Patents by Inventor Shinya Nishimura

Shinya Nishimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180335083
    Abstract: A sliding contact surface-forming material, and method of making the material are disclosed, the material having minimal swelling and excellent friction-proof and wear-proof characteristics when used in moist environments such as in water, and improved in the friction-proof and wear-proof characteristics under dry friction conditions such as in the open air, particularly under oscillation conditions for testing journal. The material includes a reinforcing base impregnated with a resol-type phenolic resin having polytetrafluoroethylene resin dispersed therein. The reinforcing base is composed of a woven fabric formed by using, as each of the warp and the weft, a ply yarn which is formed by paralleling at least two strands of a single twist yarn spun from fluorine-containing resin fiber and a single twist yarn spun from polyester fiber, and by twisting them in the direction opposite to the direction in which the single twist yarns were spun.
    Type: Application
    Filed: July 31, 2018
    Publication date: November 22, 2018
    Inventors: Hiroyuki OGOE, Shinya NISHIMURA, Kentaro OKUBO
  • Publication number: 20180335081
    Abstract: A sliding contact surface-forming material with improved friction-proof and wear-proof characteristics under dry friction conditions such as in the open air, while keeping the low swelling, friction-proof, and wear-proof characteristics under moist atmosphere typically under water unchanged, wherein the sliding contact surface-forming material includes a reinforcing base impregnated with a resol-type phenolic resin having polytetrafluoroethylene resin dispersed therein, the reinforcing base being composed of a woven fabric formed by using, respectively as the warp and the weft, a ply yarn which is formed by paralleling at least two strands of a single twist yarn spun from fluorine-containing resin fiber and a single twist yarn spun from polyphenylene sulfide fiber, and by twisting them in the direction opposite to the direction in which the single twist yarns were spun.
    Type: Application
    Filed: July 31, 2018
    Publication date: November 22, 2018
    Inventors: Hiroyuki OGOE, Shinya NISHIMURA, Kentaro OKUBO
  • Patent number: 10088402
    Abstract: A thermal analyzer is provided with: a furnace tube; a pair of sample holders; a heating furnace; a measurement chamber; and a measurement unit arranged inside the measurement chamber. The sample holders are arranged inside the furnace tube and are provided with mounting faces on which a pair of sample containers are mounted respectively. The heating furnace has an opening through which a measurement sample is observable, the opening being located at a position above the center of a virtual segment which connects centers of gravity of the mounting faces of the sample holders. The opening is formed to have a size, as viewed in a direction perpendicular to the axial direction and the mounting faces, of 7 mm or more in the direction along the virtual segment and of 3 mm or more in the direction perpendicular to the virtual segment.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: October 2, 2018
    Assignee: Hitachi High-Tech Science Corporation
    Inventors: Shinya Nishimura, Kentaro Yamada, Kanji Nagasawa, Ryoji Takasawa
  • Patent number: 9922543
    Abstract: A security sensor system is provided which allows the stopping of the device due to the end of a battery life to be postponed by suppressing battery power consumption, which is caused due to an object detection operation of the security sensor system, after a low battery state is detected. The security sensor system is powered by a battery. When a low battery detector detects a reduction in the voltage of the battery, an object detection operation of the security sensor system is switched from a normal mode to a suppression mode. Consumption of the battery in the suppression mode is suppressed.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: March 20, 2018
    Assignee: OPTEX CO., LTD.
