Patents by Inventor Shinya Ogane

Shinya Ogane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, semiconductor wafer and manufacturing method of the same
    Patent number: 8378459
    Abstract: In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: February 19, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Yasuhiro Naka, Naotaka Tanaka, Toshihide Uematsu, Chuichi Miyazaki, Kazunari Suzuki, Yasuyuki Nakajima, Yoshiyuki Abe, Kenji Kohzu, Kosuke Kitaichi, Shinya Ogane
  • SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER AND MANUFACTURING METHOD OF THE SAME
    Publication number: 20100308442
    Abstract: In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.
    Type: Application
    Filed: June 8, 2010
    Publication date: December 9, 2010
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Yasuhiro NAKA, Naotaka TANAKA, Toshihide UEMATSU, Chuichi MIYAZAKI, Kazunari SUZUKI, Yasuyuki NAKAJIMA, Yoshiyuki ABE, Kenji KOHZU, Kosuke KITAICHI, Shinya OGANE