom or the like, R1 represents a C1 to C6 chain hydrocarbon group or the like, R2 represents a C1 to C6 chain hydrocarbon group or the like, R3 and R4 are the same or different and represent a C1 to C6 chain hydrocarbon group or the like, n represents 0, 1 or 2, and G represents any of the following formulae, wherein Q represents an oxygen or sulfur atom, p represents 0 or 1, and R10 to R24 are the same or different and represent a C1 to C6 chain hydrocarbon group or the like. The compound has an excellent control effect on pests.

Abstract: A high-strength brass alloy for sliding members, consists of, by mass %, 17 to 28% of Zn, 5 to 10% of Al, 4 to 10% of Mn, 1 to 5% of Fe, 0.1 to 3% of Ni, 0.5 to 3% of Si, and the balance of Cu and inevitable impurities. The high-strength brass alloy has a structure that includes a matrix of a single phase structure of the ? phase and includes at least one of Fe—Mn—Si intermetallic compounds in the form of aciculae, spheres, or petals dispersed in the ? phase.

Abstract: A semiconductor device is provided with: a first conductivity type contact region; a second conductivity type body region; a first conductivity type drift region of; a trench formed through the contact region and body region from a front surface of the semiconductor substrate, wherein a bottom of the trench is positioned in the drift region; an insulating film covering an inner surface of the trench; a gate electrode accommodated in the trench in a state covered with the insulating film; and a second conductivity type floating region formed at a position deeper than the bottom of the trench, and adjacent to the bottom of the trench. The floating region includes a first layer adjacent to the bottom of the trench and a second layer formed at a position deeper than the first layer, wherein a width of the first layer is broader than a width of the second layer.

Abstract: A thermal analyzer is provided with: a furnace tube; a sample holder; a heating furnace; a measurement chamber; and a measurement unit. The heating furnace comprises a fixing section to be fixed to the furnace tube. The furnace tube is configured to be attachable to and detachable from the heating furnace and provided with an engagement portion that is configured to be engaged with the fixing section at a variable position in the radial direction. A is configured to be detachable from the heating furnace and the furnace tube after inserting the furnace tube into the heating furnace and engaging the engagement portion of the furnace tube with the fixing section while the gap jig is interposed between the heating furnace and the furnace tube to maintain the gap between the heating furnace and the furnace tube in the radial direction to be in the predetermined distance.

Abstract: An imaging apparatus for a thermal analyzer is configured to image a heated sample inside a thermal analyzer main body section from an observation window provided in the thermal analyzer main body section. The imaging apparatus is provided with: an imaging device that is provided with a lens housing and a main body section; a holding section configured to hold the imaging device to have an orientation in which the lens housing is oriented toward the observation window, and the main body section is positioned on the opposite side of the observation window across the lens housing; and a cooling fan configured to provide airflow inside the holding section. The holding section is provided with a cooling air passage having an intake portion and an exhaust portion. At least a portion of the lens housing is arranged in the cooling air passage to be cooled by the airflow provided by the cooling fan.

Abstract: A security sensor system is provided which allows the stopping of the device due to the end of a battery life to be postponed by suppressing battery power consumption, which is caused due to an object detection operation of the security sensor system, after a low battery state is detected. The security sensor system is powered by a battery. When a low battery detector detects a reduction in the voltage of the battery, an object detection operation of the security sensor system is switched from a normal mode to a suppression mode. Consumption of the battery in the suppression mode is suppressed.

Abstract: Provided are a battery type determination device with a simple configuration capable of easily and reliably determining the types of a plurality of batteries irrespective of shapes and characteristics of the batteries, and a battery-driven electronic device that includes the battery type determination device and allows usage of plural types of batteries. The battery type determination device is used in a battery-driven electronic device operable with plural types of batteries having different shapes and characteristics, and includes a determination signal generator for generating a determination signal that is allocated for each of the plural types of batteries without depending on shapes and characteristics of the batteries and is formed by combination of binary signals prescribed for each type of battery; and a determination controller for determining the type of each battery based on the generated determination signal.

Abstract: A mast assembly for a forklift truck includes a plurality of guide units. At least one of the guide units includes a sliding pad member made of a plastic material and having a block-shaped body, which is hollow, is open at its base side, and has a rectangular ring-shaped cross section. The sliding pad member has a rectangular, plain, front wall provided at the side of the block-shaped body opposite to the base side thereof. The front wall has a sliding contact surface. Reinforcement ribs are formed on the inner surface of the front wall. Grooves are formed in the sliding contact surface, extending along the respective ones of the reinforcement ribs and helping avoid formation of shrinkage depressions in the sliding contact surface. The block-shaped body includes first and second pairs of opposing side walls. Tabs are formed on the first pair of opposing side walls.

Abstract: Provided is a reverse connection preventing structure in a battery-driven object detection device, which has a simple structure capable of preventing reverse connection of even a battery whose projecting positive electrode is relatively lower in height. The structure has a holder for holding the battery including a first terminal for electrically connecting to a projecting positive electrode and a second terminal for electrically connecting to a negative electrode. The first terminal is formed in a printed circuit board. On the printed circuit board, an insulating member of less than 0.5 mm in thickness are provided around the circumference of the first terminal in such a manner as to allow the first terminal to come in contact with the positive electrode of the battery which is mounted correctly and as to prevent the first terminal from coming in contact with the negative electrode of the battery which is mounted reversely.

Abstract: A thermal analyzer is provided with: a furnace tube; a pair of sample holders; a heating furnace; a measurement chamber; and a measurement unit arranged inside the measurement chamber. The sample holders are arranged inside the furnace tube and are provided with mounting faces on which a pair of sample containers are mounted respectively. The heating furnace has an opening through which a measurement sample is observable, the opening being located at a position above the center of a virtual segment which connects centers of gravity of the mounting faces of the sample holders. The opening is formed to have a size, as viewed in a direction perpendicular to the axial direction and the mounting faces, of 7 mm or more in the direction along the virtual segment and of 3 mm or more in the direction perpendicular to the virtual segment.

Abstract: A thermal analyzer (100) includes: a furnace tube (9) made of a transparent material; a heating furnace (3); a sample holding part (41, 42) arranged inside the furnace tube; a first support base (12); a second support base (14); a measurement chamber (30) connected to the furnace tube; a first movement part (22) for moving the first support base and the second support base between a measurement position, at which the furnace tube is connected to the measurement chamber, and a sample setting position, at which the sample holding part is exposed on a rear end side with respect to the furnace tube and the heating furnace; and a second movement part (24) for moving only the second support base to a sample observation position, at which the heating furnace is advanced and the furnace tube is exposed. Accordingly, the sample is observable from outside the exposed furnace tube.

Abstract: A thermal analyzer heats and cools a sample placed inside a furnace for measuring a thermal characteristic of the sample during heating and cooling. The thermal analyzer has a multilayer structure for covering the furnace and its surroundings so as to isolate the furnace and its surroundings from an external environment. The multilayer structure includes a multilayer wall with two layers formed of a material having high thermal conductivity and heat dissipation property. The two layers are spaced apart from one another to provide therebetween an interlayer that contains a substance having a heat capacity substantially equal to a gas contained in the furnace so that heat transfer between the two layers is minimized.