    Inventors: Takao Ujike, Katsutoshi Tatsuoka, Hiroshi Makino, Mitsugu Mihara, Shinya Nishimura
  • Patent number: 9920050
    Abstract: A fused heterocyclic compound is provided represented by the following formula (1) or an N-oxide thereof, wherein A1 represents NR5, oxygen or sulfur, A2 and A3 represent a nitrogen atom or the like, R1 represents a C1 to C6 chain hydrocarbon group or the like, R2 represents a C1 to C6 chain hydrocarbon group or the like, R3 and R4 are the same or different and represent a C1 to C6 chain hydrocarbon group or the like, n represents 0, 1 or 2, and G represents any of the following formulae, wherein Q represents an oxygen or sulfur atom, p represents 0 or 1, and R10 to R24 are the same or different and represent a C1 to C6 chain hydrocarbon group or the like. The compound has an excellent control effect on pests.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: March 20, 2018
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Takamasa Tanabe, Hajime Mizuno, Ayaka Tanaka, Shinya Nishimura, Yoshihiko Nokura
  • Patent number: 9899469
    Abstract: A semiconductor device includes a p-type semiconductor region in contact with a bottom face of a trench gate, wherein the p-type semiconductor region includes a first p-type semiconductor region containing a first type of p-type impurities and a second p-type semiconductor region containing a second type of p-type impurities. The first p-type semiconductor region is located between the trench gate and the second p-type semiconductor region. In a view along the depth direction, the second p-type semiconductor region is located within a part of the first p-type semiconductor region. A diffusion coefficient of the second type of p-type impurities is smaller than a diffusion coefficient of the first type of p-type impurities.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: February 20, 2018
    Assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation
    Inventors: Shinya Nishimura, Hirokazu Fujiwara, Narumasa Soejima, Yuichi Takeuchi
  • Patent number: 9885645
    Abstract: A thermal analyzer is provided with: a furnace tube; a sample holder; a heating furnace; a measurement chamber; and a measurement unit. The heating furnace comprises a fixing section to be fixed to the furnace tube. The furnace tube is configured to be attachable to and detachable from the heating furnace and provided with an engagement portion that is configured to be engaged with the fixing section at a variable position in the radial direction. A gap jig is configured to be detachable from the heating furnace and the furnace tube after inserting the furnace tube into the heating furnace and engaging the engagement portion of the furnace tube with the fixing section while the gap jig is interposed between the heating furnace and the furnace tube to maintain the gap between the heating furnace and the furnace tube in the radial direction to be in the predetermined distance.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: February 6, 2018
    Assignee: Hitachi High-Tech Science Corporation
    Inventors: Shinya Nishimura, Hirohito Fujiwara
  • Patent number: 9870699
    Abstract: A security sensor system is provided which allows the stopping of the device due to the end of a battery life to be postponed by suppressing battery power consumption, which is caused due to an object detection operation of the security sensor system, after a low battery state is detected. The security sensor system is powered by a battery. When a low battery detector detects a reduction in the voltage of the battery, an object detection operation of the security sensor system is switched from a normal mode to a suppression mode. Consumption of the battery in the suppression mode is suppressed.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: January 16, 2018
    Assignee: OPTEX CO., LTD.
    Inventors: Takao Ujike, Katsutoshi Tatsuoka, Hiroshi Makino, Mitsugu Mihara, Shinya Nishimura
  • Publication number: 20170330990
    Abstract: A method for manufacturing a photovoltaic device capable of suppressing decreases in an open-circuit voltage and a fill factor or suppressing the occurrence of a current leak. The method for manufacturing a photovoltaic device includes: (a) forming a pyramidal texture on a first main surface of a silicon substrate; (b) forming a first silicate glass on the first main surface; (c) forming a second silicate glass on the first silicate glass; (d) diffusing the impurities of the first conductivity type contained in the first silicate glass to the first main surface of the silicon substrate; (e) forming a third silicate glass on the second silicate glass; and (f) diffusing impurities of a second conductivity type to a second main surface of the silicon substrate after (e).
    Type: Application
    Filed: May 11, 2015
    Publication date: November 16, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventors: Takehiko SATO, Kunihiko NISHIMURA, Shinya NISHIMURA, Tatsuro WATAHIKI
  • Publication number: 20170317162
    Abstract: A semiconductor device includes a p-type semiconductor region in contact with a bottom face of a trench gate, wherein the p-type semiconductor region includes a first p-type semiconductor region containing a first type of p-type impurities and a second p-type semiconductor region containing a second type of p-type impurities. The first p-type semiconductor region is located between the trench gate and the second p-type semiconductor region. In a view along the depth direction, the second p-type semiconductor region is located within a part of the first p-type semiconductor region. A diffusion coefficient of the second type of p-type impurities is smaller than a diffusion coefficient of the first type of p-type impurities.
