Patents by Inventor Shinya Numadu

Shinya Numadu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9571772
    Abstract: A solid-state imaging device includes a pixel and a floating diffusion. The pixel includes a photoelectric conversion element that converts incident light into and electric charge, a first transfer gate that includes a plurality of electrodes and transfers the electric charge from the photoelectric conversion element, a charge holding region that holds the electric charge transferred from the photoelectric conversion element by the first transfer gate, each of the plurality of electrodes of the first transfer gate corresponding to a sub-region of the charge holding region, and a second transfer gate that transfers the electric charge from the charge holding region. The floating diffusion region holds the electric charge transferred from the charge holding region by the second transfer gate.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: February 14, 2017
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Hiroki Hagiwara, Takahiro Toya, Shinya Numadu
  • Publication number: 20150028189
    Abstract: A solid-state imaging device includes a pixel and a floating diffusion. The pixel includes a photoelectric conversion element that converts incident light into and electric charge, a first transfer gate that includes a plurality of electrodes and transfers the electric charge from the photoelectric conversion element, a charge holding region that holds the electric charge transferred from the photoelectric conversion element by the first transfer gate, each of the plurality of electrodes of the first transfer gate corresponding to a sub-region of the charge holding region, and a second transfer gate that transfers the electric charge from the charge holding region. The floating diffusion region holds the electric charge transferred from the charge holding region by the second transfer gate.
    Type: Application
    Filed: July 16, 2014
    Publication date: January 29, 2015
    Inventors: Hiroki Hagiwara, Takahiro Toya, Shinya Numadu