    Type: Application
    Filed: December 11, 2015
    Publication date: November 2, 2017
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Shinya NISHIMURA, Hirokazu FUJIWARA, Narumasa SOEJIMA, Yuichi TAKEUCHI
  • Patent number: 9753509
    Abstract: An imaging apparatus for a thermal analyzer is configured to image a heated sample inside a thermal analyzer main body section from an observation window provided in the thermal analyzer main body section. The imaging apparatus is provided with: an imaging device that is provided with a lens housing and a main body section; a holding section configured to hold the imaging device to have an orientation in which the lens housing is oriented toward the observation window, and the main body section is positioned on the opposite side of the observation window across the lens housing; and a cooling fan configured to provide airflow inside the holding section. The holding section is provided with a cooling air passage having an intake portion and an exhaust portion. At least a portion of the lens housing is arranged in the cooling air passage to be cooled by the airflow provided by the cooling fan.
    Type: Grant
    Filed: January 27, 2015
    Date of Patent: September 5, 2017
    Assignee: Hitachi High-Tech Science Corporation
    Inventors: Shinya Nishimura, Hirohito Fujiwara, Kentaro Yamada
  • Patent number: 9640655
    Abstract: A semiconductor device is provided with: a first conductivity type contact region; a second conductivity type body region; a first conductivity type drift region of; a trench formed through the contact region and body region from a front surface of the semiconductor substrate, wherein a bottom of the trench is positioned in the drift region; an insulating film covering an inner surface of the trench; a gate electrode accommodated in the trench in a state covered with the insulating film; and a second conductivity type floating region formed at a position deeper than the bottom of the trench, and adjacent to the bottom of the trench. The floating region includes a first layer adjacent to the bottom of the trench and a second layer formed at a position deeper than the first layer, wherein a width of the first layer is broader than a width of the second layer.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: May 2, 2017
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Shinya Nishimura, Narumasa Soejima, Kensaku Yamamoto
  • Publication number: 20160368915
    Abstract: A fused heterocyclic compound is provided represented by the following formula (1) or an N-oxide thereof, wherein A1 represents NR5, oxygen or sulfur, A2 and A3 represent a nitrogen atom or the like, R1 represents a C1 to C6 chain hydrocarbon group or the like, R2 represents a C1 to C6 chain hydrocarbon group or the like, R3 and R4 are the same or different and represent a C1 to C6 chain hydrocarbon group or the like, n represents 0, 1 or 2, and G represents any of the following formulae, wherein Q represents an oxygen or sulfur atom, p represents 0 or 1, and R10 to R24 are the same or different and represent a C1 to C6 chain hydrocarbon group or the like. The compound has an excellent control effect on pests.
    Type: Application
    Filed: June 25, 2014
    Publication date: December 22, 2016
    Inventors: Takamasa TANABE, Hajime MIZUNO, Ayaka TANAKA, Shinya NISHIMURA, Yoshihiko NOKURA
  • Patent number: 9322085
    Abstract: A high-strength brass alloy for sliding members, consists of, by mass %, 17 to 28% of Zn, 5 to 10% of Al, 4 to 10% of Mn, 1 to 5% of Fe, 0.1 to 3% of Ni, 0.5 to 3% of Si, and the balance of Cu and inevitable impurities. The high-strength brass alloy has a structure that includes a matrix of a single phase structure of the ? phase and includes at least one of Fe—Mn—Si intermetallic compounds in the form of aciculae, spheres, or petals dispersed in the ? phase.
    Type: Grant
    Filed: January 6, 2010
    Date of Patent: April 26, 2016
    Assignee: OILES CORPORATION
    Inventors: Shinya Nishimura, Tomoyuki Yamane, Takeshi Kondo
  • Publication number: 20160005861
    Abstract: A semiconductor device is provided with: a first conductivity type contact region; a second conductivity type body region; a first conductivity type drift region of; a trench formed through the contact region and body region from a front surface of the semiconductor substrate, wherein a bottom of the trench is positioned in the drift region; an insulating film covering an inner surface of the trench; a gate electrode accommodated in the trench in a state covered with the insulating film; and a second conductivity type floating region formed at a position deeper than the bottom of the trench, and adjacent to the bottom of the trench. The floating region includes a first layer adjacent to the bottom of the trench and a second layer formed at a position deeper than the first layer, wherein a width of the first layer is broader than a width of the second layer.
    Type: Application
    Filed: January 24, 2013
    Publication date: January 7, 2016
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Shinya NISHIMURA, Narumasa SOEJIMA, Kensaku YAMAMOTO
  • Publication number: 20150264277
    Abstract: An imaging apparatus for a thermal analyzer is configured to image a heated sample inside a thermal analyzer main body section from an observation window provided in the thermal analyzer main body section. The imaging apparatus is provided with: an imaging device that is provided with a lens housing and a main body section; a holding section configured to hold the imaging device to have an orientation in which the lens housing is oriented toward the observation window, and the main body section is positioned on the opposite side of the observation window across the lens housing; and a cooling fan configured to provide airflow inside the holding section. The holding section is provided with a cooling air passage having an intake portion and an exhaust portion. At least a portion of the lens housing is arranged in the cooling air passage to be cooled by the airflow provided by the cooling fan.
    Type: Application
    Filed: January 27, 2015
    Publication date: September 17, 2015
    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Shinya Nishimura, Hirohito Fujiwara, Kentaro Yamada
  • Publication number: 20150260665
    Abstract: A thermal analyzer is provided with: a furnace tube; a sample holder; a heating furnace; a measurement chamber; and a measurement unit. The heating furnace comprises a fixing section to be fixed to the furnace tube. The furnace tube is configured to be attachable to and detachable from the heating furnace and provided with an engagement portion that is configured to be engaged with the fixing section at a variable position in the radial direction. A is configured to be detachable from the heating furnace and the furnace tube after inserting the furnace tube into the heating furnace and engaging the engagement portion of the furnace tube with the fixing section while the gap jig is interposed between the heating furnace and the furnace tube to maintain the gap between the heating furnace and the furnace tube in the radial direction to be in the predetermined distance.
    Type: Application
    Filed: March 13, 2015
    Publication date: September 17, 2015
    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Shinya Nishimura, Hirohito Fujiwara
  • Publication number: 20150187195
    Abstract: A security sensor system is provided which allows the stopping of the device due to the end of a battery life to be postponed by suppressing battery power consumption, which is caused due to an object detection operation of the security sensor system, after a low battery state is detected. The security sensor system is powered by a battery. When a low battery detector detects a reduction in the voltage of the battery, an object detection operation of the security sensor system is switched from a normal mode to a suppression mode. Consumption of the battery in the suppression mode is suppressed.
    Type: Application
    Filed: December 24, 2014
    Publication date: July 2, 2015
    Applicant: OPTEX CO., LTD.
    Inventors: Takao UJIKE, Katsutoshi TATSUOKA, Hiroshi MAKINO, Mitsugu MIHARA, Shinya NISHIMURA
  • Publication number: 20150180258
    Abstract: Provided are a battery type determination device with a simple configuration capable of easily and reliably determining the types of a plurality of batteries irrespective of shapes and characteristics of the batteries, and a battery-driven electronic device that includes the battery type determination device and allows usage of plural types of batteries. The battery type determination device is used in a battery-driven electronic device operable with plural types of batteries having different shapes and characteristics, and includes a determination signal generator for generating a determination signal that is allocated for each of the plural types of batteries without depending on shapes and characteristics of the batteries and is formed by combination of binary signals prescribed for each type of battery; and a determination controller for determining the type of each battery based on the generated determination signal.
    Type: Application
    Filed: December 19, 2014
    Publication date: June 25, 2015
    Applicant: OPTEX CO., LTD.
    Inventors: Takao UJIKE, Shinya NISHIMURA, Hiroshi MAKINO, Chihiro MORITA
  • Patent number: D836013
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: December 18, 2018
    Assignee: OPTEX CO., LTD.
    Inventors: Shun Onishi, Chihiro Morita, Hiroyuki Ikeda, Michinori Noguchi, Shinya Nishimura, Hirofumi Shimada, Takashi Kondo, Takeo Hyodo, Yu Kawashima